• Title/Summary/Keyword: Via etching

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Regarding metallic structure of iron relics of Chosun Dynasty excavated at Gangsun-tower, Chengpyeong Temple (청평사 강선루 출토 조선시대 철제유물의 금속조직에 대하여)

  • Kim, Soo-ki
    • 한국문화재보존과학회:학술대회논문집
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    • 2004.10a
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    • pp.43-54
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    • 2004
  • In the course of examining the metallic structure of Iron chisel and Iron arrowhead, a relics of the 16th or 17th of Chosun Dynasty unearthed at near Gangsun-tower, Chengpyeong temple, we collected un-eroded samples from the relics and looked into the metallic structure through mounting, grinding and polishing, and etching, while analyzing non-metallic inclusion via SEM and EDS. The research metallic structure and SEM-SDS analysis, found that Iron chisel and Iron arrowhead had been produced from sponge iron close to pure Iron made by solid low heat reducing and then increased in rate of carbon by carburizing, It also found that Iron chisel had been hardened through the repetitive process of quench hardening and heat treatment, after being increased in amount of carbon to a certain level. Up to now, there have been a number of studies in the domestic academia which were made primarily of the structure of metallic relics of three countries the period or tile era before that. Although this research was limited in type and number of the relics, it turned out to be Interesting in that it revealed the 16thor 17th century way of processing iron, even in fragments. It is thought to be fruitful that we found iron had been made even in the Chosun Dynasty from sponge iron. It is recommended that researches be made on the relics later to be excavated and originally made in $Kory\breve{o}$ or Chosun Dynasty, because they are important in history of metal technology.

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Influences of Plasma Treatment on the Electrical Characteristics of rf-magnefrom sputtered $BaTa_2O_6$ Thin Films (플라즈마 표면 처리가 $BaTa_2O_6$박막의 전기적 특성에 미치는 효과에 관한 연구)

  • Kim, Young-Sik;Lee, Yun-Hi;Ju, Byeong-Kwon;Sung, Mang-Young;Oh, Myung-Hwan
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.5
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    • pp.319-325
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    • 1999
  • Direct current(d.c.)leakage current voltage characteristics of radio-frequencymagnetron sputtered BaTa\sub 2\O\sub 6\ film capacitors with aluminum(A1) top and indium tin oxide (ITO) bottom electrodes have been investigatedas a function of applied field and temperature. In order to study surfacetreatment effect on the electrical characteristics of as-deposited film weperformed exposure of oxygen plasma on $BaTa_2O_6$ surface. d. c.current-voltage (I-V), bipolar pulse charge-voltage (Q-V), d. c. current-time (I-t) andcapacitance-frequency (C-f) analysis were performed on films. All ofthe films exhibita low leakage current, a high breakdown field strength (3MV/cm-4.5MV/cm), and high dielectric constant (20-30). From the temperature dependence of leakage current,we can conclude that the dominant conduction mechanism is ascribed toSchottky emission at high electric field (>1MV/cm) and hopping conduction at lowelectric field (<1MV/cm). According to our results, the oxide plasma surfacetreatmenton as-deposited $BaTa_2O_6$ resulted in lowering interfacebarrier height and thus, leakage current when a negative voltage applied to the A1 electrode. This can be explained by reduction of surface contamination via etching surface and filling defects such as oxygen vacancies.

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Evaluation of Al CMP Slurry based on Abrasives for Next Generation Metal Line Fabrication (연마제 특성에 따른 차세대 금속배선용 Al CMP (chemical mechanical planarization) 슬러리 평가)

  • Cha, Nam-Goo;Kang, Young-Jae;Kim, In-Kwon;Kim, Kyu-Chae;Park, Jin-Goo
    • Korean Journal of Materials Research
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    • v.16 no.12
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    • pp.731-738
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    • 2006
  • It is seriously considered using Al CMP (chemical mechanical planarization) process for the next generation 45 nm Al wiring process. Al CMP is known that it has a possibility of reducing process time and steps comparing with conventional RIE (reactive ion etching) method. Also, it is more cost effective than Cu CMP and better electrical conductivity than W via process. In this study, we investigated 4 different kinds of slurries based on abrasives for reducing scratches which contributed to make defects in Al CMP. The abrasives used in this experiment were alumina, fumed silica, alkaline colloidal silica, and acidic colloidal silica. Al CMP process was conducted as functions of abrasive contents, $H_3PO_4$ contents and pressures to find out the optimized parameters and conditions. Al removal rates were slowed over 2 wt% of slurry contents in all types of slurries. The removal rates of alumina and fumed silica slurries were increased by phosphoric acid but acidic colloidal slurry was slightly increased at 2 vol% and soon decreased. The excessive addition of phosphoric acid affected the particle size distributions and increased scratches. Polishing pressure increased not only the removal rate but also the surface scratches. Acidic colloidal silica slurry showed the highest removal rate and the lowest roughness values among the 4 different slurry types.

Effect of Protective layer on LTCC Substrate for Thin Metal Film Patterns (LTCC 보호층 형성에 따른 박막 전극패턴에 관한 연구)

  • Kim, Yong-Suk;Yoo, Won-Hee;Chang, Byeung-Gyu;Park, Jung-Hwan;Yoo, Je-Gwang;Oh, Yong-Soo
    • Korean Journal of Materials Research
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    • v.19 no.7
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    • pp.349-355
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    • 2009
  • Metal thin film patterns on a LTCC substrate, which was connected through inner via and metal paste for electrical signals, were formed by a screen printing process that used electric paste, such as silver and copper, in a conventional method. This method brought about many problems, such as non uniform thickness in printing, large line spaces, and non-clearance. As a result of these problems, it was very difficult to perform fine and high resolution for high frequency signals. In this study, the electric signal patterns were formed with the sputtered metal thin films (Ti, Cu) on an LTCC substrate that was coated with protective oxide layers, such as $TiO_2$ and $SiO_2$. These electric signal patterns' morphology, surface bonding strength, and effect on electro plating were also investigated. After putting a sold ball on the sputtered metal thin films, their adhesion strength on the LTCC substrate was also evaluated. The protective oxide layers were found to play important roles in creating a strong design for electric components and integrating circuit modules in high frequency ranges.

Deep X-ray Mask with Integrated Micro-Actuator for 3D Microfabrication via LIGA Process (3차원 LIGA 미세구조물 제작을 위한 마이크로 액추에이터 내장형 X-선 마스크)

  • Lee, Kwang-Cheol;Lee, Seung-S.
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.26 no.10
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    • pp.2187-2193
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    • 2002
  • We present a novel method for 3D microfabrication with LIGA process that utilizes a deep X-ray mask in which a micro-actuator is integrated. The integrated micro-actuator oscillates the X-ray absorber, which is formed on the shuttle mass of the micro-actuator, during X-ray exposures to modify the absorbed dose profile in X-ray resist, typically PMMA. 3D PMMA microstructures according to the modulated dose contour are revealed after GG development. An X-ray mask with integrated comb drive actuator is fabricated using deep reactive ion etching, absorber electroplating, and bulk micromachining with silicon-on-insulator (SOI) wafer. 1mm $\times$ 1 mm, 20 $\mu$m thick silicon shuttle mass as a mask blank is supported by four 1 mm long suspension beams and is driven by the comb electrodes. A 10 $\mu$m thick, 50 $\mu$m line and spaced gold absorber pattern is electroplated on the shuttle mass before the release step. The fundamental frequency and amplitude are around 3.6 kHz and 20 $\mu$m, respectively, for a do bias of 100 V and an ac bias of 20 $V_{p-p}$ (peak-peak). Fabricated PMMA microstructure shows 15.4 $\mu$m deep, S-shaped cross section in the case of 1.6 kJ $cm^{-3}$ surface dose and GG development at 35$^{\circ}C$ for 40 minutes.

Studies on Cu Dual-damascene Processes for Fabrication of Sub-0.2${\mu}m$ Multi-level Interconnects (Sub-0.2${\mu}m$ 다층 금속배선 제작을 위한 Cu Dual-dmascene공정 연구)

  • Chae, Yeon-Sik;Kim, Dong-Il;Youn, Kwan-Ki;Kim, Il-Hyeong;Rhee, Jin-Koo;Park, Jang-Hwan
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.12
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    • pp.37-42
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    • 1999
  • In this paper, some of main processes for the next generation integrated circuits, such as Cu damascene process using CMP, electron beam lithography, $SiO_2$ CVD and RIE, Ti/Cu-CVD were carried cut and then, two level Cu interconnects were accomplished. In the results of CMP unit processes, a 4,635 ${\AA}$/min of removal rate, a selectivity of Cu : $SiO_2$ of 150:1, a uniformity of 4.0% are obtained under process conditions of a head pressure of 4 PSI, table and head speed of 25rpm, a oscillation distance of 40 mm, and a slurry flow rate of 40 ml/min. Also 0.18 ${\mu}m\;SiO_2$ via-line patterns are fabricated using 1000 ${\mu}C/cm^2$ dose, 6 minute and 30 second development time and 1 minute and 30 second etching time. And finally sub-0.2 ${\mu}$ twolevel metal interconnects using the developed processes were fabricated and the problems of multilevel interconnects are discussed.

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Variation of optical characteristics with the thickness of bulk GaN grown by HVPE (HVPE로 성장시킨 bulk GaN의 두께에 따른 광학적 특성 변화)

  • Lee, Hee Ae;Park, Jae Hwa;Lee, Jung Hun;Lee, Joo Hyung;Park, Cheol Woo;Kang, Hyo Sang;Kang, Suk Hyun;In, Jun Hyeong;Shim, Kwang Bo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.28 no.1
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    • pp.9-13
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    • 2018
  • In this work, we investigated the variation of optical characteristics with the thickness of bulk GaN grown by hydride vapor phase epitaxy(HVPE) to evaluate applicability as GaN substrates in fabrication of high-brightness optical devices and high-power devices. We fabricated 2-inch GaN substrates by using HVPE method of various thickness (0.4, 0.9, 1.5 mm) and characterized the optical property with the variation of defect density and the residual stress using chemical wet etching, Raman spectroscopy and photoluminescence. As a result, we confirmed the correlation of optical properties with GaN crystal thickness and applicability of high performance optical devices via fabrication of homoepitaxial substrate.

Effect of Reaction Temperature on the Geometry of Carbon Coils Formed by SF6 Flow Incorporation in C2H2 and H2 Source Gases (SF6-C2H2-H2 기체에 의해 생성된 탄소 코일 기하구조의 반응온도 효과)

  • Kim, Sung-Hoon
    • Journal of the Korean Vacuum Society
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    • v.21 no.1
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    • pp.48-54
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    • 2012
  • Carbon coils could be synthesized on nickel catalyst layer-deposited silicon oxide substrate using $C_2H_2$ and $H_2$ as source gases and SF6 as an additive gas under thermal chemical vapor deposition system. The geometries of as-grown carbon materials were investigated with increasing the reaction temperature as the increment of $25^{\circ}C$ from $650^{\circ}C$ up to $800^{\circ}C$. At $650^{\circ}C$, the embryos for carbon coils were formed. With increasing the reaction temperature to $700^{\circ}C$, the coil-type geometries were developed. Further increasing the reaction temperature to $775^{\circ}C$, the development of wave-like nano-sized coils, instead of nano-sized coils, and occasional appearance of micro-sized carbon coils could be observed. Fluorine in $SF_6$ additive may shrink the micro-sized coil diameter via the reduction of Ni catalyst size by fluorine's etching role. Finally, the preparation of the micro-sized carbon coils having the smaller coil diameters, compared with the previously reported ones, could be possible using $SF_6$ additive.

Study on the Flame Retardation and Thermal Resistance for CPE Rubber Material Added Etching By-product of Aluminum (알루미늄 엣칭부산물을 첨가한 CPE 고무재료의 난연성 및 내열성 연구)

  • Kim, Kyung Hwan;Lee, Chang Seop
    • Journal of the Korean Chemical Society
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    • v.45 no.4
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    • pp.341-350
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    • 2001
  • Aluminum Hydroxide was employed as a thermal retardent and flame retardent for Chloropolyethylene (CPE) rubbery materials which is the construction material of automotive oil cooler hose. and then cure characteristics, physical properties, thermal resistance and flame retardation of compounded rubber were investigated, and optimum mixing conditions of rubber and flame retarding agent were deduced from the experimental results. CPE rubber material which has excellent properties of chemical corrosion resistance and cold resistance and inexpensive in price was used to prepare rubber specimen. The by-product of ething, produced from the process of surface treatment of aluminum was processed to aluminum hydroxide via crushing and purification, which is characterized by XRD, PSA, SEM and ICP-AES techniques in terms of phase, size, distribution, morphology and components of particles and then mixed to CPE rubber materials in the range of 0~80 phr. Hardness, tensile strength, elongation and thermal properties of compounded rubber specimens were tested. The optimum mixing ratio of rubber to additives to give maximum effect on thermal resistance and flame retardation, within the range of tolerable specification for rubber materials, was determined to be 40 phr. The flame retardation of CPE rubber materials was found to be increased by 5 times at this mixing ratio.

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Oxyfluorination of Pitch-based Activated Carbon Fibers for High Power Electric Double Layer Capacitor (고출력 전기이중층 캐패시터를 위한 핏치계 활성탄소섬유의 함산소불소화 처리)

  • Jung, Min-Jung;Ko, Yoonyoung;Kim, Kyung Hoon;Lee, Young-Seak
    • Applied Chemistry for Engineering
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    • v.28 no.6
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    • pp.638-644
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    • 2017
  • Pitch based activated carbon fibers for electric double layer capacitor (EDLC) electrodes were treated by oxyfluorination via varying the ratio of fluorine and oxygen gases to improve high power property. As the partial pressure of fluorine increased, the oxyfluorinated activated carbon fibers showed an increase of linear fluorine functional groups. While the oxygen functional groups increased, no changes was observed with respect to the partial gas pressure. The specific surface area and pore volume decreased due to the etching reaction on the activated carbon fiber surface through oxyfluorination, but the mesopore volume increased about 4.5 times. In the case of activated carbon fibers treated with 50% of the fluorine gas partial pressure, the specific capacitance increased to about 29% and 61% at scan rates of 5 and 50 mV/s, respectively. The improvement of the specific capacitance was believed to be due to the introduction of oxygen and fluorine functional groups on the activated carbon fiber surface and the increase of mesopores through oxyfluorination.