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http://dx.doi.org/10.6111/JKCGCT.2022.32.1.040

Wet etching of α-Ga2O3 epitaxy film using a HCl-based solution  

Choi, Byoung Su (Department of Nano Fusion Technology, Pusan National University)
Um, Ji Hun (RFHIC Corporation)
Eom, Hae Ji (Department of Nanomechatronics Engineering, Pusan National University)
Jeon, Dae-Woo (Korea Institute of Ceramic Engineering & Technology)
Hwang, Sungu (Department of Nanomechatronics Engineering, Pusan National University)
Kim, Jin Kon (Department of Nanomechatronics Engineering, Pusan National University)
Yun, Young Hoon (Department of New & Renewable Energy, Dongshin University)
Cho, Hyun (Department of Nanomechatronics Engineering, Pusan National University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.32, no.1, 2022 , pp. 40-44 More about this Journal
Abstract
Wet etching of α-Ga2O3 epitaxy film was performed using a 35 % hydrochloric (HCl) acid solution. As the temperature of the 35 % HCl solution increased, the α-Ga2O3 etch rate increased, and the etch rate of 119.6 nm/min was obtained at 75℃, the highest temperature examined in this work. The activation energy for etch reaction was determined to be 0.776 eV, and this suggests that the wet etching of α-Ga2O3 in the 35 % HCl solution was dominated by the reaction-limited mechanism. AFM analysis showed that the surface roughness of the etched surface increased as the temperature of the etchant solution increased.
Keywords
${\alpha}$-$Ga_2O_3$ epitaxy film; Wet etching; HCl solution; Etch rate; Surface roughness;
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