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http://dx.doi.org/10.3740/MRSK.2006.16.12.731

Evaluation of Al CMP Slurry based on Abrasives for Next Generation Metal Line Fabrication  

Cha, Nam-Goo (Division of Materials and Chemical Engineering, Hanyang University)
Kang, Young-Jae (Division of Materials and Chemical Engineering, Hanyang University)
Kim, In-Kwon (Division of Materials and Chemical Engineering, Hanyang University)
Kim, Kyu-Chae (Division of Materials and Chemical Engineering, Hanyang University)
Park, Jin-Goo (Division of Materials and Chemical Engineering, Hanyang University)
Publication Information
Korean Journal of Materials Research / v.16, no.12, 2006 , pp. 731-738 More about this Journal
Abstract
It is seriously considered using Al CMP (chemical mechanical planarization) process for the next generation 45 nm Al wiring process. Al CMP is known that it has a possibility of reducing process time and steps comparing with conventional RIE (reactive ion etching) method. Also, it is more cost effective than Cu CMP and better electrical conductivity than W via process. In this study, we investigated 4 different kinds of slurries based on abrasives for reducing scratches which contributed to make defects in Al CMP. The abrasives used in this experiment were alumina, fumed silica, alkaline colloidal silica, and acidic colloidal silica. Al CMP process was conducted as functions of abrasive contents, $H_3PO_4$ contents and pressures to find out the optimized parameters and conditions. Al removal rates were slowed over 2 wt% of slurry contents in all types of slurries. The removal rates of alumina and fumed silica slurries were increased by phosphoric acid but acidic colloidal slurry was slightly increased at 2 vol% and soon decreased. The excessive addition of phosphoric acid affected the particle size distributions and increased scratches. Polishing pressure increased not only the removal rate but also the surface scratches. Acidic colloidal silica slurry showed the highest removal rate and the lowest roughness values among the 4 different slurry types.
Keywords
Al (aluminum); Chemical mechanical planarization (CMP); Metallization; Acidic colloidal slurry;
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