• Carbon letters
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• 제24권
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• pp.73-81
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• 2017

Interconnected meso/microporous activated carbons were prepared from pumpkin seeds using a simple chemical activation method. The porous carbon materials were prepared at different temperatures (PS-600, PS-700, PS-800, and PS-900) and demonstrated huge surface areas ($645-2029m^2g^{-1}$) with excellent pore volumes ($0.27-1.30cm^3g^{-1}$). The well-condensed graphitic structure of the prepared activated carbon materials was confirmed by Raman and X-ray diffraction analyses. The presence of heteroatoms (O and N) in the carbon materials was confirmed by X-ray photoemission spectroscopy. High resolution transmission electron microscopic images and selected area diffraction patters further revealed the porous structure and amorphous nature of the prepared electrode materials. The resultant porous carbons (PS-600, PS-700, PS-800, and PS-900) were utilized as electrode material for supercapacitors. To our delight, the PS-900 demonstrated a maximum specific capacitance (Cs) of $303F\;g^{-1}$ in 1.0 M $H_2SO_4 $ at a scan rate of 5 mV. The electrochemical impedance spectra confirmed the poor electrical resistance of the electrode materials. Moreover, the stability of the PS-900 was found to be excellent (no significant change in the Cs even after 6000 cycles).

• Current Applied Physics
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• 제18권11호
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• pp.1300-1305
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• 2018

The tunable electronic performance of the solution-processed semiconductor metal oxide is of great significance for the printing electronics. In current work, transparent thin-film transistors (TFTs) with indium-zinc oxide (IZO) were fabricated as active layer by a simple eco-friendly aqueous route. The aqueous precursor solution is composed of water without any other organic additives and the IZO films are amorphous revealed by the X-ray diffraction (XRD). With systematic studies of atomic force microscopy (AFM), X-ray photoemission spectroscopy (XPS) and the semiconductor property characterizations, it was revealed that the electrical performance of the IZO TFTs is dependent on the concentration of precursor solution. As well, the optimum preparation process was obtained. The concentrations induced the regulation of the electronic performance was clearly demonstrated with a proposed mechanism. The results are expected to be beneficial for development of solution-processed metal oxide TFTs.

• Bulletin of the Korean Chemical Society
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• 제31권7호
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• pp.1973-1975
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• 2010

The electronic and adsorption structure of o-phthalaldehyde (OPA) on the H-Si(100) surface was investigated by using Near Edge X-ray Fine Structure (NEXAFS) and high resolution photoemission spectroscopy (HRPES). We confirmed that the OPA grown on the H-Si(100) surface showed good dependency with about 60 degree tilting angle using NEXAFS and a single O 1s peak by using HRPES. Hydrogen atom passivated on the Si(100) surface was found to be a seed for making one dimensional organic line that uses a chain reaction as the H-Si(100) surface was compared with the hydrogen free Si(100) surface.

• Transactions on Electrical and Electronic Materials
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• 제17권2호
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• pp.113-117
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• 2016

Temperature dependent reverse-bias current-voltage (I-V) characteristics in Cu Schottky contacts to oxygen plasma treated n-InP were investigated. For untreated sample, current transport mechanisms at low and high temperatures were explained by thermionic emission (TE) and TE combined with barrier lowering, respectively. For plasma treated sample, experimental I-V data were explained by TE or TE combined with barrier lowering models at low and high temperatures. However, the current transport was explained by a thermionic field emission (TFE) model at intermediate temperatures. From X-ray photoemission spectroscopy (XPS) measurements, phosphorus vacancies (VP) were suggested to be generated after oxygen plasma treatment. V_P possibly involves defects contributing to the current transport at intermediate temperatures. Therefore, minimizing the generation of these defects after oxygen plasma treatment is required to reduce the reverse-bias leakage current.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1992년도 추계학술발표강연 및 논문개요집
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• pp.6-6
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• 1992

Ionized cluster beam deposition (ICBD) technique has been employed to fabricate high-purity crystalline polyimide (PI) film. The pyromellitic dianhydride (PMDA) and oxydianiline (ODA) were deposited using dual ICB sources, Fourier trans forminfraredspectroscopy (FT-IR), X-ray photoemission spectroscopy (XPS), and Transmission electron microscopy (TEM)study show that the bulk and surface chemical properties and the crystalline structure are very sensitive to the ICBD conditions such as cluster ion acceleration voltage and ionization voltage, At optimum ICBD conditions, the PI films have a maximum imidization, negligible impurities(∼1% isoimide), and a good crystalline structure probably due to the high surface migration energy and surface cleaning effect. These characteristics are superior to those of films deposited by other techniques such as colvent cast, vapowr deposition, or sputtering techniques.

• Journal of Magnetics
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• 제17권4호
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• pp.261-264
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• 2012

Interfacial properties of 5 nm MgO(001)/7 nm Fe(001)/1.8 nm MgO(001)/t nm Cu-phthalocyanine (CuPc) hybrid multilayers with t = 0, 1, 7, and 10 were investigated by using x-ray photoemission spectroscopy (XPS). Rather sharp interfacial properties were observed in the CuPc films grown on an epitaxial MgO/Fe/MgO(001) trilayer than a MgO/Fe(001) bilayer. This work suggests a new way to improve device performance of organic spintronic devices by utilizing an artificially grown MgO(001) thin layer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.79-79
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• 2010

The electronic and adsorption structure of O-Phthaladehyde (OPA) on the H-Si(100) surface was investigated by using Near Edge X-ray Fine Structure (NEXAFS) and high resolution photoemission spectroscopy (HRPES). We confirmed that the OPA grown on the H-Si(100) surface showed good dependency with about 60 degree tilting angle using NEXAFS and a single O 1s peak by using HRPES. Hydrogen atom passivated on the Si(100) surface was found to be a seed for making one dimensional organic line that uses a chain reaction as the H-Si(100) surface was compared with the hydrogen free Si(100) surface. Through the spectral analysis, we will demonstrate 1-D directional formation of OPA on H-Si(100) surface using NEXAFS and HRPES.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.202.2-202.2
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• 2014

We have studied the bonding structures of five membered aromatic ring heterocyclic molecules, such as furan, thiophene, and selenophene, adsorbed on the Si(100) surface at room temperature with density functional theory. Additionally, we have investigated the evolution upon annealing of thiophene and selenophene molecules on the Si(100) surface by the core-level photoemission spectroscopy and near-edge X-ray absorption fine structure (NEXAFS). The core-level-spectra measured at different temperatures are consistently interpreted in terms of various adsorption structures suggested by theoretical calculations. In this study, we found the most suitable structures by theoretical and experimental results considering room temperature and mild thermal annealing.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.315-315
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• 2011

The ring formation and electronic properties of furan adsorbed on graphene layers grown on 6H-SiC(0001) has been investigated using atomic force microscopy (AFM), near edge X-ray absorption fine structure (NEXAFS) spectra for the C K-edge, and high resolution photoemission spectroscopy (HRPES). Moreover, we observed that furan molecules adsorbed on graphene could be used for chemical functionalization via the lone pair of electrons on the oxygen group, allowing chemical doping. We also found that furan spontaneously formed rings with one of three different bonding configurations and the electronic properties of the ring formed by furan on graphene can be described using by AFM, NEXAFS and HRPES, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.372-372
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• 2010

We have investigated adsorption of selenophene on Si(100) at room temperature using high resolution photoemission spectroscopy (HRPES) and near edge X-ray absorption fine structure (NEXAFS) in the partial electron yield (PEY) mode. The Si 2p, C 1s, Se 3d spectra of selenophene on Si(100) show that selenophene is nondissociatively chemisorbed on Si(100)-$2{\times}1$ through [2+2] cycloaddition. NEXAFS has been conducted to characterize the adsorption geometry of selenophene on Si(100). Since the $\pi^*$ orbital of C=C bond show good angular dependence in carbon K-edge NEXAFS spectra, the angle $53{\pm}5^{\circ}$ determined from NEXAFS spectra. This majority structure is consistent with the [2+2] cycloaddition of selenophene to the dimer of the Si(100)-$2{\times}1$ surface.