• 제목/요약/키워드: Wet etching

검색결과 469건 처리시간 0.021초

불규칙 패턴 에칭에 의한 표면 형상 제어와 광학적 특성 (Optical Property and Surface Morphology Control by Randomly Patterned Etching)

  • 김성수;이정우;전법주
    • 한국전기전자재료학회논문지
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    • 제30권12호
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    • pp.800-805
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    • 2017
  • Randomly patterned and wet chemical etching processes were used to treat anti-glare of display cover glasses. The surface and optical properties of grain size and surface morphology controlled by randomly patterned etching and wet chemical solution etching were investigated. The surface morphology and roughness of the etched samples were examined using a spectrophotometer and a portable surface roughness (Ra) measuring instrument, respectively. The gloss caused by reflection from the glass surface was measured at $60^{\circ}$ using a gloss meter. The surface of the sample etched by the doctor-blade process was more uniform than that obtained from a screen pattern etching process at gel state etching process of the first step. The surface roughness obtained from the randomly patterned etching process depended greatly on the mesh size, which in turn affected the grain size and pattern formation. The surface morphology and gloss obtained by the etching process in the second step depended primarily on the mesh size of the gel state etching process of the first step. In our experimental range, the gloss increased on decreasing the grain size at a lower mesh size for the first step process and for longer reaction times for the second step process.

DPSS UV Laser와 습식 식각을 이용한 금형강 미세 가공 (Micromachining for plastic mold steel using DPSS UV laser and wet etching)

  • 민경익;김재구;조성학;최두선;황경현
    • 한국레이저가공학회지
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    • 제12권3호
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    • pp.1-6
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    • 2009
  • This paper describes the method for the fabrication of micro dot array on a plastic mold steel using DPSS (diode pumped solid-states) UV laser and wet etching process. We suggest the process of the ablation of a photoresist (PR) coated on plastic mold steel and wet etching process using solutions of various concentrations of $FeCl_3$, $HNO_3$ in water as etchant. This method makes it possible to fabricate metallic roller mold because the microstructures are directly fabricated on the metal surface. In the range of operating conditions studied, $17\;{\mu}J$ laser pulse energy and 50 ms laser exposure time, an etchant containing 40wt% $FeCl_3$, 5wt% $HNO_3$ and etch time for 45 s gave the $10\;{\mu}m$ of micro dot pattern on plastic mold steel.

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초정밀 나노구조물 형성을 위한 새로운 KOH 습식각 기술 (A Novel KOH Wet Etching Technique for Ultrafine Nanostructure Formation)

  • 강찬민;박정호
    • 한국전기전자재료학회논문지
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    • 제24권2호
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    • pp.156-161
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    • 2011
  • The present study introduces a novel wet etching technique for nanostructure fabrications which usually requires low surface roughness. Using the current method, acquired profiles were smooth even in the nanoscale, which cannot be easily achieved with conventional wet or dry etching methods. As one of the most popular single crystal silicon etchant, potassium hydroxide (KOH) solution was used as a base solvent and two additives, antimony trioxide (Sb2O3) and ethyl alcohol were employed in. Four experimental parameters, concentrations of KOH, Sb2O3, and ethyl alcohol and temperature were optimized at 60 wt.%, 0.003 wt.%, 10 v/v%, and $23^{\circ}C$, respectively. Effects of additives in KOH solution were investigated on the profiles in both (110) and (111) planes of single crystal silicon wafer. The preliminary results show that additives play a critical role to decrease etch rate significantly down to ~2 nm/min resulting in smooth side wall profiles on (111) plane and enhanced surface roughness.

HF 습식 식각을 이용한 극자외선 노광 기술용 SiNx (Manufacturing SiNx Extreme Ultraviolet Pellicle with HF Wet Etching Process)

  • 김지은;김정환;홍성철;조한구;안진호
    • 반도체디스플레이기술학회지
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    • 제14권3호
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    • pp.7-11
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    • 2015
  • In order to protect the patterned mask from contamination during lithography process, pellicle has become a critical component for Extreme Ultraviolet (EUV) lithography technology. According to EUV pellicle requirements, the pellicle should have high EUV transmittance and robust mechanical property. In this study, silicon nitride, which is well-known for its remarkable mechanical property, was used as a pellicle membrane material to achieve high EUV transmittance. Since long silicon wet etching process time aggravates notching effect causing stress concentration on the edge or corner of etched structure, the remaining membrane is prone to fracture at the end of etch process. To overcome this notching effect and attain high transmittance, we began preparing a rather thick (200 nm) $SiN_x$ membrane which can be stably manufactured and was thinned into 43 nm thickness with HF wet etching process. The measured EUV transmittance shows similar values to the simulated result. Therefore, the result shows possibilities of HF thinning processes for $SiN_x$ EUV pellicle fabrication.

물중탕을 이용한 대면적 SiNx EUV 펠리클 제작 (Manufacturing Large-scale SiNx EUV Pellicle with Water Bath)

  • 김정환;홍성철;조한구;안진호
    • 반도체디스플레이기술학회지
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    • 제15권1호
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    • pp.17-21
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    • 2016
  • EUV (Extreme Ultraviolet) pellicle which protects a mask from contamination became a critical issue for the application of EUV lithography to high-volume manufacturing. However, researches of EUV pellicle are still delayed due to no typical manufacturing methods for large-scale EUV pellicle. In this study, EUV pellicle membrane manufacturing method using not only KOH (potassium hydroxide) wet etching process but also a water bath was suggested for uniform etchant temperature distribution. KOH wet etching rates according to KOH solution concentration and solution temperature were confirmed and proper etch condition was selected. After KOH wet etching condition was set, $5cm{\times}5cm$ SiNx (silicon nitride) pellicle membrane with 80% EUV transmittance was successfully manufactured. Transmittance results showed the feasibility of wet etching method with water bath as a large-scale EUV pellicle manufacturing method.

투명 전도성 산화물 전극으로의 응용을 위한 산화아연(ZnO) 코팅막의 습식 식각 특성연구 (Study on Wet chemical Etching Characterization of Zinc Oxide Film for Transparency Conductive Oxide Application)

  • 유동근;김명화;정성훈;부진효
    • 한국진공학회지
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    • 제17권1호
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    • pp.73-79
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    • 2008
  • 투명 전도성 산화물 전극(transparent conductive oxide electrodes)에 적용하기 위하여 RF 마그네트론 스퍼터링 방법에 의해 유리 기판 위에 산화아연 박막을 증착하였다. 투명 전극으로써 응용되기 위한 최적의 조건으로 기판온도를 상온으로 유지하고 RF power 200 W, 타겟과 기판사이의 거리(Dts)가 30 mm일 때 증착된 산화아연 박막으로부터 가장 낮은 비 저항값($7.4{\times}10^{-3}{\Omega}cm$)을 얻어 낼 수 있었으며, 85% 이상의 높은 투과율을 만족하는 박막을 얻을 수 있었다. 실질적인 소자로써의 응용을 위해 photo lithography를 통한 pattern을 형성, 습식 식각을 통하여 그 특성을 알아보고자 하였다. 습식 식각에서 사용된 식각용액(etchant)으로는 다양한 산 용액(황산, 옥살산, 인산)을 사용하였으며, 산의 농도 변화에 따른 식각특성과 식각시간 및 식각 이미지(표면형상)의 변화를 알아보았다. 결과적으로 산화아연의 습식식각은 산의 종류와 무관하게 산 용액의 농도(즉, pH)에 크게 의존하며, pH가 증가함에 따라 식각율이 지수함수적으로 감소하고 아울러 다양한 식각 이미지가 나타남을 최초로 고찰할 수 있었다.

유리기판 박막화를 위한 습식공정에서 식각액 성분의 영향 (Effects of Ingredients of Wet Etchant on Glass Slimming Process)

  • 신영식;이원규
    • Korean Chemical Engineering Research
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    • 제58권3호
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    • pp.474-479
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    • 2020
  • 유리기판의 박막화를 위한 식각액을 제조하였고, 습식 식각액의 주성분으로 HF를 사용하였다. HF를 기본으로 한 식각액에 HCl, HNO3, H2SO4와 같은 강산과 구연산과 같은 카르복실산 그리고 여러 종류의 아미노산을 첨가물로 각각 사용한 식각액으로 유리의 식각속도와 표면형상의 변화를 측정하였다. 강산의 종류와 상관없이 첨가량이 증가함에 따라 선형적으로 유리의 식각속도가 증가하였으며 유리표면의 슬러지 제거효과도 나타내었다. HCl이 함유된 식각액이 식각속도의 증가율과 슬러지 제거 효과에서 다른 강산보다 효율적인 결과를 보였다. 카르복실산의 첨가는 식각속도에 영향을 크게 주지 않으나 슬러지 제거효과를 보였다. 하지만 아미노산을 첨가한 경우에는 식각속도의 변화와 슬러지 제거 효과가 크지 않았다.

GaN의 습식 화학식각 특성 (Wet chemical etching of GaN)

  • 최용석;유순재;윤관기;이일형;이진구;임종수
    • 한국결정성장학회지
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    • 제8권2호
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    • pp.249-254
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    • 1998
  • GaN계 재료의 습식 화학식각 특성과 광 화학 및 전기 화학 및 전기 화학 습식식각 특성을 연구하였다. n형 GaN는 상온에서 NaOH 수용액에 식각되었으며 식각두께는 식각시간에 선형적으로 증가하였다. 또 광 조사 및 전기 화학을 가할 경우 식각율은 수배로 증가하였으며, 식각율은 $1{\times}10^{19};cm^{-3}$의 전자농도를 갖는 시료에서 광 조사시 최대 164${\AA}$/min을 얻었다. n-GaN의 식각율은 GaN의 전자농도에 크게 의존하는 특성을 나타내었으며 이러한 식각과정을 논의하였다. $SiO_2$ 박막으로 덮여진 100${\mu}m{\times}100{\mu}m$ 모양의 옆 식각면은 방향성을 갖지 않고 수직하였으며, 넓은 면적에서 매우 평탄하였다.

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CoNbZr/Cu/CoNbZr 다층막의 습식 식각 거동 (A Behavior of the Wet Etching of CoNbZr/Cu/CoNbZr Multi-Layer Films)

  • 김현식;이영생;송재성;오영두;윤재홍
    • E2M - 전기 전자와 첨단 소재
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    • 제10권7호
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    • pp.645-650
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    • 1997
  • We manufactured CoNbZr/Cu/CoNbZr multi-layer films by rf magnetron sputtering methods and formed the patterns on the deposited multi-layer films. In this study, we fabricated a new etchant for forming the patterns by the wet etching with etchant and we searched for the best etching conditions and the etchant composition. Cu was etched selectively independent on the concentration of iron chloride solution, but amorphous CoNbZr thin film did not. The etchant was achieved by iron chloride solution(17.5 mol%) mixed with HF (20 mol%) during 150 sec, which etched CoNbZr/Cu/CoNbZr multi-layer films at the same time. Also, the etchant etched CoNbZr/Cu/CoNbZr multi-layer films by the three-step. It was shown that the cross-section had the isotropic structure and excellent etching characteristics with the above etchant.

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Fabricating a Micro-Lens Array Using a Laser-Induced 3D Nanopattern Followed by Wet Etching and CO2 Laser Polishing

  • Seung-Sik Ham;Chang-Hwam Kim;Soo-Ho Choi;Jong-Hoon Lee;Ho Lee
    • 한국산업융합학회 논문집
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    • 제26권4_1호
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    • pp.517-527
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    • 2023
  • Many techniques have been proposed and investigated for microlens array manufacturing in three-dimensional (3D) structures. We present fabricating a microlens array using selective laser etching and a CO2 laser. The femtosecond laser was employed to produce multiple micro-cracks that comprise the predesigned 3D structure. Subsequently, the wet etching process with a KOH solution was used to produce the primary microlens array structures. To polish the nonoptical surface to the optical surface, we performed reflow postprocessing using a CO2 laser. We confirmed that the micro lens array can be manufactured in three primary shapes (cone, pyramid and hemisphere). Compared to our previous study, the processing time required for laser processing was reduced from approximately 1 hour to less than 30 seconds using the proposed processing method. Therefore, micro lens arrays can be manufactured using our processing method and can be applied to mass productionon large surface areas.