• Korean Journal of Materials Research
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• v.18 no.3
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• pp.123-127
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• 2008

The production of tin oxide ($SnO_2$) microrods on iridium (Ir)-coated substrates was achieved through the thermal evaporation of Sn powders in which a sufficiently high $O_2$ partial pressure was employed. Scanning electron microscopy revealed that the product consisted of microrods with diameters that ranged from 0.9 to $40\;{\mu}m$. X-ray diffraction, high-resolution transmission electron microscopy, and selected area electron diffraction indicated that the microrods were $SnO_2$ with a rutile structure. As the microrod tips were free of metal particles, it was determined that the growth of $SnO_2$ microrods via the present route was dominated by a vapor-solid mechanism. The thickening of rod-like structures was related to the utilization of sufficiently high $O_2$ partial pressure during the synthesis process, whereas low $O_2$ partial pressure facilitated the production of thin rods.

• Korean Journal of Materials Research
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• v.27 no.12
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• pp.710-715
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• 2017

We synthesized YOF(yttirum oxyfluoride) powders through solid state reactions using $Y_2O_3$ and $YF_3$ as raw materials. The synthesis of crystalline YOF was started at $300^{\circ}C$ and completed at $500^{\circ}C$. The atmosphere during synthesis had a negligible effect on the synthesis of the YOF powder under the investigated temperature range. The particle size distribution of the YOF was nearly identical to that of the mixed $Y_2O_3$ and $YF_3$ powders. When the synthesized YOF powders were used as a raw material for the suspension plasma spray(SPS) coating, the crystalline phases of the coated layer consisted of YOF and $Y_2O_3$, indicating that oxidation or evaporation of YOF powders occurred during the coating process. Based on thermogravimetric analysis, the crystalline formation appeared to be affected by the evaporation of fluoride because of the high vapor pressure of the YOF material.

• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.306-312
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• 2013

Single-crystalline InSb nanowire was synthesized on $SiO_2$ wafer via vapor-liquid-solid (VLS) mechanism using chemical vapor deposition method. According to the source container system (open or close) which contain InSb powder and $SiO_2$ wafer, the single-crystalline InSb nanowires have different growth mechanisms. Structural characterization of the InSb nanowires was examined by scanning electron microscope (SEM). Composition of the nanowires was investigated using x-ray diffraction (XRD) and energy dispersive x-ray spectroscopy (EDS). This study demonstrates that length and diameter of the InSb nanowires are long and thick using open-boat system by VLS and additional vapor-solid (VS) mechanisms, because open-boat system can carry a large amount of vapor-phase InSb precursor than close-boat system.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.16.2-16.2
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• 2011

Graphene has attracted significant attention due to its unique characteristics and promising nanoelectronic device applications. For practical device applications, it is essential to synthesize high-quality and large-area graphene films. Graphene has been synthesized by eloborated mechanical exfoliation of highly oriented pyrolytic graphite, chemical reduction of exfoliated grahene oxide, thermal decomposition of silicon carbide, and chemical vapor deposition (CVD) on metal substrates such as Ni, Cu, Ru etc. The CVD has advantages over some of other methods in terms of mass production on large-areas substrates and it can be easily separated from the metal substrate and transferred to other desired substrates. Especially, plasma-enhanced CVD (PECVD) can be very efficient to synthesize high-quality graphene. Little information is available on the synthesis of graphene by PECVD even though PECVD has been demonstrated to be successful in synthesizing various carbon nanostructures such as carbon nanotubes and nanosheets. In this study, we synthesized graphene on $Ni/SiO_2/Si$ and Cu plate substrates with CH4 diluted in $Ar/H_2$ (10%) by using an inductively-coupled PECVD (ICPCVD). High-quality graphene was synthesized at as low as $700^{\circ}C$ with 600 W of plasma power while graphene layer was not formed without plasma. The growth rate of graphene was so fast that graphene films fully covered on substrate surface just for few seconds $CH_4$ gas supply. The transferred graphene films on glass substrates has a transmittance at 550 nm is higher 94%, indicating 1~3 monolayers of graphene were formed. FETs based on the grapheme films transferred to $Si/SiO_2$ substrates revealed a p-type. We will further discuss the synthesis of graphene and doped graphene by ICPVCD and their characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.380.2-380.2
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• 2014

Direct synthesis of graphene using a chemical vapor deposition (CVD) has been considered a facile way to produce large-area and uniform graphene film, which is an accessible method from an application standpoint. Hence, their fundamental understanding is highly required. Unfortunately, the CVD growth mechanism of graphene on Cu remains elusive and controversial. Here, we present the effect of graphene growth parameters on the number of graphene layers were systematically studied and growth mechanism on copper substrate was proposed. Parameters that could affect the thickness of graphene growth include the pressure in the system, gas flow rate, growth pressure, growth temperature, and cooling rate. We hypothesis that the partial pressure of both the carbon sources and hydrogen gas in the growth process, which is set by the total pressure and the mole fraction of the feedstock, could be the factor that controls the thickness of the graphene. The graphene on Cu was grown by the diffusion and precipitation mode not by the surface adsorption mode, because similar results were observed in graphene/Ni system. The carbon-diffused Cu layer was also observed after graphene growth under high CH4 pressure. Our findings may facilitate both the large-area synthesis of well-controlled graphene features and wide range of applications of graphene.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.88.1-88.1
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• 2012

Silicon nanowires (SiNWs), due to their unusual quantum-confinement effects that lead to superior electrical and optical properties compared to those of the bulk silicon, have been widely researched as a potential building block in a variety of novel electronic devices. The conventional means for the synthesis of SiNWs has been the vapor-liquid-solid method using chemical vapor deposition; however, this method is time consuming, environmentally unfriendly, and do not support vertical growth. As an alternate, the electroless etching method has been proposed, which uses metal catalysts contained in aqueous hydrofluoric acids (HF) for vertically etching the bulk silicon substrate. This new method can support large-area growth in a short time, and vertically aligned SiNWs with high aspect ratio can be readily synthesized with excellent reproducibility. Nonetheless, there still are rooms for improvement such as the poor surface characteristics that lead to degradation in electrical performance, and non-uniformity of the diameter and shapes of the synthesized SiNWs. Here, we report a facile method of SiNWs synthesis having uniform sizes, diameters, and shapes, which may be other than just cylindrical shapes using a modified nanosphere lithography technique. The diameters of the polystyrene nanospheres can be adjustable through varying the time of O2 plasma treatment, which serve as a mask template for metal deposition on a silicon substrate. After the removal of the nanospheres, SiNWs having the exact same shape as the mask are synthesized using wet etching technique in a solution of HF, hydrogen peroxide, and deionized water. Different electrical and optical characteristics were obtained according to the shapes and sizes of the SiNWs, which implies that they can serve specific purposes according to their types.

• Journal of Convergence for Information Technology
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• v.7 no.5
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• pp.123-128
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• 2017

Nanostructured materials have received attention due to their unique electronic, optical, optoelectrical, and magnetic properties as a results of their large surface-to-volume ratio and quantum confinement effects. Thermal chemical vapor deposition process has attracted much attention due to the synthesis capability of various structured nanomaterials during the growth of nanostructures. In this study, silicon oxide nanowires were grown on Si\$SiO_2$(300 nm)\Pt(5~40 nm) substrates by two-zone thermal chemical vapor deposition with the source material $TiO_2$ powder via vapor-liquid-solid process. The morphology and crystallographic properties of the grown silicon oxide nanowires were characterized by field-emission scanning electron microscope and transmission electron microscope. As results of analysis, the morphology, diameter and length, of the grown silicon oxide nanowires are depend on the thickness of the catalyst films. The grown silicon oxide nanowires exhibit amorphous phase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.23-23
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• 2009

Recently, the nanowire configuration of GST showed nanosecond-level phase switch at very low power dissipation, suggesting that the nanowires could be ideal for data storage devices. In spite of many advantages of IST materials, their feasibility in both thin films and nanowires for electronic memories has not been extensively investigated. The synthesis of the chalcogenide nanowires was mainly preformed via a vapor transport process such as vapor-liquid-solid (VLS) growth at a high temperature. However, in this study, IST nanowires as well as thin films were prepared at a low temperature (${\sim}250^{\circ}C$) by metal organic chemical vapor deposition(MOCVD) method, which is possible for large area deposition. The IST films and/or nanowires were selectively grown by a control of working pressure at a constant growth temperature by MOCVD. In-Sb-Te NWs will be good candidate materials for high density PRAM applications. And MOCVD system is powerful for applying ultra scale integration cell.

• Applied Microscopy
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• v.47 no.1
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• pp.13-18
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• 2017

High-quality graphene was synthesized on Cu foil and $Fe_2O_3$ film using $CH_4$ gas via inductively-coupled plasma chemical vapor deposition (ICPCVD). The graphene film was formed on $Fe_2O_3$ at a temperature as low as $700^{\circ}C$. Few-layer graphene was formed within a few seconds and 1 min on Cu and $Fe_2O_3$, respectively. With increasing growth time and plasma power, the graphene thickness was controllably reduced and ultimately self-limited to a single layer. Moreover, the crystal quality of graphene was constantly enhanced. Understanding the ICPCVD growth kinetics that are critically affected by ICP is useful for the controllable synthesis of high-quality graphene on metals and oxides for various electronic applications.

• Korean Journal of Materials Research
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• v.19 no.10
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• pp.522-526
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• 2009

Graphene has been effectively synthesized on Ni/SiO$_2$/Si substrates with CH$_4$ (1 SCCM) diluted in Ar/H$_2$(10%) (99 SCCM) by using an inductively-coupled plasma-enhanced chemical vapor deposition. Graphene was formed on the entire surface of the 500 nm thick Ni substrate even at 700 $^{\circ}C$, although CH$_4$ and Ar/H$_2$ gas were supplied under plasma of 600 W for 1 second. The Raman spectrum showed typical graphene features with D, G, and 2D peaks at 1356, 1584, and 2710 cm$^{-1}$, respectively. With increase of growth temperature to 900 $^{\circ}C$, the ratios of the D band intensity to the G band intensity and the 2D band intensity to the G band intensity were increased and decreased, respectively. The results were strongly correlated to a rougher and coarser Ni surface due to the enhanced recrystallization process at higher temperatures. In contrast, highquality graphene was synthesized at 1000 $^{\circ}C$ on smooth and large Ni grains, which were formed by decreasing Ni deposition thickness to 300 nm.