• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.74-74
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• 2011

최근 새로운 형태의 디스플레이에 관한 관심이 집중되고 있다. 이들 중 특히 투명 산화물 반도체는 기존의 실리콘 기반의 반도체에 비해 가시광 영역에서 높은 투과도를 보이며, 또한 기존의 비정질 실리콘 소자에 비해서 10 cm2/Vs이상의 높은 전하 이동도 값을 가진다. 본 연구에서는 투명 산화물 반도체 소재 중 InGaZnO4를 사용하여 펄스 레이저 방법으로 Al2O3 (0001)기판 위에 비정질 상태인 a-InGaZnO4 박막을 성장 시켰다. 박막의 증착 온도를 변화(RT, $50^{\circ}C$, $150^{\circ}C$, $250^{\circ}C$, $450^{\circ}C$, $550^{\circ}C$)시켜 성장된 박막의 구조적, 화학적, 전기적 그리고 광학적 특성을 조사하였다. 증착 온도가 $450{\sim}550^{\circ}C$ 사이에서 박막의 상태가 비정질(amorphous)에서 polycrystalline으로 성장되는 것을 X-Ray Diffraction과 Field Emission-Scanning Electron Microscope를 이용하여 확인하였고 이는 InGaZnO4 박막의 결정화 온도가 $450^{\circ}C$ 이상임을 알 수 있었다. X-ray Photoelectron Spectroscopy를 통해서 target 물질과 성장된 박막의 조성 및 화학적 상태를 고찰한 결과, 박막의 결정성 변화가 화학적 상태 변화와는 무관하다는 사실을 알 수 있었다. 온도 의존 비저항 측정을 통해 박막이 반도체 성향을 가지는 것을 확인 하였다. 또한 Hall 측정 결과 증착 온도가 올라 갈수록 전하 밀도는 증가 하지만, 전하 이동도는 다결정 박막($550^{\circ}C$)에서 급격히 감소하고, 이로 인해 비저항 값이 크게 증가함을 알 수 있었다. 이는 다결정 박막 내 존재하는 grain boundary들이 이동도 값에 영향을 준다는 것으로 추측할 수 있다. Ultra violet-Visible-Near Infrared 측정을 통해 가시광 영역에서 80%이상의 투과율을 나타내며 증착 온도가 증가함에 따라 에너지 밴드갭(Eg)이 커지는 것을 확인 할 수 있는데 이는 Hall 측정 결과에서 확인한 전하 밀도의 증가로 인해 에너지 밴드갭이 커지는 Burstein-Moss 효과로 설명할 수 있다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.63-66
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• 2003

To diffuse Zn at solid-state, the $SiO-2$/ZnO/$SiO_2$ wafers was made by PECVD and RF Sputter. Thicknesses of bottom $SiO_2$ and cap $SiO_2$ was about 500 ${\AA}$ and about 3500 ${\AA}$. Diffusion temperatures were $760^{\circ}C$, $780^{\circ}C$, and $800^{circ}C$, and diffusion times were 1, 2, 3, 4, 5, and 6 hr. LED chips were fabricated by the diffused wafers at Fab. The peak wavelength of all chips showed about 625~650 nm and red color. Main reason for Iv change was by diffusion temperature not diffusion time. The lower temperature was the higher Iv. We thick that these properties is because of the very high diffusion temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.481-485
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• 2003

To diffuse Zn at solid-state, the $SiO_2/ZnO/SiO_2$ wafers was made by PECVD and RF Spotter. Thicknesses of bottom $SiO_2$ and cap $SiO_2$ was about $500{\AA}$ and about $3500{\AA}$. First test was Diffusion temperatures were $760^{\circ}C$, $780^{\circ}C$, and $800^{\circ}C$, and diffusion times were 1, 2, 3, 4, 5, and 6 hr and 2nd test was Diffusion temperatures were $760^{\circ}C$, $720^{\circ}C$, and $680^{\circ}C$, and diffusion times were 1, 2, 3, 4, 5, and 6 hr. LED chips were fabricated by the diffused wafers at Fab. The peak wavelength of all chips showed about $625{\sim}650\;nm$ and red color Main reason for Iv change was by diffusion temperature not diffusion time. The lower temperature was the higher Iv. We thick that these properties is because of the very high diffusion temperature.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.1
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• pp.19-24
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• 2010

The effects of $O_2$ plasma pretreatment on the properties of Ga-doped ZnO films on PET substrate were studied. GZO films were fabricated by RF magnetron sputtering process. To improve surface energy and adhesion between the PET substrate and the GZO film, $O_2$ plasma pretreatment process was used prior to GZO sputtering. As the RF power and the treatment time increased, the crystallinity increased and the contact angle decreased significantly. When the RF power was 100 W and the treatment time was 600 sec in $O_2$ plasma pretreatment process, the resistivity of GZO films on the PET substrate was $1.90{\times}10^{-3}{\Omega}-cm$.

• Journal of the Korean Chemical Society
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• v.47 no.4
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• pp.370-375
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• 2003

$BaMg_2Al_16O_27:Eu,\SrGa_2S_4:Eu$, and ZnCdS:Ag,Cl phosphors were chosen to produce blue, green, and red emissions, respectively, under excitation from a violet light emitting diode (LED). A four-band white LED was obtained by a combination of nonabsorbed violet emission from a violet LED and blue, green, and red emissions from $BaMg_2Al_16O_27:Eu,\SrGa_2S_4:Eu$, and ZnCdS:Ag,Cl phosphors. The luminescent properties of the four-band white LED were also discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.6
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• pp.499-502
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• 2008

In this work, Ga-doped ZnO (GZO) thin films for gas sensor application were deposited on low temperature co-fired ceramics (LTCC) substrates, by RF magnetron sputtering method. The LTCC substrate is one of promising materials for this application since it has many advantages (e.g., low cost production, high manufacturing yields and easy realizing 3D structure etc.). The LTCC substrates with thickness of $400\;{\mu}m$ were fabricated by laminating 12 green tapes which consist of alumina and glass particle in an organic binder. The structural properties of the fabricated GZO thin film with thickness of 50 nm is analyzed by X-ray diffraction method (XRD) and field emission scanning electron microscope (FESEM). The film shows good adhesion to the substrate. The GZO gas sensors are tested by gas measurement system and show fast response and recovery characteristics to $NO_x$ gas that is 27.2 and 27.9 sec, recpectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.297-297
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• 2010

Transparent conductive Oxide (TCO) is an essential material in the various optoelectronic applications as a transparent electrode, such as solar cells, flat panel displays and organic light emitting diodes. Currently, Indium tin oxide (ITO) is commonly used in industry due to its low electrical resistivity, high transmittance and high adhesion to substrate. However, ITO is expensive and should be prepared at high temperature, which makes it hard to use ITO in flexible devices. In this regard, Ga-doped ZnO is expected as an ideal candidate for replacing ITO.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.67-70
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• 2003

합성된 GaN, ZnO 나노선 네트워크를 이용하여 전류-전압 특성을 조사하고 정류성 특징을 가지는 나노선네트워크에 대해서는 다이오드의 이상지수를 측정하여 기존의 다이오드의 특성과 비교 분석하고 간단한 광 특성 측정을 하여 광전소자로서의 가능성도 확인해 보았다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.111.2-111.2
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• 2012

정보 기술 시대에 맞춰 광전소자의 연구가 활발해지면서 투명전극으로 사용될 수 있는 Transparent Conductive Oxide (TCO) 재료에 대한 관심이 높아지고 있다. 하지만 TCO의 대표적인 물질인 Indium Tin Oxide (ITO)의 경우 In의 가격 상승으로 인해 최근에는 낮은 전도도와 높은 투과도를 가질 수 있는 대체 물질에 대한 연구가 활발히 진행되고 있다. 그 중에서 3.2 eV 의 높은 밴드갭을 갖는 ZnO 는 가시광선 영역에서 높은 투과율을 나타낼 뿐만 아니라 Al, Ga을 도핑함으로써 낮은 전도도를 가질 수 있다. 이러한 TCO 재료는 surface texturing을 통하여 optical region 에서 반사를 억제 시킴으로서 빛을 모으는 역할을 하여 태양전지의 효율을 향상 시킬 수 있기 때문에 PV (Photovoltaics) Cell의 anti-reflective coating에 적용 할 수 있다. 본 연구에서는 pulsed DC magnetron sputtering을 이용하여 Ga-doped ZnO (GZO) 박막을 증착하였고, HCl 0.5 wt %로 wet etching을 통하여 surface texturing을 진행하였다. 결정성은 X-ray diffractometer (XRD)로 분석하였으며, 표면 형상은 Scanning Electron Microscope (SEM)을 통해 확인하였다. Van der Pauw 방법을 통해 resistivity, carrier concentration, hall mobility 등의 전기적 특성을 분석하였고 UV-Vis spectrophotometer 를 통해 투과도 및 반사도를 측정하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.2
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• pp.69-74
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• 2016

In this study, we proposed an a-IGZO (amorphous In-Ga-Zn-O) TFT (thin-film transistor) with off-planed source/drain structure. Furthermore, two different electrode materials (ITO and Ti) were applied to the source and drain contacts for performance improvement of a-IGZO TFTs. When the ITO with a large work-function and the Ti with a small work-function are applied to drain electrode and source contact, respectively, the electrical performances of a-IGZO TFTs were improved; an increased driving current, a decreased leakage current, a high on-off current ratio, and a reduced subthreshold swing. As a result of gate bias stress test at various temperatures, the off-planed S/D a-IGZO TFTs showed a degradation mechanism due to electron trapping and both devices with ITO-drain or Ti-drain electrode revealed an equivalent instability.