Resistive Switching Characteristic of ZnO Memtransistor Device by a Proton Doping Effect |
Son, Ki-Hoon
(Department of Materials Science & Engineering, Kangwon National University)
Kang, Kyung-Mun (Department of Materials Science and Engineering, Yonsei University) Park, Hyung-Ho (Department of Materials Science and Engineering, Yonsei University) Lee, Hong-Sub (Department of Materials Science & Engineering, Kangwon National University) |
1 | Z. Li and S. Zhang, "Domain-wall dynamics driven by adiabatic spin-transfer torques", Phys. Rev. B, 70(2), 024417 (2004). DOI |
2 | H. S. Lee, S. G. Choi, H.-H. Park, and M. J. Rozenberg, "A new route to the Mott-Hubbard metal-insulator transition: Strong correlations effects in ", Sci. Rep., 3, 1704 (2013). DOI |
3 | H.-Y. Kim, S.-J. Park, and G. E. Jang, "Microstructure and Electrical Properties of Ferroelectric Thin Films Prepared by RF Magnetron Sputtering Method", J. Microelectron. Packag. Soc., 6(2), 51 (1999). |
4 | J. J. Yang, M. D. Pickett, X. Li, D. A. A. Ohlberg, D. R. Stewart, and R. S. Williams, "Memristive switching mechanism for metal/oxide/metal nanodevices", Nat. nanotechnol., 3(7), 429 (2008). DOI |
5 | H. S. Lee, "The Latest Trends and Issues of Anion-based Memristor", J. Microelectron. Packag. Soc., 26(1), 1 (2019). DOI |
6 | H. S. Lee, H.-H. Park, and M. J. Rozenberg, "Manganitebased memristive heterojunction with tunable non-linear I-V characteristics", Nanoscale, 7(15), 6444 (2015). DOI |
7 | V. K. Sangwan, H.-S. Lee, H. Bergeron, I. Balla, M. E. Beck, K.-S. Chen, and M. C. Hersam, "Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide", Nature, 554(7693), 500 (2018). DOI |
8 | D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, "The missing memristor found", Nature, 453(7191), 80 (2008). DOI |
9 | A. Sawa, "Resistive switching in transition metal oxides", Mater. Today, 11(6), 28 (2008). DOI |
10 | R. Waser, R. Dittmann, G. Staikov, and K. Szot, "Redox-Based Resistive Switching Memories-Nanoionic Mechanisms, Prospects, and Challenges", Adv. Mater., 21(25-26), 2632 (2009). DOI |
11 | A. Chanthbouala, V. Garcia, R. O. Cherifi, K. Bouzehouane, S. Fusil, X. Moya, S. Xavier, H. Yamada, C. Deranlot, N. D. Mathur, M. Bibes, A. Barthelemy, and J. Grollier, "A ferroelectric memristor", Nat. Mater., 11, 860 (2012). DOI |
12 | L.-Y. Chen, W.-H. Chen, J.-J. Wang, and F. C.-N. Hong, "Hydrogen-doped high conductivity ZnO films deposited by radio-frequency magnetron sputtering", Appl. Phys. Lett., 85(23), 5628 (2004). DOI |
13 | Y. Yang, H. Du, Q. Xue, X. Wei, Z. Yang, C. Xu, D. Lin, W. Jie, and J. Hao, "Three-terminal memtransistors based on two-dimensional layered gallium selenide nanosheets for potential low-power electronics applications", Nano Energy, 57, 566 (2019). DOI |
14 | L. Wang, W. Liao, S. L., Wong, Z. G. Yu, S. Li, Y.-F. Lim, X. Feng, W. C. Tan, X. Huang, L. Chen, L. Liu, J. Chen, X. Gong, C. Zhu, X. Liu, Y.-W. Zhang, D. Chi, and K.-W. Ang, "Artificial Synapses Based on Multiterminal Memtransistors for Neuromorphic Application", Adv. Funct. Mater., 29(25), 1901106 (2019). DOI |
15 | V. Lujala, J. Skarp, M. Tammenmaa, and T. Suntola, "Atomic layer epitaxy growth of doped zinc oxide thin films from organometals", Appl. Surf. Sci., 82-83, 34 (1994). DOI |
16 | Z. Zhou, K. Kato, T. Komaki, M. Yoshino, H. Yukawa, M. Morinaga, and K. Morita, "Effects of dopants and hydrogen on the electrical conductivity of ZnO", J. Eur. Ceram. Soc., 24(1), 139 (2004). DOI |
17 | J. Lee, S. Choi, C. Lee, Y. Kang, and D. Kim, "GeSbTe deposition for the PRAM application", Appl. Surf. Sci., 253(8), 3969 (2007). DOI |