Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A study on characteristics of crystallization according to changes of top structure with phase change memory cell of $Ge_2Sb_2Te_5$

$Ge_2Sb_2Te_5$ 상변화 소자의 상부구조 변화에 따른 결정화 특성 연구

  • Lee, Jae-Min (Department of Electronic Materials Engineering, Kwangwoon Univ.) ;
  • Shin, Kyung (Department of Electronic Materials Engineering, Kwangwoon Univ.) ;
  • Choi, Hyuck (Department of Electronic Materials Engineering, Kwangwoon Univ.) ;
  • Chung, Hong-Bay (Department of Electronic Materials Engineering, Kwangwoon Univ.)
  • 이재민 (전자재료공학과 광운대학교) ;
  • 신경 (전자재료공학과 광운대학교) ;
  • 최혁 (전자재료공학과 광운대학교) ;
  • 정홍배 (전자재료공학과 광운대학교)
  • Published : 2005.11.10
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Abstract

Chalcogenide phase change memory has high performance to be next generation memory, because it is a nonvolatile memory processing high programming speed, low programming voltage, high sensing margin, low consumption and long cycle duration. We have developed a sample of PRAM with thermal protected layer. We have investigated the phase transition behaviors in function of process factor including thermal protect layer. As a result, we have observed that set voltage and duration of protect layer are more improved than no protect layer.

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