Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Magnetic Sensitivity Improvement of 2-Dimensional Silicon Vertical Hall Device

2 차원 Si 종형 Hall 소자의 자기감도 개선

  • Ryu, Ji-Goo (Department of Electronic Engineering, Pukyong National University)
  • 류지구 (부경대학교 전자공학과)
  • Received : 2014.09.02
  • Accepted : 2014.11.18
  • Published : 2014.11.30
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Abstract

The 2-dimensional silicon vertical Hall devices, which are sensitive to X,Y components of the magnetic field parallel to the surface of the chip, are fabricated using a modified bipolar process. It consists of the thin p-layer at Si-$SiO_2$ interface and n-epi layer to improve the sensitivity and influence of interface effect. Experimental samples are a sensor type K with and type J without $p^+$ isolation dam adjacent to the center current electrode. The results for both type show a more high sensitivity than the former's 2-dimensional vertical Hall devices and a good linearity. The measured non-linearity is about 0.8%. The sensitivity of type J and type K are about 66 V/AT and 200 V/AT, respectively. This sensor's behavior can be explained by the similar J-FET model.

Keywords

References

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