• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.80-81
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• 2005

Chalcogenide phase change memory has high performance to be next generation memory, because it is a nonvolatile memory processing high programming speed, low programming voltage, high sensing margin, low consumption and long cycle duration. We have developed a sample of PRAM with thermal protected layer. We have investigated the phase transition behaviors in function of process factor including thermal protect layer. As a result, we have observed that set voltage and duration of protect layer are more improved than no protect layer.

• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.61-67
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• 2020

This paper is to propose a hybrid memory adaptor using next-generation nonvolatile memory devices such as phase-change memory to improve the performance limitations of OpenStack-based object storage systems. The proposed system aims to improve the performance of the account and container servers for object metadata management. For this, the proposed system consists of locality-based dynamic page buffer, write buffer, and nonvolatile memory modules. Experimental results show that the proposed system improves the hit rate by 5.5% compared to the conventional system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.124-125
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• 2008

The charge trapping and tunnelling characteristics with various thickness of $Si_3N_4$ layer were investigated for application of TBE (Tunnel Barrier Engineered) non-volatile memory. We confirmed that the critical thickness of no charge trapping was existed with decreasing $Si_3N_4$ thickness. Also, the charge trap centroid x and charge trap density were extracted by using CCS (Constant Current Stress) method. Through the optimized thickness of $Si_3N_4$ layer, it can be improve the performance of non-volatile memory.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.2
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• pp.87-89
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• 2006

This paper proposes a sense amplifier with non-volatile memory in order to improve the image quality of LCD by enhancing the matching of the driving voltages between the panel and driver. The sense amplifier having a wide sensing margin and fast response adjusts LCD driver voltage of display driver. The CSTN-LCD with the sense amplifier results improved image quality than that with conventional 6 bit column driver without it.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.128-129
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• 2005

In this research, non-volatile memory effects and nano-crystal creation have been investigated in SiNx containing Si nano-crystals (Si-nc) produced by ICP-CVD and rapid thermal annealing. The quantum dots were created during rapid thermal annealing of Si-rich SiNx thin films. The quantum dot creation was analyzed with photoluminescence spectra, and in case of Si-rich SiNx, it is conformed that the quantum dots are formed easily at 750$\sim$800nm wavelength.

• Proceedings of the Korean Society of Computer Information Conference
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• 2017.07a
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• pp.131-132
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• 2017

본 연구에서는 열처리 온도에 따른 전도 특성을 조사하기 위하여 RF magnetron sputtering을 이용해서 Si기판 위에 SBN 박막을 증착시킨 후, SBN 박막에 $650{\sim}800[^{\circ}C]$의 온도 범위에서 열처리를 하였다. $650[^{\circ}C]$에서 열처리된 박막의 경우 표면 거칠기는 약 0.42[nm]로 나타났으며, -5~+5[V]의 전압 범위에서 누설전류밀도는 $10-5[A/cm^2]$ 이하로 안정된 값을 나타내었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.60-61
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• 2007

In this paper, the p-channel poly Si thin-film transistors (Poly-Si TFT's) using formed by solid phase crystallization (SPC) on glass substrate were fabricated. And we propose an ONO(Oxide-Nitride-Oxide) multilayer as the gate insulator for poly-Si TFT's to indicate non-volatile memory (NVM) effect. Poly-Si TFT is investigated by measuring the electrical properties of poly-Si films, such as I-V characteristics, on/off current ratio. NVM characteristics is showed by measuring the threshold voltage change of TFT through I-V characteristics.

• Journal of Information Technology Services
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• v.18 no.1
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• pp.79-90
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• 2019

Maximizing energy efficiency minimizes the energy consumption of computation, storage and communications required for IT services, resulting in economic and environmental benefits. Recent advancement of flash and next generation non-volatile memory technology and price decrease of those memories have led to the rise of so-called AFA (All-Flash Array) storage devices made of flash or next generation non-volatile memory. Currently, the AFA devices are rapidly replacing traditional storages in the high-performance servers due to their fast input/output characteristics. However, it is not well known how effective the energy efficiency of the AFA devices in the real world. This paper shows input/output performance and power consumption of the AFA devices measured on the Linux XFS file system via experiments and discusses energy efficiency of the AFA devices in the real world.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1284-1287
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• 2007

Titanium dioxide ($TiO_2$) is promising candidate for fabricating blocking layer of gate dielectrics in non-volatile memory (NVM). In this work, we investigated $TiO_2$ as high dielectric constant material instead of silicon dioxide ($SiO_2$), which is generally used as blocking layer for NVM.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.127-128
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• 2008

The electrical characteristics of VARIOT (variable oxide thickness) with various $HfO_2$ thicknesses on thin $SiO_2$ or $Al_2O_3$ layer were investigated. Especially, the charge trapping characteristics of $HfO_2$ layer were intensively studied. The thin $HfO_2$ layer has small charge trapping characteristics while the thick $HfO_2$ layer has large memory window. Therefore, the $HfO_2$ layer is superior material and can be applied to charge storage as well as tunneling barrier of the non-volatile memory applications.