• Journal of the Institute of Electronics Engineers of Korea SD
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• 제48권3호
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• pp.34-41
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• 2011

This paper presents a wide tuning range, fine-resolution DCO (Digitally Controlled Oscillator) with an active inductor. In order to control the frequency of the DCO, the transconductance of the active inductor is tuned digitally. In addition, the DCO gain needs to be calibrated digitally to compensate for gain variations. To cover the wide tuning range, an automatic three-step coarse tuning scheme is proposed. The DCO total frequency tuning range is 1.4 GHz (2.1 GHz to 3.5 GHz), it is 58 % at 2.4 GHz. An effective frequency resolution is 0.14 kHz/LSB. The proposed DCO is implemented in 0.13 ${\mu}m$ CMOS process. The total power consumption is 6.6 mW from a 1.2 V supply voltage. The phase noise of the DCO output at 2.4 GHz is -120.67 dBc/Hz at 1 MHz offset.

• Journal of the Institute of Electronics Engineers of Korea SD
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• 제42권6호
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• pp.1-8
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• 2005

In this paper, CMOS A/D converter with 6bit 2GSPS Nyquist input at 1.8V is designed. In order to obtain the resolution of 6bit and the character of high-speed operation, we present an Interpolation type architecture. In order to overcome the problems of high speed operation, a novel One-zero Detecting Encoder, a circuit to reduce the Reference Fluctuation, an Averaging Resistor and a Track & Hold, a novel Buffered Reference for the improved SNR are proposed. The proposed ADC is based on 0.18um 1-poly 3-metal N-well CMOS technology, and it consumes 145mW at 1.8V power supply and occupies chip area of 977um $\times$ 1040um. Experimental result show that SNDR is 36.25 dB when sampling frequency is 2GHz and INL/DNL is $\pm$0.5LSB at static performance.

• Journal of the Institute of Electronics Engineers of Korea SD
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• 제45권10호
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• pp.45-52
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• 2008

We investigated the design of an RF-powered, wireless temperature sensor tag chip using $0.18-{\mu}m$ CMOS technology. The transponder generates its own power supply from small incident RF signal using Schottky diodes in voltage multiplier. Ambient temperature is measured using a new low-power temperature-to-voltage converter, and an 8-bit single-slope ADC converts the measured voltage to digital data. ASK demodulator and digital control are combined to identify unique transponder (ID) sent by base station for multi-transponder applications. The measurement of the temperature sensor tag chip showed a resolution of $0.64^{\circ}C/LSB$ in the range from $20^{\circ}C$ to $100^{\circ}C$, which is suitable for environmental temperature monitoring. The chip size is $1.1{\times}0.34mm^2$, and operates at clock frequency of 100 kHz while consuming $64{\mu}W$ power. The temperature sensor required a -11 dBm RF input power, supported a conversion rate of 12.5 k-samples/sec, and a maximum error of $0.5^{\circ}C$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• 제43권5호
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• pp.1-10
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• 2006

In this paper, an 1.8V 8-bit 500MSPS CMOS A/D Converter is proposed. In order to obtain the resolution of 8bits and high-speed operation, a Cascaded-Folding Cascaded-Interpolation type architecture is chosen. For the purpose of improving SNR, Cascaded-folding Cascaded-interpolation technique, distributed track and hold are included [1]. A novel folding circuit, a novel Digital Encoder, a circuit to reduce the Reference Fluctuation are proposed. The chip has been fabricated with a $0.18{\mu}m$ 1-poly 5-metal n-well CMOS technology. The effective chip area is $1050{\mu}m{\times}820{\mu}m$ and it dissipates about 146mW at 1.8V power supply. The INL and DNL are within ${\pm}1LSB$, respectively. The SNDR is about 43.72dB at 500MHz sampling frequency.

• Journal of the Institute of Electronics Engineers of Korea SD
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• 제43권6호
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• pp.53-61
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• 2006

In high speed flash type or pipelining type A/D Converter, the faster sampling frequency is, the more the effect of DC reference fluctuation is increased by clock feed-through and kick-back. When we measure A/D Converter, further, external noise increases reference voltage fluctuation. Thus reference fluctuation reduction circuit must be needed in high speed A/D converter. Conventional circuit simply uses capacitor but layout area is large and it's not efficient. In this paper, a reference fluctuation reduction circuit using transmission gate is proposed. In order to verify the proposed technique, we designed and manufactured 6bit 2GSPS CMOS A/D converter. The A/D converter is based on 0.18um 1-poly 5-metal N-well CMOS technology, and it consumes 145mW at 1.8V power supply. It occupies chip area of $977um\times1040um$. Experimental result shows that SNDR is 36.25 dB and INL/DNL ${\pm}0.5LSB$ when sampling frequency is 2GHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• 제40권11호
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• pp.83-94
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• 2003

In this paper. a highly linear and low glitch CMOS current mode digital-to-analog converter (DAC) by self calibration bias circuit is proposed. The architecture of the DAC is based on a current steering 6＋4 segmented type and new switching scheme for the current cell matrix, which reduced non-linearity error and graded error. In order to achieve a high performance DAC . novel current cell with a low spurious deglitching circuit and a new inverse thermometer decoder are proposed. The prototype DAC was implemented in a 0.35${\mu}{\textrm}{m}$ n-well CMOS technology. Experimental result show that SFDR is 60 ㏈ when sampling frequency is 32MHz and DAC output frequency is 7.92MHz. The DAC dissipates 46 mW at a 3.3 Volt single power supply and occupies a chip area of 1350${\mu}{\textrm}{m}$ ${\times}$750${\mu}{\textrm}{m}$.

• Journal of the Korea Institute of Information and Communication Engineering
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• 제19권1호
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• pp.149-155
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• 2015

This paper proposes 5-MS/s 10-bit digital-to-analog converter(DAC) with the improved linearity. The proposed DAC consists of a 10-bit R-2R-based DAC, an output buffer using a differential voltage amplifier with rail-to-rail input range, and a band-gap reference circuit for the bias voltage. The linearity of the 10-bit R-2R DAC is improved as the resistor of 2R is implemented by including the turn-on resistance of an inverter for a switch. The output voltage range of the DAC is determined to be $2/3{\times}VDD$ from an rail-to-rail output voltage range of the R-2R DAC using a differential voltage amplifier in the output buffer. The proposed DAC is implemented using a 1-poly 8-metal 130nm CMOS process with 1.2-V supply. The measured dynamic performance of the implemented DAC are the ENOB of 9.4 bit, SNDR of 58 dB, and SFDR of 63 dBc. The measured DNL and INL are less than +/-0.35 LSB. The area and power consumption of DAC are $642.9{\times}366.6{\mu}m^2$ and 2.95 mW, respectively.

• Journal of the Korean Institute of Telematics and Electronics C
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• 제35C권4호
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• pp.50-59
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• 1998

This paper describes a 3.3V 8bit CMOS digital to analog converter (DAC) with two state current cell metrix architecture which consists of a 4 MSB and a 4 LSB current matrix stage. The symmetric two stage current cell matrix architecture allow the designed DAC to reduce hot only a complexity of decoding logics, but also a number of wider swing cascode curent mirros. The designed DAC with an active chip area of 0.8 mm$_{2}$ is fabricated by a 0.8 .mu.m CMOS n-well standard digital process. The experimental data shows that the rise/fall time, the settling time, and INL/DNL are6ns, 15ns, and a less than .+-.0.8/.+-.0.75 LB, respectively. The designed DAC is fully operational for the power supply down to 2.0V, such that the DAC is suitable for a low voltage and a low power system application. The power dissipation of the DAC with a single power supply of 3.3V is measured to be 34.5mW.

• Proceedings of the Acoustical Society of Korea Conference
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• 한국음향학회 1999년도 학술발표대회 논문집 제18권 2호
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• pp.173-176
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• 1999

In this work, a A/D converter is implemented to obtain 8bit resolution at a conversion rate of 10Msample/s for video applications. Proposed architecture is designed low power A/D converter that pipelined architecture consists of flash A/D converter. This architecture consists of two identical stages that consist of sample/hold circuit, low power comparator, voltage reference circuit and MDAC of binary weighted capacitor array. Proposed A/D converter is designed using $0.25{\mu}m$ CMOS technology The SNR is 76.3dB at a sampling rate of 10MHz with 3.9MHz sine input signal. When an 8bit 10Msample/s A/D converter is simulated, the Differential Nonlinearity / Integral Nonlinearity (DNL/ INL) error are ${\pm}0.5/{\pm}2$ LSB, respectively. The power consumption is 13mW at 10Msample/s.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권5호
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• pp.473-481
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• 2013

A fractional folding analog-to-digital converter (ADC) with a novel arithmetic digital encoding technique is discussed. In order to reduce the asymmetry errors of the boundary conditions for the conventional folding ADC, a structure using an odd number of folding blocks and fractional folding rate is proposed. To implement the fractional technique, a new arithmetic digital encoding technique composed of a memory and an adder is described. Further, the coding errors generated by device mismatching and other external factors are minimized, since an iterating offset self-calibration technique is adopted with a digital error correction logic. A prototype 8-bit 1GS/s ADC has been fabricated using an 1.2V 0.13 um 1-poly 6-metal CMOS process. The effective chip area is $2.1mm^2$(ADC core : $1.4mm^2$, calibration engine : $0.7mm^2$), and the power consumption is 88 mW. The measured SNDR is 46.22 dB at the conversion rate of 1 GS/s. Both values of INL and DNL are within 1 LSB.