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Dependence of Resonance Characteristics on Thermal Annealing in ZnO-Based FBAR Devices  

Mai Linh (KIMICS)
Yim Mun-Hyuk (KIMICS)
Yoon Gi-Wan (KIMICS)
Kim Dong-Hyun (KIMICS)
Publication Information
Journal of information and communication convergence engineering / v.2, no.3, 2004 , pp. 149-152 More about this Journal
Abstract
In this paper, we present the film bulk acoustic resonator (FBAR) devices fabricated by considering the effects of annealing temperature on zinc oxide (ZnO) film growth characteristics. In order to determine the annealing temperature and annealing time at which the ZnO film can have good material properties, the several resonators containing ZnO layers were fabricated and annealed at various temperatures from $27^{\circ}C\;to\;300^{\circ}C$ in Ar gas ambient. The effects of the annealing temperature and annealing time on the ZnO film properties were comprehensively studied in order to further improve the resonance characteristics of FBAR resonators.
Keywords
film bulk acoustic wave resonator (FBAR); microwave monolithic integrated circuits (MMICs); photoresist (PR); Bragg reflector;
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