Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effects of Photon Energy Spectrum on the Photocurrent of Hydrogenated Amorphous Silicon Thin Film Transistor by Using Frequency Filters

  • Cho, Eou Sik (Department of Electronics Engineering, Gachon University) ;
  • Kwon, Sang Jik (Department of Electronics Engineering, Gachon University)
  • Received : 2012.11.12
  • Accepted : 2012.11.19
  • Published : 2013.02.25
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Abstract

Frequency filters with various filtering wavelengths were used in the photoelectric characterization of hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) and the experimental results were described and analyzed in terms of the photon energy spectral characteristics calculated from the integration of the photon energy and the spectral intensity of transmitted backlight through the filters at each wavelength. From the comparison of the photocurrents and the calculated photon energy spectrums for the filtered ranges of wavelength, it was possible to conclude that the photocurrents are closely related to the photon energy spectrums of the backlight.

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References

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