• 센서학회지
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• 제14권2호
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• pp.85-90
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• 2005

In this study, we have fabricated a three branches vertical Hall sensor for detecting three phases rotation informations of miniaturized brushless motor. The sensor gives three position signals phase shifted by $120^{\circ}$, corresponding to the motor driving signals. The branch has one Hall output and one input each other. The central part acts as common driving input. Sensor has branch width of $150{\mu}m$ and distance from central electrode to Hall electrode of $100{\mu}m$. The sensitivity of sensor is 250 V/$A{\cdot}T$ at magnetic field of 0.1 T. It has also showed three sine waves of Hall voltages with $120^{\circ}$ phase over a $360^{\circ}$ rotation. A packaged sensing part are $2{\times}2mm^{2}$ and has been successfully tested on a motor rotation at a speed up to 60,000 rpm.

• Journal of electromagnetic engineering and science
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• 제18권1호
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• pp.35-40
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• 2018

This study presents a vertical-type CMOS Hall device with improved sensitivity to detect a 3D magnetic field in various types of sensors or communication devices. To improve sensitivity, trenches are implanted next to the current input terminal, so that the Hall current becomes maximum. The effect of the dimension and location of trenches on sensitivity is simulated in the COMSOL simulator. A vertical-type Hall device with a width of $16{\mu}m$ and a height of $2{\mu}m$ is optimized for maximum sensitivity. The simulation result shows that it has a 23% better result than a conventional vertical-type CMOS Hall device without a trench.

• 센서학회지
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• 제23권6호
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• pp.392-396
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• 2014

The 2-dimensional silicon vertical Hall devices, which are sensitive to X,Y components of the magnetic field parallel to the surface of the chip, are fabricated using a modified bipolar process. It consists of the thin p-layer at Si-$SiO_2$ interface and n-epi layer to improve the sensitivity and influence of interface effect. Experimental samples are a sensor type K with and type J without $p^+$ isolation dam adjacent to the center current electrode. The results for both type show a more high sensitivity than the former's 2-dimensional vertical Hall devices and a good linearity. The measured non-linearity is about 0.8%. The sensitivity of type J and type K are about 66 V/AT and 200 V/AT, respectively. This sensor's behavior can be explained by the similar J-FET model.

• 센서학회지
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• 제20권4호
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• pp.260-265
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• 2011

The silicon vertical hall devices are fabricated using a modified bipolar process. It consists of the thin p-layer at Si-$SiO_2$, interface and n-epi layer without $n^+$buried layer to improve the sensitivity and influence of interface effects. Experimental samples are a sensor type I with and type H without p+isolation dam adjacent to the center current electrode. The experimental results for both type show a more high current-related sensitivity than the former's vertical hall devices. The sensitivity of type H and type I are about 150 V/AT and 340 V/AT, respectively. This sensor's behavior can be explained by the similar J-FET model.

• 한국전기전자재료학회논문지
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• 제18권9호
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• pp.840-845
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• 2005

A three branches vortical Hall sensor for detecting rotation angle of brushless motor has fabricated. The sensor is constructed three branches of $150{\mu}m$ width and $300{\mu}m$ distance from central electrode to Hall electrode. Each branch has one Hall output and one Hall input. The central electrode acts as common driving input. According to rotation angle change of brushless motor, sensor gives three position signals phase shifted by $120^{\circ}$. The sensitivity of sensor is 200V/A$\cdot$T at magnetic field of 0.1 T and constant driving current of 1mA. It has also showed three sine waves of Hall output voltages with $120^{\circ}$ phase over one motor rotation. The noise can limit sensor's resolution. We have measured sensor's noise characteristics. The detectable minimum magnetic field is $20{\mu}T$ at driving current 1mA, measured frequency 1 kHz and bandwidth$({\Delta}f)$ of 1Hz.

• 마이크로전자및패키징학회지
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• 제9권4호
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• pp.25-29
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• 2002

기존 홀 센서의 단점을 개선하기 위해서 트랜치를 이용한 수직 홀 센서를 제작하였다. 수직 홀 센서는 센서의 칩 표면에 수평 자계를 검출할 수 있으며, 홀 센서는 실리콘 직접 본딩 기술에 의해 제작된 SOI 기판 위에 제작하였다. 기판 아래의 $SiO_2$층과 마이크로머시닝에 의한 트랜치가 홀 센서의 동작 영역을 정의한다. 홀 센서의 감도는 150V/AT로 측정되었으며 안정된 값을 나타내었다.

• 전자공학회논문지A
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• 제29A권3호
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• pp.72-78
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• 1992

The Silicon vertical Hall devices are fabricated using standard bipolar process and characterized in terms of the Hall voltage, sensitivities, and offset voltage. The Hall voltage and sensitivity of the devices showed good linearity with respect to the magnetic flux density and reverse supply voltage Vr. The sensitivity of device with P$^{+}$ isolation dam has been increased up to 1.2 times compared to that of device without the dam. With the condition of V$_{r}$=-5.0[V], B=0.4[T] and I$_{sup}$=1.0[mA], the Hall voltage and sensitivity of the device with P$^{+}$ isolation dam were about 29[mV] and 74[V/AT], respectively. These vertical Hall devices can be used as the adjustable magnetic fields sensor.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.2023-2025
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• 2002

We have fabricated a novel vertical trench-Hall device sensitive to the magnetic field parallel to the sensor chip surface. The vertical trench-Hall device is built on SOI wafer which is produced by silicon direct bonding technology using bulk micromachining, where buried $SiO_2$ layer and surround trench define active device volume. Sensitivity up to 350 V/AT is measured.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 추계학술대회 논문집 전기물성,응용부문
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• pp.251-253
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• 2002

We have fabricated a novel Vertical Trench Hall-Effect Device sensitive to the magnetic field parallel to the sensor chip surface for non-contact angular position sensing applications. The Vertical Trench Hall-Effect Device is built on SOI wafer which is produced by silicon direct bonding technology using bulk micromachining, where buried $SiO_2$ layer and surround trench define active device volume. Sensitivity up to 150 V/AT is measured.

• 한국엔터테인먼트산업학회논문지
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• 제5권2호
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• pp.166-172
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• 2011

저가의 홀센서를 이용하여 자석의 위치를 인식하는 센서 시스템을 제안하였다. 먼저 모델식을 이용하여 자석에 의한 자기장을 측정하고, 수평 자계와 수직 자계의 특성을 분석하여, 센서의 배치방법을 결정하였다. 자석과 홀센서의 위치 관계에 따라서 측정된 자기장 값으로부터 자석의 위치를 추정하는 알고리즘을 제안하고, 이론적인 오차를 계산하였다. 또한 마이크로 컨트롤러를 사용하여 개발할 때의 단점인 실시간 데이터 확인이 어려운 점을 극복하기 위해서 컴퓨터용 응용 프로그램을 작성하여, 작업의 수월성을 높였다. 계산된 이론적 오차는 0.0025cm 이하로 나타났으며 실제로 개발된 시스템의 오차는 0.07cm 이하로 측정되어 여러 가지 상황에서 제안한 방법들의 우수성을 입증하였다.