• Journal of Information Display
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• 제7권1호
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• pp.35-40
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• 2006

Organic light-emitting diode (OLED) display panel using the charge-pump (CP) pixel addressing scheme was fabricated, and the results show that it is applicable for information display. A CP-OLED panel with 64 ${\times}$ 64 pixels consisting of thin-film capacitors and amorphous silicon Schottky diodes was fabricated using conventional thin-film processes. The pixel drive circuit passes electrical current into the OLED cell during most of the frame period as in the thin-film transistor (TFT)-based active-matrix (AM) OLED displays. In this study, the panel was operated at a voltage level of below 4 V, and this operation voltage can be reduced by eliminating the overlap capacitance between the column bus line and the common electrode.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 E
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• pp.2167-2169
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• 1999

A pulse transformer producing pulses with the peak power of 200-MW (400 kV 500 A at load side with $4.4{\mu}s$ flat-top) is required to drive the 80-MW pulsed klystron in the PLS linac. We have designed and manufactured the high power pulse transformer with 1 : 17 turn ratio. Its primary functions are to match the impedance of klystron tube to the modulators, and to provide step-up of the voltage. To obtain a fast rise time of the pulse voltage. Low leakage inductance and low distributed capacitance design is very important. In this paper, we discuss the equivalent circuit analysis of the pulse transformer, and present the full power performance test results of pulse transformer.

• KIEE International Transactions on Electrophysics and Applications
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• 제4C권3호
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• pp.101-105
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• 2004

The efficient power MOSFET inverter applied for a simple and low cost power supply is proposed for driving the dielectric barrier discharge (DBD) lamp load. For decades, the DBD phenomenon has been used for ozone gas production in industry. In this research, the ultraviolet and visible light sources utilizing the DBD lamp is considered as the load for solid-state high frequency power supply. It is found that the simple voltage-source single-ended quasi-resonant ZVS inverter with only one active power switch could effectively drive this load with the output power up to 700 W. The pulse density modulation based control scheme for the single-ended quasi-resonant ZVS inverter using a low voltage and high current power MOSFET switching device is proposed to provide a linear power regulation characteristic in the wide range 0-100％ of the full power as compared with the conventional control based Royer type parallel resonant inverter type power supplies.

• Journal of Power Electronics
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• 제9권1호
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• pp.36-42
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• 2009

This paper presents a review of an improved high power-high frequency III-V wide bandgap (WBG) semiconductor device, Gallium Nitride (GaN). The device offers better efficiency and thermal management with higher switching frequency. By having higher blocking voltage, GaN can be used for high voltage applications. In addition, the weight and size of passive components on the printed circuit board can be reduced substantially when operating at high frequency. With proper management of thermal and gate drive design, the GaN power converter is expected to generate higher power density with lower stress compared to its counterparts, Silicon (Si) devices. The main contribution of this work is to provide additional information to young researchers in exploring new approaches based on the device's capability and characteristics in applications using the GaN power converter design.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.25-28
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• 2000

In this study, Transient Characteristics of the Punch-Through Insulated Gate Bipolar Transistor (PT-IGBT) has been studied. On the contraty to Non-Punch Through Insulated Gate Bipolar Transistor(NPT-IGBT), PT-IGBT has buffer layer It has a simple drive circuit controlled by the gate voltage of the MOSFET and the low on-state resistance of the bipolar junction transistor. In this paper, the transient characteristics with temperature of the PT-IGBT has been analyzed analytically. PT-IGBT is made to reduce switching power loss. Excess Minority carrier distribution inactive base region and base charge, the rate of voltage with time is expressed analytically to include buffer layer.

• Journal of Advanced Marine Engineering and Technology
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• 제40권7호
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• pp.635-641
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• 2016

엔진과 전기추진장치를 혼합한 하이브리드 추진 장치를 구동하기 위해서는 셀 단위로 이루어진 수십 개의 리튬계열의 배터리가 들어 있는 팩들로 접속이 된 전원을 사용한다. 따라서 많은 량의 배터리 셀의 상태를 언제든지, 엄격하게 관리할 필요가 있다. 일반적으로 배터리 관리(Battery management system, BMS)는 셀 전압, 전류 및 온도 등의 데이터를 운전 중에 받아서 상태를 컴퓨터로 모니터링 한다. 배터리의 상태를 확인하기 위한 또 다른 중요한 데이터는 배터리의 잔존수명(State of charge, SOH)을 알 수 있는 내부저항과 충전상태(State of charge, SOC)를 알 수 있는 무 부하 단자전압(Open circuit voltage, OCV)이 있다. 그러나 연속운전 중에는 내부 손실저항과 캐패시턴스의 병렬 등가회로로 인하여 내부저항의 측정이 어렵다. 또한 대부분의 에너지저장시스템에는 전압, 전류, 온도 등의 데이터를 이용하여 BMS가 수행되고 있지만, 운전 중에 예기치 않게 배터리 셀의 고장이 발생하는 경우에는 구동 전원장치의 출력전압이 변동하고, 하이브리드 자동차 또는 선박의 추진이 어려울 수가 있다. 본 논문에서는 리튬인산철 배터리 팩을 이용한 하이브리드 선박용 직류전원장치를 대상으로 배터리 셀의 돌발고장 순간에도 직류전원장치의 일정전압을 유지하면서 내부저항의 추정이 가능하고, 정상운전 중에는 OCV의 추정이 가능한 고 안전 BMS를 구현하고자 한다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 춘계학술대회 논문집 전기기기 및 에너지변환시스템부문
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• pp.125-127
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• 2008

기존의 LED(Light Emitting Diode)를 이용한 LCD(Liquid Crystal Display) 백라이트 유닛은 LED에 과전류가 흐르면 소자의 파손이 발생하고 무부하시 불필요한 전력소모가 발생하는 경우가 있어 보호회로가 필요하였다. 그래서 본 논문은 보호회로를 이용한 LCD 백라이트 유닛용의 LED 구동회로를 제안한다. 제안된 보호회로는 2가지로 첫 번째 보호회로는 무부하시 소비전력을 줄이는 보호회로 이다. 시뮬레이션 결과 무부하시 피드백 제어부 IC(Integrated Circuit)의 전원전압 $V_{cc}$를 UVLO(Under Voltage Lock Out)전압 이하로 강하시켰다. 그래서 무부하시 소비되는 전력을 줄일 수 있었다. 두번째 보호회로는 과전류시 보호회로 이다. 시뮬레이션 결과 과전류시 SCR이 온 되어 피드백 제어부 IC의 전원전압 $V_{cc}$를 UVLO전압 이하로 강하시켰다. 따라서 과전류시 LED 동회로 소자의 파손을 방지할 수 있는 장점이 있다.

• 조명전기설비학회논문지
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• 제27권10호
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• pp.15-20
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• 2013

In this paper, wireless power transfer system using the magnetic resonance was designed and applied to LED lighting for implementation of wireless lighting. This lighting was made by the converted DC driving type and the direct AC driving type. In the former, transferred AC power was rectified into DC and regulated to the specified voltage value, which leads to produce the loss at the rectifying and regulating circuit. In the latter, wireless-transferred AC power was directly applied to LED, which get rid of the loss derived from the additional circuit. For the efficiency-comparison between the former and the latter, the power at each stage was measured when the same optical output radiated from LED lighting part. The result revealed that the direct AC driving type had 18% higher efficiency than the DC driving type and confirmed that LED lighting using magnetic resonance wireless power transfer system can be efficient by direct AC power supply. And the direct AC driving type had the simple circuit structure and the simple LED lighting formation, so this can leads to various application.

• Journal of Advanced Marine Engineering and Technology
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• 제30권8호
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• pp.901-906
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• 2006

In this paper, the power amplifier using active bias circuits for LDMOS(Lateral Diffused Metal Oxide Semiconductor) MRF-21180 is designed and fabricated. According to change the temperature, the gate voltage of LDMOS is controlled by the fabricated active bias circuits which is made of PNP transistor to suppress drain current. The driving amplifier using MRF-21125 and MRF-21060 is made to drive the LDMOS MRF-21180 power amplifier. The variation of current consumption in the fabricated 60 watt power amplifier has an excellent characteristics of less than 0.1 A, whereas a passive biasing circuit dissipates more than 0.5 A. The implemented power amplifier has the gain over 9 dB, the gain flatness of less than $\pm$0.1 dB and input and output return loss of less than -6 dB over the frequency range 2.11 $\sim$ 2.17 GHz. The DC operation point of this power amplifier at temperature variation 0 $^{\circ}C$ to 60 $^{\circ}C$ is fixed by active bias circuit.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1998년도 Proceedings ICPE 98 1998 International Conference on Power Electronics
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• pp.143-148
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• 1998

The Design criteria of the auxiliary resonant snubber inverter (ARSI) using a load-side circuit are discussed in relation to electric propulsion drives. In this regard, this paper attempts to develop a set of design criteria for the ARSI. First, the switching characteristics of IGBTs under soft-switching mainly in terms of dv/dt/, di/dt and switching losses are discussed and utilized for optimizing the selection of the resonant components in the system. After that, the proper control strategies of ARSIs are analyzed and simulated based on voltage space vector modulations. Later, the design, control and implementation of the auxiliary resonant circuit suitable for industrial products are analyzed and presented. And finally, other factors including power stage layout, packaging and the choice of current sensors are included. The detailed simulation and experimental results will be included based on a laboratory prototype. The proposed design criteria of the ARSI would help the implementation of an electric propulsion drive system.