Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Performance Improvement of Amorphous In-Ga-Zn-O Thin-film Transistors Using Different Source/drain Electrode Materials

서로 다른 소스/드레인 전극물질을 이용한 비정질 In-Ga-Zn-O 박막트랜지스터 성능향상

  • Kim, Seung-Tae (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Cho, Won-Ju (Department of Electronic Materials Engineering, Kwangwoon University)
  • 김승태 (광운대학교 전자재료공학과) ;
  • 조원주 (광운대학교 전자재료공학과)
  • Received : 2016.01.08
  • Accepted : 2016.01.24
  • Published : 2016.02.01
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Abstract

In this study, we proposed an a-IGZO (amorphous In-Ga-Zn-O) TFT (thin-film transistor) with off-planed source/drain structure. Furthermore, two different electrode materials (ITO and Ti) were applied to the source and drain contacts for performance improvement of a-IGZO TFTs. When the ITO with a large work-function and the Ti with a small work-function are applied to drain electrode and source contact, respectively, the electrical performances of a-IGZO TFTs were improved; an increased driving current, a decreased leakage current, a high on-off current ratio, and a reduced subthreshold swing. As a result of gate bias stress test at various temperatures, the off-planed S/D a-IGZO TFTs showed a degradation mechanism due to electron trapping and both devices with ITO-drain or Ti-drain electrode revealed an equivalent instability.

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