Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2000.07a
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- Pages.25-28
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- 2000
Transient Analysis of PT-IGBT with Different Temperature
PT-IGBT의 온도에 따른 과도특성해석
Abstract
In this study, Transient Characteristics of the Punch-Through Insulated Gate Bipolar Transistor (PT-IGBT) has been studied. On the contraty to Non-Punch Through Insulated Gate Bipolar Transistor(NPT-IGBT), PT-IGBT has buffer layer It has a simple drive circuit controlled by the gate voltage of the MOSFET and the low on-state resistance of the bipolar junction transistor. In this paper, the transient characteristics with temperature of the PT-IGBT has been analyzed analytically. PT-IGBT is made to reduce switching power loss. Excess Minority carrier distribution inactive base region and base charge, the rate of voltage with time is expressed analytically to include buffer layer.