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http://dx.doi.org/10.6111/JKCGCT.2018.28.1.009

Variation of optical characteristics with the thickness of bulk GaN grown by HVPE  

Lee, Hee Ae (Division of Advanced Materials Science and Engineering, Hanyang University)
Park, Jae Hwa (Division of Advanced Materials Science and Engineering, Hanyang University)
Lee, Jung Hun (Division of Advanced Materials Science and Engineering, Hanyang University)
Lee, Joo Hyung (Division of Advanced Materials Science and Engineering, Hanyang University)
Park, Cheol Woo (Division of Advanced Materials Science and Engineering, Hanyang University)
Kang, Hyo Sang (Division of Advanced Materials Science and Engineering, Hanyang University)
Kang, Suk Hyun (Division of Advanced Materials Science and Engineering, Hanyang University)
In, Jun Hyeong (Division of Advanced Materials Science and Engineering, Hanyang University)
Shim, Kwang Bo (Division of Advanced Materials Science and Engineering, Hanyang University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.28, no.1, 2018 , pp. 9-13 More about this Journal
Abstract
In this work, we investigated the variation of optical characteristics with the thickness of bulk GaN grown by hydride vapor phase epitaxy(HVPE) to evaluate applicability as GaN substrates in fabrication of high-brightness optical devices and high-power devices. We fabricated 2-inch GaN substrates by using HVPE method of various thickness (0.4, 0.9, 1.5 mm) and characterized the optical property with the variation of defect density and the residual stress using chemical wet etching, Raman spectroscopy and photoluminescence. As a result, we confirmed the correlation of optical properties with GaN crystal thickness and applicability of high performance optical devices via fabrication of homoepitaxial substrate.
Keywords
Bulk GaN; Thickness; Optical property; Defect density; Residual stress;
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Times Cited By KSCI : 1  (Citation Analysis)
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1 D.K. Oh, B.G. Choi, S.Y. Bang, J.W. Eun, J.H. Chung, S.K. Lee, J.H. Chung and K.B. Shim, "Fabrication and characterization of GaN substrate by HVPE", J. Korean Cryst. Growth Cryst. Technol. 20 (2010) 164.
2 C.H. Roh, Y.J. Park, E.K. Kim and K.B. Shim, "The synthesis and characterization of GaN micro-crystals", J. Korean Cryst. Growth Cryst. Technol. 11 (2001) 43.
3 S.H. Hong, H.S. Jeon, Y.H. Han, E.J. Kim, A.R. Lee, K.H. Kim, S.L. Hwang, H. Ha, H.S. Ahn and M. Yang, "Characteristics of selective area growth of GaN/AlGaN double heterostructure grown by hydride vapor phase epitaxy on r-plane sapphire substrate", J. Korean Cryst. Growth Cryst. Technol. 19 (2009) 6.
4 C. Lee, "Study on the optical properties of gallium nitride" (KAIST, Korea, 1999) p. 84.
5 Y.G. Lee, "LED industry and latest technology trend", (EPNC, Korea, 2009) p. 52.
6 E.K. Suh, C.H. Hong, H.S. Kim and J.H. Cho, "Physics and technological overview of III-V nitride semiconductor based light-emitting diodes", Physics and High Technology (2014) 16.
7 Y.J. Lee and S.T. Kim, "Properties of freestanding GaN prepared by HVPE using a sapphire as substrate", Korean J. Met. Mater. 8 (1998) 591.
8 S.T. Yoon, "Thermal annealing treatment and optical properities of GaN single crystal grown using the HVPE" (Hanyang University, Korea, 2007) p. 11.
9 J.H. Park, H.A. Lee, J.H. Lee, C.W. Park, J.H. Lee, H.S. Kang, H.M. Kim, S.H. Kang, S.Y. Bang, S.K. Lee and K.B. Shim, "Crystal characteristics of bulk GaN single crystal grown by HVPE method with the increase of thickness", J. Ceram. Proc. Res. 18 (2017) 93.
10 J.H. Park, H.A. Lee, J.H. Lee, C.W. Park, J.H. Lee, H.S. Kang, S.H. Kang, S.Y. Bang, S.K. Lee and K.B. Shim, "Thickness optimization of the bulk GaN single crystal grown by HVPE processing variable control", J. Korean Cryst. Growth Cryst. Technol. 27 (2017) 89.
11 F.C. Wang, C.L. Cheng, Y.F. Chen, C.F. Huang and C.C. Yang, "Residual thermal strain in thick GaN epifilms revealed by cross-sectional Raman scattering and cathodoluminescence spectra", Semicond. Sci. Technol. 22 (2007) 896.
12 J.H. Park, Y.P. Hong, C.W. Park, H.M. Kim, D.K. Oh, B.G. Choi, S.K. Lee and K.B. Shim, "The molten KOH/ NaOH wet chemical etching of HVPE-grown GaN", J. Korean Cryst. Growth Cryst. Technol. 24 (2014) 135.
13 H. Gu, G. Ren, T. Zhou, F. Tian, Y. Xu, Y. Zhang, M. Wang, Z. Zhang, D. Cai, J. Wang and K. Xu, "Study of optical properties of bulk GaN crystals grown by HVPE", J. Alloys Compd. 674 (2016) 218.
14 D.K. Oh, V.T.H. Lai, B.G. Choi, S. Yi, J.H. Chung, S.K. Lee and K.B. Shim, "Characterizations of GaN polarity controlled by substrate using the hydride vapor phase epitaxy (HVPE) technique", J. Korean Cryst. Growth Cryst. Technol. 18 (2008) 97.
15 M.A. Reshchikov, "Evaluation of GaN by photoluminescence measurement", Phys. Status Solidi C 8 (2011) 2136.
16 Y.J. Lee and S.T. Kim, "Optical properties of HVPE grown thick-film GaN on $MgAl_2O_4$ substrate", Korean J. Mater. Res. 8 (1998) 526.
17 K.H Kim, "The study on GaN grown by hydride vapor phase epitaxy" (Korea Marintime University, Korea, 2004) p. 46.
18 M.H. Lee, "A study on the fabrication GaN substrates by HVPE method" (Hanbat National University, Korea, 2003) p. 37.
19 H. Siegle, G. Kaczmarczyk, L. Filippids, A.P. Litvinchuk, A. Hoffmann and C. Thomsen, "Zone-boundary phonons in hexagonal and cubic GaN", Phys. Rev. B: Condens. Matter 55 (1997) 7000.
20 L. Li, J.Yu, Z. Hao, L. Wang, J. Wang, Y. Han, H. Li, B. Xiong, C. Sun and Y. Luo, "Influence of point defects on optical properties of GaN-based materials by first principle study", Comput. Mater. Sci. 129 (2017) 49.
21 C. Roder, F. Lipski, F. Habel, G. Leibiger, M. Abendroth, C. Himcinschi and J. Kortus, "Raman spectroscopic characterization of epitaxially grown GaN on sapphire", J. Phys. D: Appl. Phys. 46 (2013) 285302.
22 K.S. Lee, "Studies on the epi-growth and characterization of GaN using modified HVPE method" (Yeungnam University, Korea, 2001) p. 24.
23 M. Seon, T. Prokofyeva and M. Holtz, "Selective growth of high quality GaN on Si(111) substrates", Appl. Phys. Lett. 76 (2000) 1842.
24 S.T. Kim and D.C. Moon, "Optical properties of HVPE grown GaN substrate", J. Korean Inst. Electr. Electron. Mater. Eng. 11 (1998) 784.