Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2009.11a
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- Pages.23-23
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- 2009
Characterization of InSbTe nanowires grown directly by MOCVD for high density PRAM application
- Ahn, Jun-Ku (School of Nano Science and Technology, Chungnam National University) ;
- Park, Kyoung-Woo (School of Nano Science and Technology, Chungnam National University) ;
- Jung, Hyun-June (School of Nano Science and Technology, Chungnam National University) ;
- Park, Yeon-Woong (School of Nano Science and Technology, Chungnam National University) ;
- Hur, Sung-Gi (School of Nano Science and Technology, Chungnam National University) ;
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Yoon, Soon-Gil
(Graduate of Analytical Science and Technology (GRAST), Chungnam National University)
- Published : 2009.11.12
Abstract
Recently, the nanowire configuration of GST showed nanosecond-level phase switch at very low power dissipation, suggesting that the nanowires could be ideal for data storage devices. In spite of many advantages of IST materials, their feasibility in both thin films and nanowires for electronic memories has not been extensively investigated. The synthesis of the chalcogenide nanowires was mainly preformed via a vapor transport process such as vapor-liquid-solid (VLS) growth at a high temperature. However, in this study, IST nanowires as well as thin films were prepared at a low temperature (