• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.565-566
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• 2008

The high efficiency power management IC(PMIC) for Moblie application is proposed in this paper. PMIC is controlled with PWM control method in order to have high power efficiency at high current level. The saw-tooth generator is made to have 1.2 MHz oscillation frequency and full range of output swing from ground to supply voltage(VDD:3.3V). The comparator is designed with two stage OP amplifier. And the error amplifier has 70dB DC gain and $64^{\circ}$ phase margin. DC-DC converter, based on Voltage-mode PWM control circuits, achieved the high efficiency near 95% at 100mA output current. DC-DC converter is designed with LDO in stand-by mode which fewer than 1mA for high efficiency.

• International journal of advanced smart convergence
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• v.9 no.1
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• pp.172-176
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• 2020

The implementation of a low phase noise voltage controlled oscillator (VCO) is important for the signal integrity of wireless communication terminal. A low phase noise wideband VCO for a wireless local area network (WLAN) application is presented in this paper. A 6-bit coarse tune capacitor bank (capbank) and a fine tune varactor are used in the VCO to cover the target band. The simulated oscillation frequency tuning range is from 8.6 to 11.6 GHz. The proposed VCO is desgned using 65 nm CMOS technology with a high quality (Q) factor bondwire inductor. The VCO is biased with 1.8 V VDD and shows 9.7 mA current consumption. The VCO exhibits a phase noise of -122.77 and -111.14 dBc/Hz at 1 MHz offset from 8.6 and 11.6 GHz carrier frequency, respectively. The calculated figure of merit(FOM) is -189 dBC/Hz at 1 MHz offset from 8.6 GHz carrier. The simulated results show that the proposed VCO performance satisfies the required specification of WLAN standard.

• Journal of IKEEE
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• v.7 no.1 s.12
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• pp.56-62
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• 2003

In this paper, we designed a adder and a multiplier using current mode T-gate on $GF(2^2)$. The T-gate is consisted of current mirror and pass transistor, the designed 4-valued T-gate used adder and multiplier on $GF(2^2)$. We designed its under 1.5um CMOS standard technology. The unit current of the circuits is 15㎂, and power supply is 3.3V VDD. The proposed current mode CMOS operator have a advantage of module by T-gate`s arrangement, and so we easily implement multi-valued operator.

• Journal of Biomedical Engineering Research
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• v.23 no.6
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• pp.477-484
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• 2002

A pacemaker autosense algorithm with dual thresholds. one for noise or tachyarrhythmia detection (noise threshold, NT) and the other for intrinsic beat detection (sensing threshold. ST), was developed to improve the sensing performance in single pass VDD electrograms. unipolar electrograms, or atrial fibrillation detection. When a deflection in an electrogram exceeds the NT (defined as 50% of 57), the autosense algorithm with dual thresholds checks if the deflection also exceeds the ST. If it does, the autosense algorithm calculates the signal to noise ratio (SNR) of the deflection to the highest deflection detected by NT but lower than ST during the last cardiac cycle. If the SNR 2, the autosense algorithm declares an intrinsic beat detection and calculates the next ST based on the three most recent intrinsic peaks. If the SNR $\geq$2, the autosense algorithm checks the number of deflections detected by NT during the last cardiac cycle in order to determine if it is a noise detection or tachyarrhythmia detection. Usually the autosense algorithm tries to set the 57 at 37.5% of the average of the three intrinsic beats, although it changes the percentage according to event classifications. The autosense algorithm was tested through computer simulation of atrial electrograms from 5 patients obtained during EP study, to simulate a worst sensing situation. The result showed that the ST levels for autosense algorithm tracked the electrogram amplitudes properly, providing more noise immunity whenever necessary. Also, the autosense algorithm with dual thresholds achieved sensing performance as good as the conventional fixed sensitivity method that was optimized retrospectively.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.4
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• pp.528-533
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• 2016

A low voltage high PSRR CMOS Bandgap circuit capable of generating a stable voltage of less than 1 V (0.8 V and 0.5 V) robust to Process, Voltage and Temperature (PVT) variations is proposed. The high PSRR of the circuit is guaranteed by a low-voltage current mode regulator at the central aspect of the bandgap circuitry, which isolates the bandgap voltage from power supply variations and noise. The isolating current mirrors create an internal regulated voltage $V_{reg}$ for the BG core and Op-Amp rather than the VDD. These current mirrors reduce the impact of supply voltage variations. The proposed circuit is implemented in a $0.35{\mu}m$ CMOS technology. The BGR circuit occupies $0.024mm^2$ of the die area and consumes $200{\mu}W$ from a 5 V supply voltage at room temperature. Experimental results demonstrate that the PSRR of the voltage reference achieved -118 dB at frequencies up to 1 kHz and -55 dB at 1 MHz without additional circuits for the curvature compensation. A temperature coefficient of $60 ppm/^{\circ}C$ is obtained in the range of -40 to $120^{\circ}C$.

• The KIPS Transactions:PartA
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• v.14A no.3 s.107
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• pp.147-150
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• 2007

This paper describes a new low-swing inverter for low power consumption. To reduce a power consumption, an output voltage swing is in the range from 0 to VDD-2VTH. This can be done by the inverter structure that allow a full swing or a swing on its input terminal without leakage current. Using this low-swing voltage technology, we proposed a low-power 16$\times$16 bit parallel multiplier. The proposed circuits are designed with Samsung 0.35$\mu$m standard CMOS process at a 3.3V supply voltage. The validity and effectiveness are verified through the HSPICE simulation.. Compared to the previous works, this circuit can reduce the power consumption rate of 17.3% and the power-delay product of 16.5%.

• Journal of the Korean Society of Industry Convergence
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• v.24 no.5
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• pp.635-639
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• 2021

As times goes by, a ton of electric devices have been developing. Nowadays, there are many personal electric goods that are connected each other and have important private information such as identification, account number, passwords, and so on. As many people own at least one electric device, security of the electric devices became significant. To prevent leakage of the information, study of Chaotic TRNG, "Chaotic True Random Number Generator", protecting the information by generating random numbers that are not able to be expected, is essential. In this paper, A chaotic TRNG is introduced is simulated. The proposed Chaotic TRNG is simulated with Virtuoso &, a circuit design program of Cadence that is a software company. For simulating the mentioned Chaotic TRNG, setting values, 0V low and 3V high on Vpulse, 1.2V on V-ref, 3.3V on VDD, and 0V on VSS, are used.

• Proceedings of the Korea Information Processing Society Conference
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• 2010.11a
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• pp.1760-1762
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• 2010

본 논문에서 3치가산기와 승산기(multiplier)는 전류모드 CMOS에 의해서 구현된다. 첫째, 3치 T-gate를 집적회로 설계의 유효 가용성을 갖고 있는 전류모드 CMOS를 이용하여 구현한다. 둘째, 3치 T-gates를 이용해 회로가 유한체 GF (3)에 대하여 2변수 3치 가산표 (2-variable ternary addition table) 및 구구표 (multiplication table)가 실현되도록 구현한다. 마지막으로, 이러한 동작 회로들은 1.5 CMOS 표준 기술과 $15{\mu}A$ 단위전류(unit current) 및 3.3V 소스 전압 (VDD voltage)에 의해 활성화 된다. 활성화 결과는 만족할 만한 전류 특성을 나타냈다. 전류 모드 CMOS에 의하여 실행되는 3치가산기 및 승산기는 단순하며 와이어 라우팅(wire routing)에 대하여 정규적이고, 또한 셀 배열 (cell array)과 함께 모듈성 (modularity)의 특성을 갖고 있다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.8
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• pp.10-15
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• 2012

This letter proposes a low-leakage SRAM using power-gating and voltage-level control. The power-gating scheme significantly reduces leakage power by shutting off the power supply to blank memory cell blocks. The voltage-level control scheme saves leakage power by raising the ground line voltage of SRAM cells and word line decoders in data-stored memory cell blocks. A $4K{\times}8bit$ SRAM chip was fabricated using a 1.2V $0.13{\mu}m$ CMOS process. The leakage powers are $1.23{\sim}9.87{\mu}W$ and $1.23{\sim}3.01{\mu}W$ for 0~100% memory usage in active and sleep modes, respectively. During the sleep mode, the proposed SRAM consumes 12.5~30.5% leakage power compared to the conventional SRAM.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.37 no.2
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• pp.29-36
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• 2000

The principle and design of two-stage CMOS operational amplifier with rail-to-rail input and class-AB output stage is presented. The rail-to-rail input stage shows almost constant transconductance independent of the common mode input voltage range in global transistor operation region. This new technique does not make use of accurate current-voltage relationship of MOS transistors. Hence it was achieved by using simple linear relationship of currents. The simulated transconductance variation using SPICE is less the 4.3%. The proposed global two-stage opamp can operate both in strong inversion and in weak inversion. Class AB output stage proposed also has a full output voltage swing and a well-defined quiescent current that does not depend on power supply voltage. Since feedback class- AB control is used, it is expected that this output stage can be operating in extremely low voltage. The variation of DC-gain and unity-gain frequency is each 4.2% and 12%, respectively.