• IEMEK Journal of Embedded Systems and Applications
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• v.12 no.3
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• pp.177-184
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• 2017

High performance non-volatile memory system can mitigate the gap between main memory and storage. However, no single memory devices fulfill the requirements. Non-volatile Dual In-line Memory Module (NVDIMM) consisted of DRAMs and NAND Flashes has been proposed to achieve the performance and non-volatility simultaneously. When power outage occurs, data in DRAM is backed up into NAND Flash using a small-size external energy storage such as a supercapacitor. Backup and restore operations of NVDIMM do not cooperate with the operating system in the NVDIMM standard, thus there is room to optimize its operation. This paper analysis the operation of NVDIMM and proposes a method to reduce backup and restore time. Particularly, data compression is introduced to reduce the amount of data that to be backed up and restored. The simulation results show that the proposed method reduces up to 72.6% of backup and restore time.

• IEIE Transactions on Smart Processing and Computing
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• v.2 no.4
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• pp.226-239
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• 2013

A number of systems have several on-chip memories with cache memory being one of them. Conventional cache memory consists of SRAM but the ratio of static energy to the total energy of the memory architecture becomes larger as the leakage power of traditional SRAM increases. Spin-Torque Transfer RAM (STT-RAM), which is a variety of Non-Volatile Memory (NVM), has many advantages over SRAM, such as high density, low leakage power, and non-volatility, but it consumes too much writing energy. This study evaluated a wide range of energy consumptions of a two-level cache using NVM partially on a mobile processor. Through a number of experimental evaluations, it was confirmed that the use of NVM partially in the two-level cache effectively reduces energy consumption significantly.

• International journal of advanced smart convergence
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• v.12 no.1
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• pp.76-81
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• 2023

Journaling file systems are widely used to keep file systems in a consistent state against crash situations. As traditional journaling file systems are designed for block I/O devices like hard disks, they are not efficient for emerging byte-addressable NVM (non-volatile memory) media. In this article, we present a new in-memory journaling file system for NVM that is different from traditional journaling file systems in two respects. First, our file system journals only modified portions of metadata instead of whole blocks based on the byte-addressable I/O feature of NVM. Second, our file system bypasses the heavy software I/O stack while journaling by making use of an in-memory file system interface. Measurement studies using the IOzone benchmark show that the proposed file system performs 64.7% better than Ext4 on average.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.4
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• pp.514-523
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• 2017

In this paper, we propose Adaptive Writeback-aware Cache management (AWC) to prolong the lifetime of non-volatile main memory systems by reducing the number of writebacks. The last-level cache in AWC is partitioned into Least Recently Used (LRU) segment and LRU using Dirty block Precedence (DP-LRU) segment. The DP-LRU segment evicts clean blocks first for giving reuse opportunity to dirty blocks. AWC can also determine the efficient size of DP-LRU segment for reducing the number of writebacks according to memory access patterns of programs. In the performance evaluation, we showed that AWC reduced the number of writebacks up to 29% and 46%, and saved the energy of a main memory system up to 23% and 49% in a single-core and multi-core, respectively. AWC also reduced the runtime by 1.5% and 3.2% on average compared to previous cache managements for non-volatile main memory systems, in a single-core and a multi-core, respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.51-65
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• 2008

The article presents the recent research development in polymer ferroelectric non-volatile memory. A brief overview is given of the history of ferroelectric memory and device architectures based on inorganic ferroelectric materials. Particular emphasis is made on device elements such as metal/ferroelectric/metal type capacitor, metal-ferroelectric-insulator-semiconductor (MFIS) and ferroelectric field effect transistor (FeFET) with ferroelectric poly(vinylidene fluoride) (PVDF) and its copolymers with trifluoroethylene (TrFE). In addition, various material and process issues for realization of polymer ferroelectric non-volatile memory are discussed, including the control of crystal polymorphs, film thickness, crystallization and crystal orientation and the unconventional patterning techniques.

• Journal of the Semiconductor & Display Technology
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• v.21 no.4
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• pp.86-91
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• 2022

Cache bypassing is a scheme to prevent unnecessary cache blocks from occupying the capacity of the cache for avoiding cache contamination. This method is introduced to alleviate the problems of non-volatile memories (NVMs)-based memory system. However, the prior works have been studied without considering wear-out attack. Malicious writing to a small area in NVMs leads to the failure of the system due to the limited write endurance of NVMs. This paper proposes a novel scheme to prolong the lifetime with higher resistance for the wear-out attack. First, the memory reference pattern is found by modified reuse distance calculation for each cache block. If a cache block is determined as the target of the attack, it is forwarded to higher level cache or main memory without updating the NVM-based cache. The experimental results show that the write endurance is improved by 14% on average and 36% on maximum.

• IEMEK Journal of Embedded Systems and Applications
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• v.13 no.3
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• pp.125-131
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• 2018

STT-RAM is attracting as a next generation Non-volatile memory for replacing cache memory with low leakage energy, high integration and memory access performance similar to SRAM. However, there is problem of write operations as the other Non_volatile memory. Hybrid cache memory using SRAM and STT-RAM is attracting attention as a cache memory structure with lowe power consumption. Despite this, reducing the leakage energy consumption by the STT-RAM is still lacking access to the Dynamic energy. In this paper, we proposed as energy management method such as a way-selection approach for hybrid L2 cache fo SRAM and STT-RAM and memory selection method of write/read operation. According to the simulation results, the proposed hybrid cache memory reduced the average energy consumption by 40% on SPEC CPU 2006, compared with SRAM cache memory.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.21 no.6
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• pp.65-70
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• 2021

Recently, as the number of mobile apps rapidly increases, the memory size of smartphones keeps increasing. Smartphone memory consists of DRAM and as it is a volatile medium, continuous refresh operations for all cells should be performed to maintain the contents. Thus, the power consumption of memory increases in proportion to the DRAM size of the system. There are attempts to configure the memory system with low-power non-volatile memory instead of DRAM to reduce the power consumption of smartphones. However, non-volatile memory has weaknesses in write operations, so analysis of write behaviors is a prerequisite to realize this in practical systems. In this paper, we extract memory reference traces of mobile apps and analyze their characteristics specially focusing on write operations. The results of this paper will be helpful in the design of memory management systems consisting of non-volatile memory in future smartphones.

• Journal of Information Processing Systems
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• v.15 no.1
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• pp.151-158
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• 2019

With the recent advances of memory technologies, high-performance non-volatile memories such as non-volatile dual in-line memory module (NVDIMM) have begun to be used as an addition or an alternative to server-side storages. When these memory bus-connected storages (MBSs) are installed over non-uniform memory access (NUMA) servers, the distance between NUMA nodes and MBSs is one of the crucial factors that influence file processing performance, because the access latency of a NUMA system varies depending on its distance from the NUMA nodes. This paper presents the design and implementation of a high-performance logical volume manager for MBSs, called MBS-LVM, when multiple MBSs are scattered over a NUMA server. The MBS-LVM consolidates the address space of each MBS into a single global address space and dynamically utilizes storage spaces such that each thread can access an MBS with the lowest latency possible. We implemented the MBS-LVM in the Linux kernel and evaluated its performance by porting it over the tmpfs, a memory-based file system widely used in Linux. The results of the benchmarking show that the write performance of the tmpfs using MBS-LVM has been improved by up to twenty times against the original tmpfs over a NUMA server with four nodes.

• Proceedings of the Korean Society of Computer Information Conference
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• 2013.01a
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• pp.195-196
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• 2013

본 논문에서는 NVRAM(Non-volatile Random Access Memory) 주 기억장치를 위한 메모리 컨트롤러를 설계한다. NVRAM의 비 휘발성과 낮은 정적 에너지 소모의 장점을 활용하는 한편, 상대적으로 느린 읽기/쓰기 속도 및 큰 쓰기 전력 소모를 개선하기 위해 새로운 캐시 구조를 제안한다. FPGA를 활용하여 Block RAM 128KB 1차 캐시, 16KB 2차 캐시 및 캐시 컨트롤러를 포함하는 메모리 컨트롤러를 구현하였고 NVRAM은 FeRAM를 사용하였다.