• Journal of Information Display
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• v.7 no.1
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• pp.35-40
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• 2006

Organic light-emitting diode (OLED) display panel using the charge-pump (CP) pixel addressing scheme was fabricated, and the results show that it is applicable for information display. A CP-OLED panel with 64 ${\times}$ 64 pixels consisting of thin-film capacitors and amorphous silicon Schottky diodes was fabricated using conventional thin-film processes. The pixel drive circuit passes electrical current into the OLED cell during most of the frame period as in the thin-film transistor (TFT)-based active-matrix (AM) OLED displays. In this study, the panel was operated at a voltage level of below 4 V, and this operation voltage can be reduced by eliminating the overlap capacitance between the column bus line and the common electrode.

• Proceedings of the KIEE Conference
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• 1999.07e
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• pp.2167-2169
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• 1999

A pulse transformer producing pulses with the peak power of 200-MW (400 kV 500 A at load side with $4.4{\mu}s$ flat-top) is required to drive the 80-MW pulsed klystron in the PLS linac. We have designed and manufactured the high power pulse transformer with 1 : 17 turn ratio. Its primary functions are to match the impedance of klystron tube to the modulators, and to provide step-up of the voltage. To obtain a fast rise time of the pulse voltage. Low leakage inductance and low distributed capacitance design is very important. In this paper, we discuss the equivalent circuit analysis of the pulse transformer, and present the full power performance test results of pulse transformer.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.3
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• pp.101-105
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• 2004

The efficient power MOSFET inverter applied for a simple and low cost power supply is proposed for driving the dielectric barrier discharge (DBD) lamp load. For decades, the DBD phenomenon has been used for ozone gas production in industry. In this research, the ultraviolet and visible light sources utilizing the DBD lamp is considered as the load for solid-state high frequency power supply. It is found that the simple voltage-source single-ended quasi-resonant ZVS inverter with only one active power switch could effectively drive this load with the output power up to 700 W. The pulse density modulation based control scheme for the single-ended quasi-resonant ZVS inverter using a low voltage and high current power MOSFET switching device is proposed to provide a linear power regulation characteristic in the wide range 0-100％ of the full power as compared with the conventional control based Royer type parallel resonant inverter type power supplies.

• Journal of Power Electronics
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• v.9 no.1
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• pp.36-42
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• 2009

This paper presents a review of an improved high power-high frequency III-V wide bandgap (WBG) semiconductor device, Gallium Nitride (GaN). The device offers better efficiency and thermal management with higher switching frequency. By having higher blocking voltage, GaN can be used for high voltage applications. In addition, the weight and size of passive components on the printed circuit board can be reduced substantially when operating at high frequency. With proper management of thermal and gate drive design, the GaN power converter is expected to generate higher power density with lower stress compared to its counterparts, Silicon (Si) devices. The main contribution of this work is to provide additional information to young researchers in exploring new approaches based on the device's capability and characteristics in applications using the GaN power converter design.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.25-28
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• 2000

In this study, Transient Characteristics of the Punch-Through Insulated Gate Bipolar Transistor (PT-IGBT) has been studied. On the contraty to Non-Punch Through Insulated Gate Bipolar Transistor(NPT-IGBT), PT-IGBT has buffer layer It has a simple drive circuit controlled by the gate voltage of the MOSFET and the low on-state resistance of the bipolar junction transistor. In this paper, the transient characteristics with temperature of the PT-IGBT has been analyzed analytically. PT-IGBT is made to reduce switching power loss. Excess Minority carrier distribution inactive base region and base charge, the rate of voltage with time is expressed analytically to include buffer layer.

• Journal of Advanced Marine Engineering and Technology
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• v.40 no.7
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• pp.635-641
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• 2016

In order to drive a hybrid propulsion device which combines an engine and an electric propulsion unit, battery packs that contain dozens of unit cells consisting of a lithium-based battery are used to maintain the power source. Therefore, it is necessary to more strictly manage a number of battery cells at any given time. In order to manage battery cells, generally voltage, current, and temperature data under load condition are monitored from a personal computer. Other important elements required to analyze the condition of the battery are the internal resistances that are used to judge its state-of-health (SOH) and the open-circuit voltage (OCV) that is used to check the battery charging state. However, in principle, the internal resistances cannot be measured during operation because the parallel equivalent circuit is composed of internal loss resistances and capacitance. In most energy storage systems, battery management system (BMS) operations are carried out by using data such as voltage, current, and temperature. However, during operation, in the case of unexpected battery cell failure, the output voltage of the power supply can be changed and propulsion of the hybrid vehicle and vessel can be difficult. This paper covers the implementation of a high safety battery management system (HSBMS) that can estimate the OCV while the device is being driven. If a battery cell fails unexpectedly, a DC power supply with lithium iron phosphate can keep providing the load with a constant output voltage using the remainder of the batteries, and it is also possible to estimate the internal resistance.

• Proceedings of the KIEE Conference
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• 2008.04c
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• pp.125-127
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• 2008

기존의 LED(Light Emitting Diode)를 이용한 LCD(Liquid Crystal Display) 백라이트 유닛은 LED에 과전류가 흐르면 소자의 파손이 발생하고 무부하시 불필요한 전력소모가 발생하는 경우가 있어 보호회로가 필요하였다. 그래서 본 논문은 보호회로를 이용한 LCD 백라이트 유닛용의 LED 구동회로를 제안한다. 제안된 보호회로는 2가지로 첫 번째 보호회로는 무부하시 소비전력을 줄이는 보호회로 이다. 시뮬레이션 결과 무부하시 피드백 제어부 IC(Integrated Circuit)의 전원전압 $V_{cc}$를 UVLO(Under Voltage Lock Out)전압 이하로 강하시켰다. 그래서 무부하시 소비되는 전력을 줄일 수 있었다. 두번째 보호회로는 과전류시 보호회로 이다. 시뮬레이션 결과 과전류시 SCR이 온 되어 피드백 제어부 IC의 전원전압 $V_{cc}$를 UVLO전압 이하로 강하시켰다. 따라서 과전류시 LED 동회로 소자의 파손을 방지할 수 있는 장점이 있다.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.27 no.10
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• pp.15-20
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• 2013

In this paper, wireless power transfer system using the magnetic resonance was designed and applied to LED lighting for implementation of wireless lighting. This lighting was made by the converted DC driving type and the direct AC driving type. In the former, transferred AC power was rectified into DC and regulated to the specified voltage value, which leads to produce the loss at the rectifying and regulating circuit. In the latter, wireless-transferred AC power was directly applied to LED, which get rid of the loss derived from the additional circuit. For the efficiency-comparison between the former and the latter, the power at each stage was measured when the same optical output radiated from LED lighting part. The result revealed that the direct AC driving type had 18% higher efficiency than the DC driving type and confirmed that LED lighting using magnetic resonance wireless power transfer system can be efficient by direct AC power supply. And the direct AC driving type had the simple circuit structure and the simple LED lighting formation, so this can leads to various application.

• Journal of Advanced Marine Engineering and Technology
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• v.30 no.8
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• pp.901-906
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• 2006

In this paper, the power amplifier using active bias circuits for LDMOS(Lateral Diffused Metal Oxide Semiconductor) MRF-21180 is designed and fabricated. According to change the temperature, the gate voltage of LDMOS is controlled by the fabricated active bias circuits which is made of PNP transistor to suppress drain current. The driving amplifier using MRF-21125 and MRF-21060 is made to drive the LDMOS MRF-21180 power amplifier. The variation of current consumption in the fabricated 60 watt power amplifier has an excellent characteristics of less than 0.1 A, whereas a passive biasing circuit dissipates more than 0.5 A. The implemented power amplifier has the gain over 9 dB, the gain flatness of less than $\pm$0.1 dB and input and output return loss of less than -6 dB over the frequency range 2.11 $\sim$ 2.17 GHz. The DC operation point of this power amplifier at temperature variation 0 $^{\circ}C$ to 60 $^{\circ}C$ is fixed by active bias circuit.

• Proceedings of the KIPE Conference
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• 1998.10a
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• pp.143-148
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• 1998

The Design criteria of the auxiliary resonant snubber inverter (ARSI) using a load-side circuit are discussed in relation to electric propulsion drives. In this regard, this paper attempts to develop a set of design criteria for the ARSI. First, the switching characteristics of IGBTs under soft-switching mainly in terms of dv/dt/, di/dt and switching losses are discussed and utilized for optimizing the selection of the resonant components in the system. After that, the proper control strategies of ARSIs are analyzed and simulated based on voltage space vector modulations. Later, the design, control and implementation of the auxiliary resonant circuit suitable for industrial products are analyzed and presented. And finally, other factors including power stage layout, packaging and the choice of current sensors are included. The detailed simulation and experimental results will be included based on a laboratory prototype. The proposed design criteria of the ARSI would help the implementation of an electric propulsion drive system.