• Journal of the Korean Society of Manufacturing Process Engineers
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• v.13 no.4
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• pp.13-20
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• 2014

In this paper, the effects of a nonionic surfactant on the etch uniformity and the etch profile during the wet-etching process of high-purity aluminum were investigated for the fabrication of uniform micropattern arrays. To improve the surface roughness of a high-purity aluminum plate, a mechanical lapping process and an electrolytic polishing process were used. After electrolytic polishing process, the surface roughness, Ra, of the high-purity aluminum plate was improved from $1.25{\mu}m$ to $0.02{\mu}m$. A photoresist was used as an etching mask during the aluminum etching process, where the mixture of phosphoric acid, acetic acid, nitric acid, a nonionic surfactant and water was used as the aluminum etchant. Different amounts of the Triton X-100 nonionic surfactant were added to the aluminum etchant to investigate the effect of a nonionic surfactant during the wet-etching process of high-purity aluminum. The etch rate and the etch profile were measured by an optical interferometer and a scanning electron microscope.

• Journal of the Korean Electrochemical Society
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• v.11 no.2
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• pp.100-104
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• 2008

Titanium sheet metal substrates used in thin film batteries were wet etched and their surface area was increased in order to increase the discharge capacity and power density of the batteries. To obtain a homogeneous etching pattern, we used a conventional photolithographic process. Homogeneous hemisphere-shaped wells with a diameter of approximately $40\;{\mu}m$ were formed on the surface of the Ti substrate using a photo-etching process with a $20\;{\mu}m{\times}20\;{\mu}m$ square patterned photo mask. All-solid-state thin film cells composed of a Li/Lithium phosphorous oxynitride (Lipon)/$LiCoO_2$ system were fabricated onto the wet etched substrate using a physical vapor deposition method and their performances were compared with those of the cells on a bare substrate. It was found that the discharge capacity of the cells fabricated on wet etched Ti substrate increased by ca. 25% compared to that of the cell fabricated on bare one. High discharge rate was also able to be obtained through the reduction in the internal resistance. However, the cells fabricated on the wet etched substrate exhibited a higher degradation rate with charge-discharge cycling due to the nonuniform step coverage of the thin films, while the cells on the bare substrate demonstrated a good cycling performance.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1344-1348
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• 2003

It is generally known to be difficult to etch a surface of a transparent material such as fused silica by conventional laser ablation in which the surface is simply irradiated with a laser beam. A lot of studies have been done to provide a method capable of efficiently etching transparent materials without defects such as cracks. One of the promising methods or the micro-machining of optically transparent materials is laser induced etching. In this study, micro-drilling of fused silica by laser induced wet etching was conducted. KrF excimer and YAG laser were used as light sources. Acetone solution pyrene and ethanol solution of rhodamine were used as etchant.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.05a
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• pp.225-228
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• 2005

The purpose of this study is to investigate effects of the plastic/elastic deformation energy on wet etching characterization on the surface of material by using the nanoindentation and HF wet etching technique. Indents were made on the surface of Pyrex 7740 glass by the hyperfine indentation process with a Berkovich diamond indenter, and they were etched in $50\;wt\%$ HF solution. After etching process, convex structure was obtained due to the deformation-induced hillock phenomena. In this study, effects of indentation process parameters (normal load, loading rate) on the morphologies of the indented surfaces after isotopic etching were investigated from an angle of deformation energies.

• Applied Chemistry for Engineering
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• v.20 no.5
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• pp.557-560
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• 2009

In this study, a new wet etching method and the solution for thinning the glass with the thickness below $100{\mu}m$ were investigated. For the preparation of etching solution with low hydrofluoric acid, it was effective to use $NH_4F$ or $NH_4HF_2$ as a main ingredient with the addition of sulfuric acid or nitric acid. Influence of the composition of mixed acid solution and the temperature on the etching rate was investigated. The addition of anionic surfactant provides the function to prevent the adhesion of sludge generated by the etching reaction. A new wet etching pilot device equipped with streaming generation parts was used to test etching of commercial non-alkali glass and soda lime glass. The non-alkali glass with the thickness of 640 ${\mu}m$ and soda lime glass with the thickness of $500{\mu}m$ were etched to $45{\mu}m$ and $100{\mu}m$, respectively, by using the pilot device. After the etching by pilot device, the roughness degree of the glass surface was maintained at $0.01{\sim}0.02{\mu}m$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.1
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• pp.7-11
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• 2011

Sapphire substrate was patterned by a selective chemical wet etching technique, and GaN/InGaN structures were grown on this substrate by MOVPE (Metal Organic Vapor Phase Epitaxy). The surface of grown GaN on patterned sapphire substrate (PSS) has good morphology and uniformity. The patterned sapphire substrate LED showed better light output than conventional LED that improvement 50%. We think these results come from enhancement of internal quantum efficiency by decrease of threading dislocation and increase of light extraction efficiency. Also these LED showed more uniform emission distribution in angle than conventional LED.

• Electrical & Electronic Materials
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• v.10 no.8
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• pp.813-818
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• 1997

In this study the thin film air core and magnetic core inductors consisting of planar coil and/or CoNbZr amorphous magnetic layers on a Si substrate were fabricated as spiral type by using rf magnetron sputtering and wet etching methods. The etchant solution was achieved by iron chloride solution(17.5 mol%) mixed with HF (20 mol%) during 150 sec which etched Cu films and CoNbZr/Cu/CoNbZr multi-layer films. They were about 10${\mu}{\textrm}{m}$ of thickness and 10$\times$10 mm$^2$of size. The properties of thin film magnetic core inductor were 400 nH of Q value at 10 MHz and the resonance frequency was about 300 MHz.

• Journal of the Korean Electrochemical Society
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• v.14 no.4
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• pp.191-195
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• 2011

Wet chemical etching methods were utilized to conduct Si surface texturing, which could enhance photoelectrochemical hydrogen generation rate. Two different etching methods tested, which were anisotropic metal-catalyzed electroless etching and isotropic etching. The Si nano-texture that was fabricated by the anisotropic etching showed ~25% increase in photocurrent for H2 generation. The photocurrent enhancement was attributed to the reduced reflection loss at the nano-textured Si surface, which provided a layer of intermediate density between water and the Si substrate.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.4
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• pp.51-56
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• 2012

In order to fabricate through-Si-vias for thermal vias by using wet etching process, anisotropic etching behavior of Si substrate was investigated as functions of concentration and temperature of TMAH solution in this study. The etching rate of 5 wt%, 10 wt%, and 25 wt% TMAH solutions, of which temperature was maintained at $80^{\circ}C$, was $0.76{\mu}m/min$, $0.75{\mu}m/min$, and $0.30{\mu}m/min$, respectively. With changing the temperature of 10 wt% TMAH solution to $20^{\circ}C$ and $50^{\circ}C$, the etching rate was reduced to $0.067{\mu}m/min$ and $0.233{\mu}m/min$, respectively. Through-Si-vias of $500{\mu}m$-depth could be fabricated by etching a Si substrate for 5 hours in 10 wt% TMAH solution at $80^{\circ}C$ after forming same via-pattern on each side of the Si substrate.

• Journal of the Korean Vacuum Society
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• v.17 no.4
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• pp.353-358
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• 2008

In order to increase extraction efficiency of AlGaInP-based vertical RED LEDs, chemical wet etching technique was produced by using a roughened surface with triangle-like morphology. A commonly used $H_3PO_4$-based solution was applied for chemical wet etching. The light extraction of AlGaInP LED was related to the n-side roughed surface morphology. The morphology of roughed surface is analyzed by the atomic force microscope (AFM). As a result, the roughed surface AlGaInP LED has a root-mean-square (RMS) roughness of 44 nm. The brightness shows 41% increase after roughening n-side surface, as compared to the ordinary flat surface LED.