• 미래기술융합논문지
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• 제3권2호
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• pp.39-44
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• 2024

본 연구는 현대인의 스트레스로 인한 우울증, 불안, 불면증을 개선할 목적으로 천연 아로마 솔루션을 개발하고, 그 솔루션을 이용하여 물티슈에 응용하였다. 구체적으로, 소나무오일 솔루션는 한국산 소나무 오일과 블랙체리 오일를 혼합하여 제조하였다. 제조한 소나무 오일 솔루션에 대하여, 중금속 분석, 항균 분석, 심리 평가 및 피부 평가를 수행하고 스트레스 개선용 기능성 아로마 물티슈 제조 가능성을 검토하였다. 더나아가, 소나무오일 솔루션 물티슈의 피부 개선 여부를 조사한 결과, 보습 및 탄력 측면에서 개선의 효과가 있는 것으로 나타났다.

• 한국지구과학회지
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• 제35권6호
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• pp.401-411
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• 2014

Au 정광으로부터 Au Ag의 용출율을 향상시키기 위하여 기계적-화학적 활성화와 티오요소-티오시안산염 혼합용액을 적용하였다. 기계적-화학적 활성화를 이루기 위하여 정광 시료를 건식으로 그리고 습식으로 미분쇄하였다. 입도분포 분석과 XRD 분석 결과, 평균 입도 크기와 결정크기는 정광 시료보다 건식-시료에서 그리고 건식-시료보다 습식-시료에서 더 작게 나타났다. SEM과 XRD 분석 결과 기계적-화학적 활성화에 의해서 습식-시료에서 비정질화 현상이 관찰되었다. Au Ag에 대한 용출실험을 티오요소 용액, 티오시안산염 용액 그리고 티오요소-티오시안산염 혼합 용액으로 각각 수행하였다. Au Ag 용출율은 정광 시료보다 건식-시료에서 그리고 건식-시료보다 습식-시료에서 더 높게 나타났다. Au Ag는 티오요소 용액에서 보다 티오시안산염 용액에서 그리고 티오시안산염 용액에서보다 티오요소-티오시안산염 혼합 용액에서 더 높게 용출되었다. 습식-시료와 티오요소-티오시안산염 혼합 용액을 적용할 때 Au Ag가 99% 이상으로 용출되었다.

• Nuclear Engineering and Technology
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• 제55권6호
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• pp.2206-2214
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• 2023

The existing wet reconversion processes for the recovery of scraps generated in manufacturing of nuclear fuel are complex and require several unit operation steps. In this study, it is attempted to simplify the recovery process of high-quality fuel-grade UO₂ powder. A novel wet reconversion process for uranyl nitrate hexahydrate solution is suggested by using a newly developed pulsed fluidized bed reactor, and the resultant chemical characteristics are evaluated for the intermediate ammonium uranate hydrate product and subsequently converted UO₂ powder, as well as the compliance with nuclear fuel specifications and advantages over existing wet processes. The UO₂ powder obtained by the suggested process improved fuel pellet properties compared to those derived from the existing wet conversion processes. Powder performance tests revealed that the produced UO₂ powder satisfies all specifications required for fuel pellets, including the sintered density, increase in re-sintered density, and grain size. Therefore, the processes described herein can aid realizing a simplified manufacturing process for nuclear-grade UO₂ powders that can be used for nuclear power generation.

• Journal of information and communication convergence engineering
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• 제1권2호
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• pp.67-69
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• 2003

The experimental studies for the etch properties of the oxide grown on silicon substrate, which is in diluted hydrogen fluoride (HF) solution, are presented. Using different ion implantation dosages, dopants and energies, silicon substrate was implanted. The wet etching in diluted HF solution is used as a mean of wafer cleaning at various steps of VLSI processing. It is shown that the wet etch rate of oxide grown on various implanted silicon substrates is a strong function of ion implantation dopants, dosages and energies. This phenomenon has never been reported before. This paper shows that the difference of wet etch rate of oxide by ion implantation conditions is attributed to the kinds and volumes of dopants which was diffused out into $SiO_2$ from implanted silicon during thermal oxidation.

• 펄프종이기술
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• 제39권3호
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• pp.36-40
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• 2007

It has been problematic to repulp the dry broke treated with permanent wet strength agents like PAE, UF and MF. Solution type GPAM has the benefit of easy repulping but it has problems of cocross-linking and tends to gel. Therefore, the product concentration must be lower than 10% to reduce the gel generation problem. We developed emulsion type GPAM by an inverse emulsion technology to resolve both the repulping problem with permanent wet strength agents and the stability problem of GPAM solution products.

• 펄프종이기술
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• 제35권2호
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• pp.12-17
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• 2003

The effects of wet pressing and drying conditions on the disintegration and physical properties of paper were investigated in order to get the basic information on the resistance of paper for aqueous solution during converting processes. Wet pressing of unbeaten bleached softwood kraft pulp increased WRV at the range of grammage investigated. The increase of WRV with grammage at low wet pressing pressure(50 psi) was obvious, while it was not significant at higher wet pressing pressure(110 psi). The changes of WRV by drying were affected by the grammage and wet pressing pressure. The poorer disintegration of sheet, the higher wet pressing pressure and drying temperature. Although the strength properties were increased with the grammage, wet pressing pressure and drying temperature, results showed different trend from those of beaten pulp.

• 한국결정성장학회지
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• 제32권1호
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• pp.40-44
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• 2022

35 % 농도의 염산 용액을 이용하여 α-Ga₂O₃ epitaxy 박막의 습식 식각을 수행하였다. 35 % 염산 용액의 온도가 증가함에 따라 α-Ga₂O₃ epitaxy 박막의 식각 속도가 증가하였고, 본 연구에서 시도한 가장 높은 온도인 75℃에서 119.6 nm/min의 식각 속도를 나타내었다. 식각 반응의 활성화 에너지는 0.776 eV로 계산되었고, HCl 용액에서의 습식 식각은 reaction-limited 반응 기구에 의해 지배됨을 확인하였다. 각 온도에서 식각된 표면들의 AFM 분석결과 식각 용액의 온도가 증가함에 따라 식각된 표면의 표면조도가 증가함을 알 수 있었다.

• 한국전기전자재료학회논문지
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• 제15권2호
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• pp.105-109
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• 2002

The wet etching characteristics of magnetic materials such as NiFe and CoFe were investigated in terms of etch rate and etch profile by using variouus etching solutions (etchants). Among the various etching solutions, HNO$_3$, HCl, and H$_2$SO$_4$were selected for the etching of magnetic materials and showed distinct results. In the case of NiFe films, faster etch rate were obtained with HNO$_3$solution. When NiFe films ere etched with HCl solution, white etch residues were found on the surface of etched films. From FEAES analysis of these etch residues, they were proved to be by-product from the reaction of NiFe with Cl element. CoFe thin films showed the similar trend to the case of NiFe films. They were etched fast in HNO$_3$ solution while Chl solution represented slow etching. The etch profiles of CoFe films showed smooth etch profile but revealed the partial etching around the patterns in HNO$_3$solution of relatively high concentration. It was observed that the etched surface was clean and smooth, and that white etch residues were also remained on the etched films.

• Corrosion Science and Technology
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• 제3권6호
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• pp.251-256
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• 2004

Exposure of zinc samples in simulated acid rain solution (SARS) was investigated under a periodic wet-dry conditions using an AC impedance technique. The periodic wet and dry exposure consisted of the immersion of zinc samples in SARS for one hour followed by exposure to 7 hours drying at 60% RH. Phases of the corrosion products were indentified by X-ray diffraction (XRD). The influence of relative humdiity (RH), temperature, and surface inclination on the atmospheric corrosion of zinc is described. The reciprocal of polarization resistance (1/Rp) decreases rapidly during the initial stages then slowly and eventually attains a steady state as exposure time progresses. The average of reciprocal of polarization resistance per cycle, (ARPR) was calculated and found to decrease as number of exposure cycle increases. An increase of temperature enhances the corrsion rate of zinc. The values of ARPR, of a sample inclined at 30 o are lower than those for a sample oriented horizontally. The experiment result shows a pronounced dependence of reciprocal of polarization resistance on RH. Exposure in the presence of carbonate anions gives rise to more protective corrosion products than in nitrate anion solution. The corrosion mechanism during the initial stages of atmospheric zinc corrosion under wet-dry cyclic conditions is suggested.

• 반도체디스플레이기술학회지
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• 제19권2호
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• pp.77-81
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• 2020

Silicon wafer etching in micro electro mechanical systems (MEMS) fabrication is challenging to form 3-D structures. Well known Si-wet etch of silicon employs potassium hydroxide (KOH), tetramethylammonium hydroxide (TMAH) and sodium hydroxide (NaOH). However, the existing silicon wet etching process has a fatal disadvantage that etching of the back side of the wafer is hard to avoid. In this study, a wet etching bath for 150 mm wafers was designed to prevent back-side etching of silicon wafer, and we demonstrated the optimized process recipe to have anisotropic wet etching of silicon wafer without any damage on the backside. We also presented the design of wet bath for 300 mm wafer processing as a promising process development.