• Transactions on Electrical and Electronic Materials
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• 제6권5호
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• pp.214-220
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• 2005

The ferroelectric properties of the $Pt/PZT(Pb(Zr,Ti)O_3)/Pt$ capacitors are severely degraded when they are annealed in hydrogen-containing environment. Hydrogen atoms created by the catalytic reaction of Pt top electrode during annealing in hydrogen ambient penetrate into PZT films and generate oxygen vacancies by the reduction of the PZT films, which is likely to cause the degradation. The degree of hydrogen-induced degradation and the direction of voltage shift in P-E curves of the pre-poled PZT capacitors after annealing in hydrogen ambient is dependent on the polarity of the pre-poling voltage. This implies that oxygen vacancies causing hydrogen induced degradation are generated by hydrogen ions having a polarity. The degraded ferroelectricity of the PZT capacitors can be effectively recovered by the shift of oxygen vacancies toward the Pt top electrode interface during post-annealing in oxygen environment with applying negative unipolar stressing.

• 한국결정성장학회지
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• 제11권1호
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• pp.38-42
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• 2001

Electric and dielectric(Ba,Sr)$TiO_3$[BST] thin films for emtal-Insulator-Semiconductor(MIS) capacitors have been studied. BST thin films wre deposted on p-Si(100) substrates bythe RF magnetron sputtering with tempratue range of 500~$600^{\circ}C$. The dielectric properties of MIS capacitors consisting of Al/BST/$SiO_2$/Si sandwich structure were evaluated ot redcue the leakage current density. The charge state densities of the MIS capacitors were determined by high frequency (1 MHz) C-V measurement. In order to reduce the leakage current in MIS capacitor, high quality $SiO_2$ layer was deposited on bare p-Si substrate. Depending on the oxygen pressure and substrate temperature both positive and negative polarities of effective oxide charge in the MIS capacitors were evaluated. It is considered that the density of electronic states, generated at the BST/$SiO_2$/p-Si interface due to the asymmetric structure within BST/$SiO_2$/Si structure, and the oxygen vacancy content has influence on the behavior of oxide charge.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 A
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• pp.295-297
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• 2002

In this study, Genetic Algorithm(GA) is applied for voltage and reactive power control in power system. In power system, switched shunt capacitors are used to improve the voltage profile and to reduce power losses. There are many switched shunt capacitors in power system. Therefore, it is necessary to coordinate these switched shunt capacitors. A Genetic Algorithm(GA) is used to find optimal coordination of switched shunt capacitors in power system. The effectiveness of the proposed approach is demonstrated in KEPCO's power system.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.861-863
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• 2003

In this work, the preparations and characteristics of capacitors and inductors for RF IC as a integrated devices are investigated. These kinds of capacitors and inductors can be applicable to the passive components utilized in voltage controlled oscillator(VCO), low noise amplifier(LAN), mixer and synthesizer for mobile telecommunication of radio frequency band(900 MHz to 2.2GHz), and in a library of monolithic microwave integrated circuit(MMIC). The results show that these inductors and capacitors array for RF IC may be applicable to the RF IC passive components for mobile telecommunication.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.197-197
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• 2008

There are fast growing demands for new dielectric materials for passive capacitors of RF-ICs and other wireless applications. One of the bulk microwave dielectric materials which have superior properties is $ZrTiO_4$ due to its large dielectric constant and high quality factor. Therefore, $ZrTiO_4$ is worth studying as a form of thin film to be applied for passive capacitors of integrated circuits. In this study, we fabricated metal-insulator-metal type capacitors with $ZrTiO_4$ dielectric thin film, and evaluated their capacitor properties.

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권4호
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• pp.257-263
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• 2006

New charge pump circuits with low area and high power efficiency are proposed and verified in this paper. These pump circuits do not suffer the voltage stress higher than $V_{DD}$ across their pumping capacitors. Thus they can use the thin-oxide MOSFETs as the pumping capacitors. Using the thin-oxide capacitors can reduce the area of charge pumps greatly while keeping their driving capability. Comparing the new pump (NCP-2) with the conventional pump circuit using the thick-oxide capacitors shows that the power efficiency of NCP-2 is the same with the conventional one but the area efficiency of NCP-2 is improved as much as 71.8% over the conventional one, when the $V_{PP}/V_{DD}$ ratio is 3.5 and $V_{DD}$=1.8V.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2008년도 춘계학술대회 논문집
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• pp.78-81
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• 2008

Capacitors are known as condensers. They play an important in the industrial site because of benefits such as var support, improved voltage control and power factor, increased system capacity, and reduction of system power losses. But capacitors can be seriously affected by bad power quality such as transient and impulsive overvoltage, overload, harmonics. Capacitor standards and application guides are revised or supplemented by speedy technology advancements in the manufacturing of capacitors and in the power electronics. This paper presents various illustrations and comparison for several standards of power system capacitors.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.198-199
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• 2005

Conformal mapping based models are given for interdigital capacitors on substrates with a thin superstrate and covering dielectric thin film. This model is useful for a wide range of dielectric constant and layer thickness. Interdigital capacitors with finger numbers n>3 are discussed.

• 한국신뢰성학회지:신뢰성응용연구
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• 제12권1호
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• pp.25-33
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• 2012

As to display products are made slim, the diameter of aluminum electrolytic capacitor is smaller and the length is longer to be fitted in. These small diameter and long length are pointed as the disadvantageous design factors of the capacitor's life cycle. So, the most electronic makers want to use proven capacitors (or well-known) to secure reliability of the electric products. In this study, we carried out the comparison analysis with two domestic capacitors and one foreign made capacitor. We designated separators, rubber breather and debris as the main factors that effect on the lifetime of capacitors. From the comparison results, we suggested the improvement points of the aluminum electrolytic capacitor.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.130-133
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• 2004

The characterization of interdigitated capacitors was investigated. The test structures are manufactured by low temperature co-fired ceramic(LTCC) process and their s-parameters were measured. The optimized equivalent circuit models for test structures were obtained using the partial element equivalent circuit(PEEC) method. Predictive modeling was performed on different test structures using optimized parameters to verify the circuit models. From this result, the manufacturability on the process can be improved through the predictive modeling for the characteristics of interdigitated capacitors.