• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.308-311
• /
• 1999

The varistor characteristics of $ZnO-Pr_6O_11-CoO-Er_2O_3$-based ceramics were investigated. $ZnO-Pr_6O_11-CoO-Er_2O_3$-based ceramics were sintered at $1300^{\circ}C$ and $1350^{\circ}C$in the addition range 0.0~2.0mol% $Er_2O_3$, respectively. $ZnO-Pr_6O_11-CoO-Er_2O_3$-based ceramics, which are added with 0.5mol% $Er_2O_3$ at $1300^{\circ}C$ and l.Omol% $Er_2O_3$ at $1350^{\circ}C$ sintering temperature, exhibited the bestexcellent varistor characteristics, namely, the nonlinear exponent was better 52.78 at $1300^{\circ}C$ thanat 13$1350^{\circ}C$ and the leakage current was better 6.57$\mu\textrm$A at $1350^{\circ}C$ than at $1300^{\circ}C$. Consequently, it is estimated that $ZnO-Pr_6O_11-CoO-Er_2O_3$-based ceramics, which $Er_2O_3$ is added in the range 0.5~l.Omol% will begin to be used as a predominant basic composition of $PR_6O_11$-based ZnO varistors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.2
• /
• pp.91-95
• /
• 2012

ZnO thin films were deposited on p-type 4H-SiC substrate by pulsed laser deposition. ZnO nanowires were formed on p-type 4H-SiC substrate by furnace. Ti/Au electrodes were deposited on ZnO thin film/SiC and ZnO nanowire/SiC structures, respectively. Structural and crystallographical properties of the fabricated ZnO thin film/SiC and ZnO nanowire/SiC structures were investigated by field emission scanning electron microscope and X-ray diffraction. In this work, resistance and sensitivity of ZnO thin film/SiC gas sensor and ZnO nanowire/SiC gas sensor were measured at $300^{\circ}C$ with various CO gas concentrations (0%, 90%, 70%, and 50%). Resistance of gas sensor decreases at CO gas atmosphere. Sensitivity of ZnO nanowire/SiC gas sensor is twice as big as sensitivity of ZnO thin film/SiC gas sensor.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.63 no.1
• /
• pp.76-79
• /
• 2014

We report Zinc oxide (ZnO) nanorods synthesis and electrochemical luminescence (ECL) cell fabrication. The ECL cell was fabricated using the electrode of ZnO nanorods and Ru(II) complex ($Ru(bpy)_3{^{2+}}$) as a luminescence materials. The fabricated ECL cell is composed of F-doped $SnO_2$ (FTO) glass/ Ru(II)/ZnO nanorods/FTO glass. The highest intensity of the emitting light was obtained at the wavelength of ~620 nm which corresponds to dark-orange color. At a bias voltage of 3V, the measured ECL efficiencies were 5 $cd/m^2$ for cell without ZnO nanorod, 145 $cd/m^2$ for ZnO nanorods-$5{\mu}m$, 208 $cd/m^2$ for ZnO nanorods-$8{\mu}m$ and 275 $cd/m^2$ for ZnO nanorods-$10{\mu}m$, respectively. At a bias voltage of 3.5V, the use of ZnO nanorods increases ECL intensities by about 3 times compared to the typical ECL cell without the use of ZnO nanorods.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2009.11a
• /
• pp.25.2-25.2
• /
• 2009

Vertically aligned zinc oxide(ZnO) nanorods (NRs) with different surface morphology were grown by metal organic chemical vapor deposition (MOCVD) on sapphire substrate with different deposition condition. Based on the surface morphology, ZnO nanostructures are divided into three types: nanoneedles, nanonails and nanorods with rounded tip. Variable temperature photoluminescence (PL) have employed to probe the exciton recombination in high density and vertically aligned ZnO Nanorod arrays. Low temperature photoluminescence measurements do not show any significant yellow emission, but the near band edge excitonic emission shows very strong dependence with the surface morphology. The recombination properties are expected to be different due to different surface-to-volume ratio and distribution of potential fluctuations of intrinsic defects.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2013.05a
• /
• pp.138-139
• /
• 2013

본 연구는 ZnO-TFT 소자에 Hf의 첨가에 따른 소자 특성 및 게이트 바이어스 스트레스에 대한 특성에 대해 분석을 하였다. Hf-Zn-O 박막은 Hf의 조성이 증가함에 따라 작아지는 grain size로 인해 TFT 소자의 전계효과 이동도와 게이트 바이어스 스트레스에서의 문턱전압의 변화가 더 커지는 것을 확인하였다. 한편, Hf이 14at% 함유된 HZO-TFT에서는 이동도는 현저히 저하되었지만, 게이트 바이어스 스트레스에서의 문턱전압의 변화가 현저히 개선되는 것을 확인하였는데, 이는 Hf의 조성이 증가함에 따라 비정질화 되어 grain boundaries에 의한 trap의 영향이 줄어든 결과를 확인하였다. 또한, 전계효과 이동도와 소자의 안정성을 확보하기 위해, poly-ZnO와 amorphous-HZO로 구성된 다중층 채널 구조를 이용한 TFT소자에서는 전계효과 이동도과 소자의 안정성이 개선된 결과를 보였다. 이는 채널과 게이트 산화물의 interface charge trap의 감소와 back-channel effect가 감소한 결과임을 확인하였다.

• Journal of information and communication convergence engineering
• /
• v.2 no.3
• /
• pp.149-152
• /
• 2004

In this paper, we present the film bulk acoustic resonator (FBAR) devices fabricated by considering the effects of annealing temperature on zinc oxide (ZnO) film growth characteristics. In order to determine the annealing temperature and annealing time at which the ZnO film can have good material properties, the several resonators containing ZnO layers were fabricated and annealed at various temperatures from $27^{\circ}C\;to\;300^{\circ}C$ in Ar gas ambient. The effects of the annealing temperature and annealing time on the ZnO film properties were comprehensively studied in order to further improve the resonance characteristics of FBAR resonators.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2004.05a
• /
• pp.16-19
• /
• 2004

In this paper, we present the film bulk acoustic resonator (FBAR) devices fabricated by considering the effects of annealing temperature on zinc oxide (ZnO) film growth characteristics. In order to determine the annealing temperature and annealing time at which the ZnO film can have good material properties, the several resonators containing ZnO layers were fabricated and annealed at various temperatures from 27$^{\circ}C$ to 30$0^{\circ}C$ in Ar gas ambient. The effects of the annealing temperature and annealing time on the ZnO film properties were comprehensively studied in order to further improve the resonance characteristics of FBAR resonators.

• Journal of the Microelectronics and Packaging Society
• /
• v.27 no.1
• /
• pp.31-35
• /
• 2020

This study demonstrates metal-oxide based memtransistor device and the gate tunable memristive characteristic using atomic layer deposition (ALD) and ZnO n-type oxide semiconductor. We fabricated a memtransistor device having channel width 70 ㎛, channel length 5 ㎛, back gate, using 40 nm thick ZnO thin film, and measured gate-tunable memristive characteristics at each gate voltage (50V, 30V, 10V, 0V, -10V, -30V, -50V) under humidity of 40%, 50%, 60%, and 70% respectively, in order to investigate the relation between a memristive characteristic and hydrogen doping effect on the ZnO memtransistor device. The electron mobility and gate controllability of memtransistor device decreased with an increase of humidity due to increased electron carrier concentration by hydrogen doping effect. The gate-tunable memristive characteristic was observed under humidity of 60% 70%. Resistive switching ratio increased with an increase of humidity while it loses gate controllability. Consequently, we could obtain both gate controllability and the large resistive switching ratio under humidity of 60%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.27 no.4
• /
• pp.203-208
• /
• 2014

In this study, Sputtering method was used to grow Al-dopes ZnO films on a CIGS absorber layer, in order to examine the effect of TCO on properties of CIGS solar cell devices. Structural, electrical and optical properties were investigated by varied thickness of Al-dopes ZnO films. Also, relation to the application as a window layer in CIGS thin film solar cell were studied. It was found that the electrical and structural properties of ZnO:Al film improved with increasing its thickness. However, the optical properties degraded. Jsc of the fabricated CIGS based solar cells was significantly influenced by the variation of the ZnO:Al window layer thickness. Because ZnO:Al window layer is one of the Rs factors in CIGS solar cell. Rs has the biggest influence on efficiency characteristic. In order to obtain high efficiency of CIGS solar cell, ZnO:Al window layer should be fabricated with electrically and optically optimized.

• Advances in nano research
• /
• v.10 no.2
• /
• pp.191-210
• /
• 2021

To compare the antifungal effect of two nanomaterials (NMs), nanoparticles of zinc oxide were synthesized by a chemical route and zinc oxide-based nanobiohybrids were obtained using green synthesis in an extract of garlic (Allium sativum). The techniques of X-Ray Diffraction (XRD), Infrared (IR) and Ultraviolet Visible (UV-Vis) absorption spectroscopies and Scanning (SEM) and Transmission Electron Microscopies (TEM) were used to determine the characteristics of the nanomaterials synthesized. The results showed that the samples obtained were of nanometric size (< 100 nm). To compare their antifungal capacity, their effect on Cercospora sp. was evaluated. Test results showed that both nanomaterials had an antifungal capacity. The nanobiohybrids (green route) gave an inhibition of fungal growth of ~72.4% while with the ZnO-NPs (chemical route), inhibition was ~87.1%. Microstructural studies using High Resolution Optical Microscopy (HROM) and ultra-structural analysis using TEM carried out on the treated strains demonstrated the effect of the nanofungicides on the vegetative and reproductive structures, as well as on their cell wall. To account for the antifungal effect presented by ZnO-NPs and ZnO nanobiohybrids on the fungi tested, effects reported in the literature related to the action of nanomaterials on biological entities were considered. Specifically, we discuss the electrical interaction of the ZnO-NPs with the cell membrane and the biomolecules (proteins) present in the fungi, taking into account the n-type nature of the ZnO semiconductor and the electrical behavior of the fungal cell membrane and that of the proteins that make up the protein crown.