• Title/Summary/Keyword: Variable gain amplifier (VGA)

검색결과 39건 처리시간 0.025초

A Highly Linear CMOS Baseband Chain for Wideband Wireless Applications

  • Yoo, Seoung-Jae;Ismail, Mohammed
    • ETRI Journal
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    • 제26권5호
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    • pp.486-492
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    • 2004
  • The emergence of wide channel bandwidth wireless standards requires the use of a highly linear, wideband integrated CMOS baseband chain with moderate power consumption. In this paper, we present the design of highly linear, wideband active RC filters and a digitally programmable variable gain amplifier. To achieve a high unity gain bandwidth product with moderate power consumption, the feed-forward compensation technique is applied for the design of wideband active RC filters. Measured results from a $0.5{\mu}m$ CMOS prototype baseband chain show a cutoff frequency of 10 MHz, a variable gain range of 33 dB, an in-band IIP3 of 13 dBV, and an input referred noise of 114 ${\mu}Vrms$ while dissipating 20 mW from a 3 V supply.

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능동 상쇄 회로를 이용한 곡면 알루미늄 판의 Backscatter Field 감쇄 연구 (A Study on Backscatter Field Reduction of the Curved Aluminum Plate using Active Cancellation Circuit)

  • 김준환;정용식;천창율
    • 전기학회논문지
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    • 제64권2호
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    • pp.276-279
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    • 2015
  • This paper propose a method to reduce the backscatter field of the curved aluminum plate using the cancellation system. The cancellation circuit is composed of a circulator, a LNA(Low Noise Amplifier), a VGA(Variable Gain Amplifier) and two phase shifters. Prior to experiment, we performed simulations to confirm the possibility using FDTD(Finite Difference Time Domain) simulator. We confirmed that the backscatter field could be reduced by the cancellation circuit when we changed the appropriate gain and phase. Finally, we performed an experiment to verify the performance of the cancellation circuit.

CNT 센서 어레이를 위한 신호 검출 시스템 (A Signal Readout System for CNT Sensor Arrays)

  • 신영산;위재경;송인채
    • 대한전자공학회논문지SD
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    • 제48권9호
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    • pp.31-39
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    • 2011
  • 본 논문에서는 Carbon Nanotube(CNT) 센서 어레이를 위한 저 전력, 소 면적의 신호 검출 시스템을 제안한다. 제안된 시스템은 신호 검출회로, 디지털 제어기, UART I/O로 구성된다. 신호 검출회로는 VGA를 공유하는 64개의 transimpedance amplifier(TIA)와 11비트 해상도의 successive approximation register-ADC(SAR-ADC)를 사용하였다. TIA는 센서의 전압 바이어스 및 전류를 증폭하기 위한 active input current mirror(AICM)와 증폭된 전류를 전압으로 변환하는 저항 피드백 방식의 VGA(Variable Gain Amplifier)로 구성되어있다. 이러한 구조는 큰 면적과 많은 전력을 필요로 하는 VGA를 공유하기 때문에 다수의 센서 어레이에 대해 검출 속도의 저하 없이 저 전력, 소 면적으로 신호 검출이 가능하게 한다. SAR-ADC는 저 전력을 위하여 입력 전압 level에 따라 하위 bit의 동작을 생략하는 수정된 알고리즘을 사용하였다. ADC 및 센서의 선택은 UART Protocol 기반의 디지털 제어기에 의해 선택되며, ADC의 data는 UART I/O를 통해 컴퓨터와 같은 단말기를 통해 모니터링 할 수 있다. 신호 검출회로는 0.13${\mu}m$ CMOS 공정으로 설계되었으며 면적은 0.173 $mm^2$이며 640 sample/s의 속도에서 77.06${\mu}W$의 전력을 소모한다. 측정 결과 10nA - 10${\mu}A$의 전류 범위에서 5.3%의 선형성 오차를 가진다. 또한 UART I/O, 디지털 제어기는 0.18${\mu}m$ CMOS 공정을 이용하여 제작하였으며 총면적은 0.251 $mm^2$ 이다.

생체신호 측정을 위한 아날로그 전단 부 회로 설계 (Analog Front-End Circuit Design for Bio-Potential Measurement)

  • 임신일
    • 전자공학회논문지
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    • 제50권11호
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    • pp.130-137
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    • 2013
  • 본 논문은 생체신호 측정을 위한 저전력/저면적 AFE(analog front-end)에 관한 것이다. 제안된 AFE는 계측증폭기(IA), 대역 통과 필터(BPF), 가변 이득 증폭기(VGA), SAR 타입 A/D 변환기로 구성된다. 전류 분할 기법을 이용한 작은 gm (LGM) 회로와 고 이득 증폭기로 구성된 Miller 커패시터 등가 기술을 이용하여, 외부 수동소자를 사용하지 않고 AC-coupling을 구현하였다. 응용에 따른 BPF의 고역 차단 주파수 변화는 전압 조절기(regulator)를 이용한 출력 전압 변화를 이용하여 $g_m$을 변화하여 구현 시켰다. 내장된 ADC는 커패시터 분할 기법을 적용한 이중 배열 커패시터 방식의 D/A변환기와 비동기 제어 방식을 이용하여 저 전력과 저 면적으로 구현하였다. 일반 CMOS 0.18um 공정을 이용하여 칩으로 제작하였고, 전체 칩 면적은 PAD등을 모두 포함하여 $650um{\times}350 um$이다. 제안된 AFE의 전류 소모는 1.8V에서 6.3uA이다.

A 3.1 to 5 GHz CMOS Transceiver for DS-UWB Systems

  • Park, Bong-Hyuk;Lee, Kyung-Ai;Hong, Song-Cheol;Choi, Sang-Sung
    • ETRI Journal
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    • 제29권4호
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    • pp.421-429
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    • 2007
  • This paper presents a direct-conversion CMOS transceiver for fully digital DS-UWB systems. The transceiver includes all of the radio building blocks, such as a T/R switch, a low noise amplifier, an I/Q demodulator, a low pass filter, a variable gain amplifier as a receiver, the same receiver blocks as a transmitter including a phase-locked loop (PLL), and a voltage controlled oscillator (VCO). A single-ended-to-differential converter is implemented in the down-conversion mixer and a differential-to-single-ended converter is implemented in the driver amplifier stage. The chip is fabricated on a 9.0 $mm^2$ die using standard 0.18 ${\mu}m$ CMOS technology and a 64-pin MicroLead Frame package. Experimental results show the total current consumption is 143 mA including the PLL and VCO. The chip has a 3.5 dB receiver gain flatness at the 660 MHz bandwidth. These results indicate that the architecture and circuits are adaptable to the implementation of a wideband, low-power, and high-speed wireless personal area network.

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A 0.13 ${\mu}m$ CMOS UWB RF Transmitter with an On-Chip T/R Switch

  • Kim, Chang-Wan;Duong, Quoc-Hoang;Lee, Seung-Sik;Lee, Sang-Gug
    • ETRI Journal
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    • 제30권4호
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    • pp.526-534
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    • 2008
  • This paper presents a fully integrated 0.13 ${\mu}m$ CMOS MB-OFDM UWB transmitter chain (mode 1). The proposed transmitter consists of a low-pass filter, a variable gain amplifier, a voltage-to-current converter, an I/Q up-mixer, a differential-to-single-ended converter, a driver amplifier, and a transmit/receive (T/R) switch. The proposed T/R switch shows an insertion loss of less than 1.5 dB and a Tx/Rx port isolation of more than 27 dB over a 3 GHz to 5 GHz frequency range. All RF/analog circuits have been designed to achieve high linearity and wide bandwidth. The proposed transmitter is implemented using IBM 0.13 ${\mu}m$ CMOS technology. The fabricated transmitter shows a -3 dB bandwidth of 550 MHz at each sub-band center frequency with gain flatness less than 1.5 dB. It also shows a power gain of 0.5 dB, a maximum output power level of 0 dBm, and output IP3 of +9.3 dBm. It consumes a total of 54 mA from a 1.5 V supply.

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dB-Linear Function Circuit Using Composite NMOS Transistor

  • Duong Hoang Nam;Duong Quoe Hoang
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2004년도 학술대회지
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    • pp.494-498
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    • 2004
  • In this paper, the design of a CMOS exponential V-I converter (EVIC,) based on Taylor's concept, is presented. The composite NMOS transistor is used for realizing the exponential characteristics. In a 0.25 $\mu$m CMOS process, the simulations show more than 20 dB output current range and 15 dB linear range with the linearity error less than $\pm$ 0.5 dB. The power dissipation is less than 0.3 mW with $\pm$ 1.5 V supply voltage. The proposed EVIC can be used for the design of an extremely low­voltage and low-power variable gain amplifier (VGA) and automatic gain control (AGC).

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ULTRA LOW-POWER AND HIGH dB-LINEAR CMOS EXPONENTIAL VOLTAGE-MODE CIRCUIT

  • Duong Quoc-Hoang;Lee Sang-Gug
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2004년도 ICEIC The International Conference on Electronics Informations and Communications
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    • pp.221-224
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    • 2004
  • This paper proposed an ultra low-power CMOS exponential voltage-mode circuit using the Pseudo-exponential function for realizing the exponential characteristics. The proposed circuit provides high dB-linear output voltage range at low-voltage applications. In a $0.25\;\mu m$ CMOS process, the simulations show more than 35 dB output voltage range and 26 dB with the linearity error less than $\pm0.5\;dB.$ The average current consumption is less than 80 uA. The proposed circuit can be used for the design of an extremely low-power variable gain amplifier (VGA) and automatic gain control (AGC).

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Design of Current-Type Readout Integrated Circuit for 160 × 120 Pixel Array Applications

  • Jung, Eun-Sik;Bae, Young-Seok;Sung, Man-Young
    • Journal of Electrical Engineering and Technology
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    • 제7권2호
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    • pp.221-224
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    • 2012
  • We propose a Readout Integrated Circuit (ROIC), which applies a fixed current bias sensing method to the input stage in order to simplify the circuit structure and the infrared sensor characteristic control. For the sample-and-hold stage to display and control a signal detected by the infrared sensor using a two-dimensional (2D) focal plane array, a differential delta sampling (DDS) circuit is proposed, which effectively removes the FPN. In addition, the output characteristic is improved to have wider bandwidth and higher gain by applying a two-stage variable gain amplifier (VGA). The output characteristic of the proposed device was 23.91 mV/$^{\circ}C$, and the linearity error rate was less than 0.22%. After checking the performance of the ROIC using HSPICE simulation, the chip was manufactured and measured using the SMIC 0.35 um standard CMOS process to confirm that the simulation results from the actual design are in good agreement with the measurement results.

A 1.2 V 12 b 60 MS/s CMOS Analog Front-End for Image Signal Processing Applications

  • Jeon, Young-Deuk;Cho, Young-Kyun;Nam, Jae-Won;Lee, Seung-Chul;Kwon, Jong-Kee
    • ETRI Journal
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    • 제31권6호
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    • pp.717-724
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    • 2009
  • This paper describes a 1.2 V 12 b 60 MS/s CMOS analog front-end (AFE) employing low-power and flexible design techniques for image signal processing. An op-amp preset technique and programmable capacitor array scheme are used in a variable gain amplifier to reduce the power consumption with a small area of the AFE. A pipelined analog-to-digital converter with variable resolution and a clock detector provide operation flexibility with regard to resolution and speed. The AFE is fabricated in a 0.13 ${\mu}m$ CMOS process and shows a gain error of 0.68 LSB with 0.0352 dB gain steps and a differential/integral nonlinearity of 0.64/1.58 LSB. The signal-to-noise ratio of the AFE is 59.7 dB at a 60 MHz sampling frequency. The AFE occupies 1.73 $mm^2$ and dissipates 64 mW from a 1.2 V supply. Also, the performance of the proposed AFE is demonstrated by an implementation of an image signal processing platform for digital camcorders.