• 한국전기전자재료학회논문지
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• 제30권5호
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• pp.307-311
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• 2017

ZnO:Al thin films were deposited on glass substrate by RF magnetron sputtering followed by in situ heat treatment in the same chamber. Effects of in situ heat treatment on properties of ZnO:Al thin films were investigated in this study. As heat treatment temperature was increased, crystal quality was improved first and then it was deteriorated, surface roughness was decreased, and sheet resistance was also decreased. The decrease in sheet resistance was caused by increasing carrier concentration due to decreased surface roughness. The decrease in surface roughness resulted in increase of transmittance. Therefore, in situ heat treatment is an effective method for obtaining films with better electrical characteristics.

• 전기학회논문지
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• 제66권8호
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• pp.1236-1241
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• 2017

We deposited Al-doped ZnO (ZnO:Al) thin films on glass substrates ($200mm{\times}200mm$) by using in-line magnetron sputtering system. Effects of various deposition parameters such as working pressure, deposition power and substrate temperature on optoelectronic characteristics including surface-texture etching profiles were carefully investigated in this study. We found that relatively low working pressure and high deposition power offered to obtain enhanced conductivity and optical transmittance. Haze properties showed similar trend with the transmittance. Furthermore, surface-texture etching study exhibited good morphologies when the films were deposited at $200-300^{\circ}C$. On the basis of these optimizations, we could find the deposition region that produces highly transparent and conductive properties including efficient light scattering capability.

• Current Photovoltaic Research
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• 제5권1호
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• pp.28-32
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• 2017

In this paper, (Ga,Al):ZnO layers were deposited by sputtering to evaluate the device performance according to the thickness of the layer. As the thickness increased, low transmittance was observed, but the electrical resistance was improved. On the other hand, the highest efficiency was recorded at 400 nm device than a 500 nm of it. Therefore, since the critical thickness exists, it is necessary to set an adequate TCO layer thickness in consideration of the characteristics of the underlying film and the device.

• Journal of Information Display
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• 제10권1호
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• pp.24-27
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• 2009

A simple nonalkoxide sol-gel route for depositing an Al-doped ZnO thin film on a glass substrate was derived in this study. The initial Al dopant concentration in the sol-gel preparation varied and ranged from 0 to 5%. The sol-gel-derived thin films showed c-plane preferred crystallization of their hexagonal phase, with nanosized grain structures. First and second post-heat-treatments were carried out to improve the film’s electrical resistivity. The carrier density and the Hall mobility were measured and discussed to explain the electrical resistivity. The optical transmittance within the visible range showed compatible properties, which indicates the possible use of A1-doped ZnO as a transparent electrode in flat panel displays.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.98-101
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• 2004

AZO(ZnO:Al) thin film were prepared by FTS(Facing Target Sputtering) system. Change the sputtering conditions, AZO thin film deposited the lower resistivity(<$10-4{\Omega}cm$) so it can use to be a display application electrode. In this study, the electrical and crystallographic effects of target type have been investigated. The crystal structure was studied by XRD and the resistivity of AZO thin film was obtained by the four-point probe.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.133-134
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• 2007

We have studied the structural and electrical, optical properties of Al doped ZnO(AW) thin films which were fabricated by If reactive magnetron sputtering method with various heat treatment conditions. The heat temperatures of specimen fabrication were comning 7059 glass is $200{\sim}500^{\circ}C$ and Polyimide films are $200{\sim}350^{\circ}C$ respectively. The variations of the electrical and optical properties with heat treatment temperature and ambient were studied.

• 한국수소및신에너지학회논문집
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• 제30권2호
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• pp.95-102
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• 2019

In order to investigate the effect of water treatment on activity of WGS catalyst, $Cu/ZnO/MgO/Al_2O_3$ (CZMA) catalysts were synthesized by co-precipitation method. The prepared catalysts were water-treated at two different temperature (250, $350^{\circ}C$). Synthesized catalysts were characterized by using BET, SEM, $N_2O$ chemisorption, XRD, $H_2-TPR$ and XPS analysis. The catalytic activity tests were carried out at a GHSV of $28,000h^{-1}$ and a temperature range of $180-320^{\circ}C$. The reduction temperature decreased with water treatment and CZMA_250 catalyst showed the lowest reduction temperature and retained a large amount of $Cu^+$. Water-treated catalysts showed increased reactivity compared to untreated catalyst and the CZMA_250 catalyst showed higher catalytic activity on WGS reaction.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.413-416
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• 2004

In this study, zinc oxide(ZnO) having large misfit(18.2%) with sapphire was tried to be grown on very thin nitride buffer layers. For the creation of various kinds of nitride buffer layer, sapphire surface was modified by an irradiation of nitrogen ion beam with low energy generated from stationary plasma thruster(SPT) at room temperature. After the irradiation of ion beam, Al-N and Al-O-N bonding was identified to be formed as nitride buffet layers. Surface morphology was measured by AFM and then ZnO growth was followed by pulsed laser deposition(PLD). Their properties are analyzed by XRD, AFM, TEM, and PL. We observed that surface morphology was improved and deep level emission related to defects was almost vanished in PL spectra from the ZnO grown on nitride buffer layer.

• 한국전기전자재료학회논문지
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• 제28권5호
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• pp.291-294
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• 2015

Recently, ZnO based oxide TFTs used in the flexible and transparent display devices are widely studied. To apply to OLED display switching devices, electrical performance and stability are important issues. In this study, to improve these electrical properties, we fabricated TFTs having Al doped Zinc Oxide (AZO) layer inserted between the gate insulator and ZnO layer. The AZO and ZnO layers are deposited by Atomic layer deposition (ALD) method. I-V transfer characteristics and stability of the suggested devices are investigated under the positive gate bias condition while the channel defects are also analyzed by the photoluminescence spectrum. The TFTs with AZO layer show lower threshold voltage ($V_{th}$) and superior sub-threshold slop. In the case of $V_{th}$ shift after positive gate bias stress, the stability is also better than that of ZnO channel TFTs. This improvement is thought to be caused by the reduced defect density in AZO/ZnO stack devices, which can be confirmed by the photoluminescence spectrum analysis results where the defect related deep level emission of AZO is lower than that of ZnO layer.

• 한국전기화학회:학술대회논문집
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• 한국전기화학회 2004년도 수소연료전지공동심포지움 2004논문집
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• pp.293-296
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• 2004

고용량 $LiNi_{1-y}M_yO_2$(M=Al, Zn and Ti, y=0.000, 0.005, 0.010, 0.025, 0.050 and 0.100) 양극재료를 합성하기 위하여 연소법을 사용하였다. 합성한 시료들을 X-선회절 분석, 미세구조관찰, 전자침미세분석(EPMA)을 하였다. battery 충${\cdot}$방전기를 사용하여 리튬의 삽입${\cdot}$추출 반응으로 인하여 나타나는 충${\cdot}$방전 곡선의 변화를 조사하였고, 합성한 각 시편에 대해 충${\cdot}$방전 싸이클 수에 따른 방전용량의 변화를 조사하였다. XRD pattern 분석결과 모든 조성에서 $R\bar{3}m$ 구조를 보여주었다. Ni 자리에 Al, Zn, Ti를 치환한 결과 방전용량은 감소하였으나 M=Al 시료는 싸이클 특성이 증가하였다.