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http://dx.doi.org/10.6117/kmeps.2020.27.1.0031

Resistive Switching Characteristic of ZnO Memtransistor Device by a Proton Doping Effect  

Son, Ki-Hoon (Department of Materials Science & Engineering, Kangwon National University)
Kang, Kyung-Mun (Department of Materials Science and Engineering, Yonsei University)
Park, Hyung-Ho (Department of Materials Science and Engineering, Yonsei University)
Lee, Hong-Sub (Department of Materials Science & Engineering, Kangwon National University)
Publication Information
Journal of the Microelectronics and Packaging Society / v.27, no.1, 2020 , pp. 31-35 More about this Journal
Abstract
This study demonstrates metal-oxide based memtransistor device and the gate tunable memristive characteristic using atomic layer deposition (ALD) and ZnO n-type oxide semiconductor. We fabricated a memtransistor device having channel width 70 ㎛, channel length 5 ㎛, back gate, using 40 nm thick ZnO thin film, and measured gate-tunable memristive characteristics at each gate voltage (50V, 30V, 10V, 0V, -10V, -30V, -50V) under humidity of 40%, 50%, 60%, and 70% respectively, in order to investigate the relation between a memristive characteristic and hydrogen doping effect on the ZnO memtransistor device. The electron mobility and gate controllability of memtransistor device decreased with an increase of humidity due to increased electron carrier concentration by hydrogen doping effect. The gate-tunable memristive characteristic was observed under humidity of 60% 70%. Resistive switching ratio increased with an increase of humidity while it loses gate controllability. Consequently, we could obtain both gate controllability and the large resistive switching ratio under humidity of 60%.
Keywords
Memtransistor; Resistive switching; Gate tunability; Hydrogen; Humidity;
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Times Cited By KSCI : 2  (Citation Analysis)
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