1 |
A. Achari, 'Transport mechanism in borophosphosilicate glass passivation', Electronics Manufacturing Technology Symposium (Nineteenth IEEE/CPMT), pp. 195-199, 1996
|
2 |
Ming-Tung Lee, P. Huang, May Chang and YiYueh Chen, 'A study of sub-atomospheric chemical vapor deposition (SACVD) 03-TEOS UGSm BPSG, PSG, and plasma enhanced chemical vapor deposition (PECVD) PSG film as sacrificial layers in a micro-fluid dispenser device', Semiconductor Manufacturing Technology Workshop, pp. 208-211, 2002
|
3 |
Lian jun Liu, Pey, K. L.and Pang dow Foo, 'HF wet etching of oxide after ion implantation', Electron Devices Meeting, IEEE Hong Kong, pp. 17-20, 1996
|
4 |
D. M. Brown and P. R. Kennicott, 'Glass Source B Diffusion in Si and ', J. Electrochem. Soc., vol. 118, pp. 293-300, 1971
DOI
|
5 |
D. J. Monk, D. S. Soane and R. T. Howe, 'Sacrificial layer wet etching for micromachining applications', Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on , 24-27, pp. 647~650, Jun 1991
|
6 |
W. Kern and R. C. Heim, 'Chemical Vapor Deposition of Silicate Glasses for Use with Silicon Devices', J. Electrchem. Soc., vol. 117, pp. 568-573, 1970
DOI
|