FOS improvement through the growth speed increase of A-Si layer in TFT process

As time goes by, the market demand increases and each LCD panel manufacturing company makes every effort to produce more panels in a limited time. It is necessary to reduce the cost and time of production for the improvement of productivity in manufacturing companies. The increased speed of thin films growth used in the TFT process brings improvement of productivity but it is also accompanied by a drop in display quality due to a characteristic change of the thin film. So in our dissertation, we deal with the increased speed of a-Si layer growth and the proportioned a drop in characteristic quality. We discuss a drop in display quality by a characteristic change of a-Si layer and we propose a counter-plan through panel design improvement. We have already applied our plan to the 15" XGA panel and confirmed the improved result.