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Properties of Ga-doped ZnO transparent conducting oxide fabricated on PET substrate by RF magnetron sputtering  

Kim, Jeong-Yeon (Department of Electronic Engineering, Chungju National University)
Kim, Byeong-Guk (Department of Electronic Engineering, Chungju National University)
Lee, Yong-Koo (Department of Electronic Engineering, Chungju National University)
Kim, Jae-Hwa (Department of Electronic Engineering, Chungju National University)
Woo, Duck-Hyun (Department of Materials Science and Engineering, Chungju National University)
Kweon, Soon-Yong (Department of Materials Science and Engineering, Chungju National University)
Lim, Dong-Gun (Department of Electronic Engineering, Chungju National University)
Park, Jae-Hwan (Department of Electronic Engineering, Chungju National University)
Publication Information
Journal of the Microelectronics and Packaging Society / v.17, no.1, 2010 , pp. 19-24 More about this Journal
Abstract
The effects of $O_2$ plasma pretreatment on the properties of Ga-doped ZnO films on PET substrate were studied. GZO films were fabricated by RF magnetron sputtering process. To improve surface energy and adhesion between the PET substrate and the GZO film, $O_2$ plasma pretreatment process was used prior to GZO sputtering. As the RF power and the treatment time increased, the crystallinity increased and the contact angle decreased significantly. When the RF power was 100 W and the treatment time was 600 sec in $O_2$ plasma pretreatment process, the resistivity of GZO films on the PET substrate was $1.90{\times}10^{-3}{\Omega}-cm$.
Keywords
transparent conducting oxide; RF magnetron sputtering; PET substrate; ZnO; $O_2$ plasma;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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