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http://dx.doi.org/10.4313/JKEM.2014.27.4.203

Improvement of Efficiency of Cu(Inx,Ga1-x)Se2 Thin Film Solar Cell by Enhanced Transparent Conductive Oxide Films  

Kim, Kilim (Korea Institute of Industrial Technology)
Son, Kyeongtae (Department of Electronic Engineering, Korea National University of Transportation)
Kim, Minyoung (Department of Electronic Engineering, Korea National University of Transportation)
Shin, Junchul (Department of IT Convergence, Korea National University of Transportation)
Jo, Sunghee (Department of IT Convergence, Korea National University of Transportation)
Lim, Donggun (Department of Electronic Engineering, Korea National University of Transportation)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.27, no.4, 2014 , pp. 203-208 More about this Journal
Abstract
In this study, Sputtering method was used to grow Al-dopes ZnO films on a CIGS absorber layer, in order to examine the effect of TCO on properties of CIGS solar cell devices. Structural, electrical and optical properties were investigated by varied thickness of Al-dopes ZnO films. Also, relation to the application as a window layer in CIGS thin film solar cell were studied. It was found that the electrical and structural properties of ZnO:Al film improved with increasing its thickness. However, the optical properties degraded. Jsc of the fabricated CIGS based solar cells was significantly influenced by the variation of the ZnO:Al window layer thickness. Because ZnO:Al window layer is one of the Rs factors in CIGS solar cell. Rs has the biggest influence on efficiency characteristic. In order to obtain high efficiency of CIGS solar cell, ZnO:Al window layer should be fabricated with electrically and optically optimized.
Keywords
Solar cell; $Cu(In_x,Ga_{1-x})Se_2$; Transparent conductive oxide films; ZnO:Al layer;
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