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http://dx.doi.org/10.5573/JSTS.2016.16.4.528

Accurate Sub-1 V CMOS Bandgap Voltage Reference with PSRR of -118 dB  

Abbasizadeh, Hamed (College of Information and Communication Engineering, Sungkyunkwan University)
Cho, Sung-Hun (College of Information and Communication Engineering, Sungkyunkwan University)
Yoo, Sang-Sun (Korea Advanced Institute of Science and Technology (KAIST))
Lee, Kang-Yoon (College of Information and Communication Engineering, Sungkyunkwan University)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.16, no.4, 2016 , pp. 528-533 More about this Journal
Abstract
A low voltage high PSRR CMOS Bandgap circuit capable of generating a stable voltage of less than 1 V (0.8 V and 0.5 V) robust to Process, Voltage and Temperature (PVT) variations is proposed. The high PSRR of the circuit is guaranteed by a low-voltage current mode regulator at the central aspect of the bandgap circuitry, which isolates the bandgap voltage from power supply variations and noise. The isolating current mirrors create an internal regulated voltage $V_{reg}$ for the BG core and Op-Amp rather than the VDD. These current mirrors reduce the impact of supply voltage variations. The proposed circuit is implemented in a $0.35{\mu}m$ CMOS technology. The BGR circuit occupies $0.024mm^2$ of the die area and consumes $200{\mu}W$ from a 5 V supply voltage at room temperature. Experimental results demonstrate that the PSRR of the voltage reference achieved -118 dB at frequencies up to 1 kHz and -55 dB at 1 MHz without additional circuits for the curvature compensation. A temperature coefficient of $60 ppm/^{\circ}C$ is obtained in the range of -40 to $120^{\circ}C$.
Keywords
Bandgap reference (BGR); high PSRR; low voltage; line regulation; current-mode regulator;
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