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http://dx.doi.org/10.26866/jees.2018.18.1.35

Sensitivity Enhancement of a Vertical-Type CMOS Hall Device for a Magnetic Sensor  

Oh, Sein (School of Electrical Engineering, Kookmin University)
Jang, Byung-Jun (School of Electrical Engineering, Kookmin University)
Chae, Hyungil (School of Electrical Engineering, Kookmin University)
Publication Information
Journal of electromagnetic engineering and science / v.18, no.1, 2018 , pp. 35-40 More about this Journal
Abstract
This study presents a vertical-type CMOS Hall device with improved sensitivity to detect a 3D magnetic field in various types of sensors or communication devices. To improve sensitivity, trenches are implanted next to the current input terminal, so that the Hall current becomes maximum. The effect of the dimension and location of trenches on sensitivity is simulated in the COMSOL simulator. A vertical-type Hall device with a width of $16{\mu}m$ and a height of $2{\mu}m$ is optimized for maximum sensitivity. The simulation result shows that it has a 23% better result than a conventional vertical-type CMOS Hall device without a trench.
Keywords
Hall Sensor; Magnetic Sensor; Sensitivity; Trench; Vertical-Type Hall Device;
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