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http://dx.doi.org/10.4313/JKEM.2008.21.9.844

A Study on the Effects of the Optical Characteristics of Backlight Sources on the Photo Leakage Currents of a-Si:H Thin Film Transistor  

Im, Seung-Hyeok (경원대학교 전자공학과)
Kwon, Sang-Jik (경원대학교 전자공학과)
Cho, Eou-Sik (경원대학교 전자공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.21, no.9, 2008 , pp. 844-847 More about this Journal
Abstract
The photo leakage currents of a conventional hydrogenated amorphous silicon(a-Si:H) thin film transistor(TFT) were investigated and analyzed in case of illumination from various light sources such as halogen lamp, cold cathode fluorescent lamp(CCFL) backlight, and white light emitting diode(LED) backlight. The photo leakage characteristics showed the apparent differences in the leakage level and in the $I_{on}/I_{off}$ ratio in spite of the similar luminances of light sources. This leakage level is expected to be related to the wavelength of the lowest intensity peak from the spectral characteristics of light sources.
Keywords
Backlight system; Photo leakage current; Spectral characteristics;
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