• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.11
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• pp.35-42
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• 2004

A CMOS folding ADC with transistor differential pair folding circuit for low power consumption and high speed operation is presented in this paper. This paper explains the theory of transistor differential pair folding technique and many advantages compared with conventional folding and interpolation circuits. A ADC based on transistor differential pair folding circuit uses 16 fine comparators and 32 interpolation resistors. So it is possible to achieve low power consumption, high speed operation and small chip size. Design technology is based on fully standard 0.25${\mu}{\textrm}{m}$ double poly 2 metal n-well CMOS process. A power consumption is 45mW at 2.5V applied voltage and 250MHz sampling frequency. The INL and DNL are within $\pm$0.15LSB and $\pm$0.15LSB respectively. The SNDR is approximately 50dB at 10MHz input frequency.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.11
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• pp.16-23
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• 2009

A 12b 10MS/s pipelined ADC with low DC gain amplifiers is presented. The pipelined ADC using a reference scaling technique is proposed to compensate the gain error in MDACs due to a low DC gain amplifier. To minimize the performance degradation of the ADC due to amplifier offset, the proposed offset trimming circuit is employed m the first-stage MDAC amplifier. Additional reset switches are used in all MDACs to reduce the memory effect caused by the low DC gain amplifier. The measured differential and integral non-linearities of the prototype ADC with 45dB DC gain amplifiers are less than 0.7LSB and 3.1LSB, respectively. The prototype ADC is fabricated in a $0.35{\mu}m$ CMOS process and achieves 62dB SNDR and 72dB SFDR with 2.4V supply and 10MHz sampling frequency while consuming 19mW power.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.5
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• pp.94-99
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• 2010

This paper presents a design procedure of digitally controlled oscillator(DCO) for power optimization. By controlling coarse tuning bits and fine tuning bits of DCO, the proposed design procedure can optimize the power dissipation and does not affect the LSB resolution, frequency range, linearity, portability. For optimization, the relationship between control bits and power dissipation of the DCO was analyzed. The DCO circuits using and unusing proposed design technique have been designed, simulated and proved using 0.13um, 1.2V CMOS library. The DCO circuit with proposed design technique has operation range between 283MHz and 1.1GHz and has 1.7ps LSB resolution and consumes 2.789mW at frequency of 1GHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.9
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• pp.685-691
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• 2003

This work describes a 3 V 12b 100 MS/s CMOS digital-to-analog converter (DAC) for high-speed communication system applications. The proposed DAC is composed of a unit current-cell matrix for 8 MSBs and a binary-weighted array for 4 LSBs, considering linearity, power consumption, chip area, and glitch energy. The low-glitch switch driving circuit is employed to improve the linearity and the dynamic performance. Current sources of the DAC are laid out separately from the current-cell switch matrix core. The prototype DAC is implemented in a 0.35 urn n-well single-poly quad-metal CMOS technology. The measured DNL and INL of the prototype DAC are within $\pm$0.75 LSB and $\pm$1.73 LSB, respectively, and the spurious-free dynamic range (SFDR) is 64 dB at 100 MS/s with a 10 MHz input sinewave. The DAC dissipates 91 mW at 3 V and occupies the active die area of 2.2 mm ${\times}$ 2.0 mm.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.12
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• pp.20-26
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• 1999

A CMOS 6-bit 100MSPS ADC for DBS receiver is designed. The proposed ADC is composed of folding block, latch block, and digital block. The cascode interpolating block and kickback reduced latch are proposed with a high speed architecture. To verify the performance of ADC, simulations are carried out by HSPICE. The ADC achieves a clock frequency of 100MHz with a power dissipation of 40mW for 3 V supply voltage. The active chip area is $1500{\mu}m{\times}1000{\mu}m$with $0.65{\mu}m$ 2-poly 2-metal CMOS process. Further, INL and DNL are within ${\pm}0.6LSB$, ${\pm}0.5LSB$, respectively. SNDR is about 33dB at 10MHz input frequency.

• Journal of Sensor Science and Technology
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• v.6 no.2
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• pp.137-144
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• 1997

In this paper, the design of a 10-bit 40-MS/s pipelined A/D converter is implemented to achieve low static power dissipation of 70 mW at the ${\pm}2.5\;V$ or +5 V power supply environment for high speed applications. A 1.5 b/stage pipeline architecture in the proposed ADC is used to allow large correction range for comparator offset and perform the fast interstage signal processing. According to necessity of high-performance op amps for design of the ADC, the new op amp with gain boosting based on a typical folded-cascode architecture is designed by using SAPICE that is an automatic design tool of op amps based on circuit simulation. A dynamic comparator with a capacitive reference voltage divider that consumes nearly no static power for this low power ADC was adopted. The ADC implemented using a $1.0{\mu}m$ n-well CMOS technology exhibits a DNL of ${\pm}0.6$ LSB, INL of +1/-0.75 LSB and SNDR of 56.3 dB for 9.97 MHz input while sampling at 40 MHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.10
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• pp.6-14
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• 2011

This paper presents the design of the battery sensor IC for instrumentation of current, voltage using delta-sigma ADC. The proposed circuit consists of programmable gain instrumentation amplifier (PGIA) and second-order discrete-time delta-sigma modulator with 1-bit quantization were fabricated by a 0.25 ${\mu}m$ CMOS technology. Design circuit show that the modulator achieves 82 dB signal-to-noise ratio (SNR) over a 2 kHz signal bandwidth with an oversampling ratio (OSR) of 256 and differential nonlinearity (DNL) of ${\pm}$ 0.3 LSB, integral nonlinearity (INL) of ${\pm}$ 0.5 LSB. Power consumption is 4.5 mW.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.10
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• pp.148-158
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• 2012

This paper presents the design of the incremental delta-sigma ADC. The proposed circuit consists of pre-amplifier, S & H circuit, MUX, delta-sigma modulator, and decimation filter. Third-order discrete-time delta-sigma modulator with 1-bit quantization were fabricated by a $0.18{\mu}m$ CMOS technology. The designed circuit show that the modulator achieves 87.8 dB signal-to-noise and distortion ratio (SNDR) over a 5 kHz signal bandwidth and differential nonlinearity (DNL) of ${\pm}0.25$ LSB, integral nonlinearity (INL) of ${\pm}0.2$ LSB. Power consumption of delta-sigma modulator is $941.6{\mu}W$. It was decided that N cycles are 200 clock for 16-bits output.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.10
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• pp.69-75
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• 2004

This work proposes an 8b 220 MS/s 230 mW 3-stage pipeline CMOS ADC with on-chip filers for temperature- and power- insensitive voltage references. The proposed RC low-pass filters improve switching noise performance and reduce reference settling time at heavy R & C loads without conventional off-chip large bypass capacitors. The prototype ABC fabricated in a 0.25 um CMOS occupies the active die area of 2.25 $\textrm{mm}^2$ and shows the measured DNL and INL of maximum 0.43 LSB and 0.82 LSB, respectively. The ADC maintains the SNDR of 43 dB and 41 dB up to the 110 MHz input at 200 MS/s and 220 MS/s, respectively, while the SNDR at the 500 MHz input is degraded as much as only 3 dB than the SNDR at the 110 MHz input.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.1
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• pp.56-63
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• 2008

This paper describes a 12 bit 1GS/s current mode segmented DAC for WCDMA communication. The proposed circuit in this paper employes segmented structure which consists of 4bit binary weighted structure in the LSB and 4bit thermometer decoder structure in the mSB and MSB. The proposed DAC uses delay time compensation circuits in order to suppress performance decline by delay time in segmented structure. The delay time compensation circuit comprises of phase frequency detector, charge pump, and control circuits, so that suppress delay time by binary weighted structure and thermometer decoder structure. The proposed DAC uses CMOS $0.18{\mu}m$ 1-poly 6-metal n-well process, and measured INL/DNL are below ${\pm}0.93LSB/{\pm}0.62LSB$. SFDR is approximately 60dB and SNDR is 51dB at 1MHz input frequency. Single DAC's power consumption is 46.2mW.