Proceedings of the Korean Institute of Information and Commucation Sciences Conference (한국정보통신학회:학술대회논문집)

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
권호 표지

Dependence of Resonance Characteristics on Thermal Annealing in ZnO-Based FBAR Devices

  • Mai Linh (School of Eng., Information ＆ Communications University (ICU)) ;
  • Munhyuk Yim (School of Eng., Information ＆ Communications University (ICU) ;
  • Kim, Dong-Hyun (School of Eng., Information ＆ Communications University (ICU) ;
  • Giwan Yoon (School of Eng., Information ＆ Communications University (ICU))
  • Published : 2004.05.01
Download PDF
⟨ Previous Next ⟩

Abstract

In this paper, we present the film bulk acoustic resonator (FBAR) devices fabricated by considering the effects of annealing temperature on zinc oxide (ZnO) film growth characteristics. In order to determine the annealing temperature and annealing time at which the ZnO film can have good material properties, the several resonators containing ZnO layers were fabricated and annealed at various temperatures from 27$^{\circ}C$ to 30$0^{\circ}C$ in Ar gas ambient. The effects of the annealing temperature and annealing time on the ZnO film properties were comprehensively studied in order to further improve the resonance characteristics of FBAR resonators.

Keywords