Browse > Article
http://dx.doi.org/10.4313/JKEM.2016.29.2.69

Performance Improvement of Amorphous In-Ga-Zn-O Thin-film Transistors Using Different Source/drain Electrode Materials  

Kim, Seung-Tae (Department of Electronic Materials Engineering, Kwangwoon University)
Cho, Won-Ju (Department of Electronic Materials Engineering, Kwangwoon University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.29, no.2, 2016 , pp. 69-74 More about this Journal
Abstract
In this study, we proposed an a-IGZO (amorphous In-Ga-Zn-O) TFT (thin-film transistor) with off-planed source/drain structure. Furthermore, two different electrode materials (ITO and Ti) were applied to the source and drain contacts for performance improvement of a-IGZO TFTs. When the ITO with a large work-function and the Ti with a small work-function are applied to drain electrode and source contact, respectively, the electrical performances of a-IGZO TFTs were improved; an increased driving current, a decreased leakage current, a high on-off current ratio, and a reduced subthreshold swing. As a result of gate bias stress test at various temperatures, the off-planed S/D a-IGZO TFTs showed a degradation mechanism due to electron trapping and both devices with ITO-drain or Ti-drain electrode revealed an equivalent instability.
Keywords
a-IGZO (amorphous In-Ga-Zn-O); TFT (thin-film transistor); Work function;
Citations & Related Records
연도 인용수 순위
  • Reference
1 V. Subramanian, M. Toita, N. R. Ibrahim, S. J. Souri, and K. C. Saraswat, Electron Device Letters, IEEE, 20, 7 (1999). [DOI:http://dx.doi.org/10.1109/55.772370]
2 A. Suresh, P. Wellenius, A. Dhawan, and J. Muth, Applied physics letters, 90, 12 (2007). [DOI: http://dx.doi.org/10.1063/1.2716355]
3 K. Nomura, A. Takagi, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, Japanese Journal of Applied Physics, 45, 5S (2006).
4 Y. Shimura, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, Thin Solid Films, 516, 17 (2008). [DOI: http://dx.doi.org/10.1016/j.tsf.2007.10.051]
5 W. S. Kim, Y. K. Moon, K. T. Kim, J. H. Lee, and J. W, Thin Solid Films, 518, 22 (2010). [DOI: http://dx.doi.org/10.1016/j.tsf.2010.03.028]
6 J. H. Na, M. Kitamura, and Y. Arakawa, Applied Physics Letters, 93, 6 (2008).
7 J. M. Lee, I. T. Cho, J. H. Lee, and H. I. Kwon, Applied Physics Letters, 93, 9 (2008).
8 S. H. Rha, U. K. Kim, J. S. Jung, H. K. Kim, Y. S. Jung, E. S. Hwang, Y. J. Chung, M. J. Lee, J. H. Choi, and C. S. Hwang, Electron Devices, IEEE Transactions on, 60, 3 (2013). [DOI: http://dx.doi.org/10.1109/TED.2012.2236558]
9 K. W. Jo, AND W, J. Cho, Applied Physics Letters, 105, 21 (2014).
10 A. Suresh, and J. F. Muth, Applied Physics Letters, 92, 3 (2008). [DOI: http://dx.doi.org/10.1063/1.2824758]
11 M. Ito, M. Kon, C. Miyazaki, N. Ikeda, M. Ishizaki, Y. Ugajin, and N. Sekine, IEICE transactions on electronics, 90, 11 (2007).
12 T. Kamiya, K. Nomura, and H. Hosono, Science and Technology of Advanced Materials, 11, 4 (2010).
13 K. Sera, F. Okumura, H. Uchida, S. Itoh, S. Kaneko, and K. Hotta, Electron Devices, IEEE Transactions on, 36, 12 (1989). [DOI: http://dx.doi.org/10.1109/16.40970]   DOI
14 S. J. Lim, S. J. Kwon, H. Kim, and J. S. Park, Applied Physics Letters, 91, 18 (2007).
15 H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, and H. Hosono, Applied physics letters, 89, 11 (2006). [DOI: http://dx.doi.org/10.1063/1.2353811]   DOI
16 A. Suresh and J. F. Muth, Applied Physics Letters, 92, 3 (2008). [DOI: http://dx.doi.org/10.1063/1.2824758]
17 S. Y. Park, J. H. Song, C. K. Lee, B. G. Son, C. K. Lee, H. J. Kim, and H. J. Kim, Electron Device Letters, IEEE, 34, 7 (2013).
18 B. Yaglioglu, H. Y. Yeom, R. Beresford, and D. C. Paine, Applied physics letters, 89, 6 (2006). [DOI: http://dx.doi.org/10.1063/1.2335372]