• Journal of the Korean Vacuum Society
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• v.18 no.3
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• pp.151-163
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• 2009

The domestic development status of Inductively Coupled Plasma (ICP) simulator which is based on fluid model is explained. As each part which composes the unified simulator, electron heating module, charged and neutral particle transport module, surface reaction module including a sheath model, and GUI (Graphic User Interface) with pre- and post-processors are described in order. Also, we present data base status of chemical reaction and physical collision, which has been applied to the recently developed simulator until now. Lastly, some future plans of development are suggested.

• Proceedings of the Korean Vacuum Society Conference
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• 1997.02a
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• pp.98-99
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• 1997

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.287-292
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• 2010

Effect of conductance factors on performance of vacuum system was simulated for optimum design of vacuum system. In this investigation, the feasibility of modeling mechanism for VacSim$^{Multi}$ simulator was proposed. Application specific design of vacuum system is required to meet the particular process conditions for various industrial implementations of vacuum equipments. Geometry and length, diameter of exhaust pipeline were modeled as simulation modeling variables for conductance effects. Series vacuum system was modeled and simulated with varied dimensions and structures of exhaust pipeline. Variation of pipeline diameter showed the more significant effects on vacuum characteristics than that of pipeline length variations. It was also observed that the aperture structure of pipeline had the superior vacuum characteristics among the modeled systems.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.449-457
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• 2011

Effect of pump combinations on the vacuum characteristics of vacuum system was simulated for optimum design of system. In this investigation, the feasibility of modelling mechanism for VacSimMulti simulator was proposed. Simulation results of various pumping combinations showed the possibilities and reliabilities of simulation for the performance of vacuum system in specific semiconductor processing. Simulation of roughing pump presented the expected pumping behaviors based on commercial specifications of employed pumps. Application of booster pump exhibited the high pumping efficiency for middle vacuum range. Combinations of optimum backing pump for diffusion and turbo vacuum system were obtained. And, the predictable characteristics of process application of both simulated systems were also acquired.

• Journal of the Korean Vacuum Society
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• v.1 no.2
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• pp.269-276
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• 1992

경계 요소법을 이용하여 Finely-focused ion beam 시스템을 위한 전계형 시뮬레 이터를 개발하였다. 경계 요소법을 시뮬레이터에 적용함으로써 기존의 유한 요소법, 차분근 사법에서는 피할 수 없었던 내부격자망 구성이 불필요하게 됨에 따라 계산속도를 현저히 줄 일 뿐만 아니라 불규칙 경계에 대한 요소분할이 가능하게 되어 최적렌즈구조 설계의 새로운 요소인 전극구조의 모양을 자유롭게 시뮬레이션 할 수 있게 되었다. 또한 개발된 시뮬레이 터를 이용하여 최적조건을 만족하는 구조를 제안한다. 이때 렌즈설계조건은 beam half-angle 3.0 mrad, working distance 50mm, 빔에너지 퍼짐 (beam energy spread) 10eV, 가속에너지 35keV이다.

• Journal of Korean Vacuum Science & Technology
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• v.1 no.1
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• pp.1-12
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• 1997

A new three-dimensional (3D) Monte Carlo ion implantation simulator, TRICSI, has been developed to investigate 3D mask effects in the typical mask structure for ion implantation into crystalline silicon. We present the mask corner and mask size effects of implanted boron range profiles, and also show the calculated damage distributions by applying the modified Kinchin-Pease equation in the single-crystal silicon target. The simulator calculates accurately and efficiently the implanted-boron range profiles under the relatively large implanted area, using a newly developed search algorithm for the collision partner in the single-crystal silicon. All of the typical implant parameters such as dose, tilt and rotation angles, in addition to energy can be used for the 3D simulation of ion implantation.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.196-196
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• 2000

본 연구에서는 다용도 구동 모사 장치인 VDS(versatile driving simulator)를 이용하여 기존에 상용되고 있는 AC-PDP의 파형 분석 및 구동 파형 최적화를 위한 기초 연구 결과들을 소개한다. 일반적으로 PDP, FED, LCD 등의 평판 표시장치들은 패널 자체의 특성 뿐만 아니라 패널에 인가되는 전압 파형과 구동 방법에 따라 효율 및 화질을 포함한 전체 성능이 크게 좌우된다. 따라서 각 표시장치에 가장 적합한 파형과 구동법을 연구하는 것은 매우 중요한 과제이다. 특히 PDP의 경우 구동 파형이 효율과 화질에 미치는 영향은 절대적이라 해도 과언이 아니다. 그러나 이들 평판 표시장치를 구동하는 상용회로들은 스위칭 회로를 이용한 것이 대부분으로 한 개의 파형 당 한 부분의 회로가 담당하는 형태로 되어 있다. 즉 자유도가 매우 제한되어 있다. 따라서 파형 변화에 따른, 그리고 구동법의 변화에 따른 연구를 하기 위해서는 많은 인력과 시간이 소요된다는 어려움이 있다. 이러한 문제점을 해소하기 위하여 새로운 개념의 구동모사 장치 VDS(versatile driving simulator)를 개발하였다. VDS 시스템은 디지털 기술과 아날로그 기술을 통합하여 제작된 구동 모사장치로써 평판 표시 장치에 인가되는 실제 파형 및 구동법을 손쉽게 변화시킬 수 있으며 이의 결과를 빠르게 확인할 수 있도록 설계되었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.454-454
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• 2012

Magnetron sputtering에서, 영구자석의 자속은 target 표면 가까이에 전자를 구속한다. 구속된 전자는 Ar중성기체와 충돌하여 Ar이온을 발생시킬 수 있으므로, target 근처에서의 플라즈마 밀도를 높여, 자석이 없을 때보다 낮은 압력 또는 낮은 전압에서 방전할 수 있다. 구속 전자가 밀집된 공간에서 sputtering 현상이 주로 발생하기 때문에, planar target을 사용할 경우에는 target이 불균일하게 식각되어 target의 사용효율이 좋지 못하다. 이에 대한 한 가지 대안은 target을 원통형으로 만들어 회전시키는 것이다. Cylindrical target 의 내부에 위치한 영구자석은 고정시키고, target만을 회전시키면 비교적 균일하게 식각되므로 target의 사용효율을 높일 수 있다. 본 연구에서는 기존의 planar target에 대한 Particle-In-Cell Simulation을 Cylindrical target 에 적용시키기 위한 방법을 알아본다. 또한, 개발된 Simulator를 이용하여, Sputtering 조건의 변화에 대한 I-V curve의 변화를 살펴본다.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.12 no.2
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• pp.77-83
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• 2012

Effect of valve conductance on performance of vacuum system was simulated for optimum design of vacuum system. In this investigation, the feasibility of modeling mechanism for VacSimMulti simulator was proposed. Application specific design of vacuum system is required to meet the particular process conditions for various industrial implementations of vacuum equipments. Geometry and length, diameter of vacuum valve were modeled as simulation modeling variables for conductance effects. Series vacuum system was modeled and simulated with varied dimensions and structures of exhaust valves. Variation of valve diameter showed the more significant effects on vacuum characteristics than that of pipeline length variations. It was also observed that the aperture structure of valve had the superior vacuum characteristics among the modeled systems.

• International journal of advanced smart convergence
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• v.7 no.4
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• pp.84-91
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• 2018

In this paper, we simulated three different HV systems and analyzed of each vacuum characteristics by VacCAD modelling. In each of modelled vacuum systems, selection of chamber materials, combination of rough pump with high vacuum pump and conductance of roughing line (diameter and length) were proposed as system variables. In the modelling of chamber materials, the pumping times to ultimate pressures of different chamber materials (stainless steel, aluminum) were compared by the variations of chamber volume. In this model, the effects of outgassing dependent on the chamber materials was also simulated and aluminum was estimated to optimum chamber materials. It was also obtained that modelling of vane and roots pump with diffusion pump and diameter, length of $50{\times}250$ [mm]roughing line were characterized as optimum variables to reach the ultimate pressure of 10E-7 [mbar] most effectively. Optimum design factors for vacuum characteristics of modelled vacuum system were achieved by VacCAD simulations. Feasibility of VacCAD as vacuum simulator was verified and applications of VacCAD expected to be increased to fields in vacuum needed.