• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.70-70
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• 2009

In this paper, we proposed 2500V Non punch-through(NPT) Insulated gate bipolar transistor(IGBT) for high voltage industry application. we carried out optimal simulation for high efficiency of 2500V NPT IGBT according to size of device. In results, we obtaind design parameter with 375um n-drift thickness, 15um gate length, and 8um emitter windows. After we simulate with optimal parameter, we obtained 2840V breakdown voltage and 3.4V Vce,sat. These design and process parameter will be used designing of more 2000V NPT IGBT devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.273-279
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• 2010

In this paper, we proposed 2500 V Non punch-through(NPT) Insulated gate bipolar transistor(IGBT) for high voltage industry application. we carried out optimal simulation for high efficiency of 2500 V NPT IGBT according to size of device. In results, we obtaind design parameter with 375 um n-drift thickness, 15 um gate length, and 8um emitter windows. After we simulate with optimal parameter, we obtained 2840 V breakdown voltage and 3.4V Vce,sat. These design and process parameter will be used designing of more 2000 V NPT IGBT devices.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.563-564
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• 2008

This paper presents a new Insulated Gate Bipolar Transistor(IGBT) for power switching device based on Non Punch Through(NPT) IGBT structure. The proposed structure has adding N+ beside the P-base region of the conventional IGBT structure. The proposed device has faster turn-off time and lower forward conduction loss than the conventional IGBT structure.

• Journal of IKEEE
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• v.11 no.4
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• pp.247-251
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• 2007

The recessed gate IGBT has a lower on-state voltage drop compared with the DMOS IGBT, because there is no JFET resistance. But because of the electric field concentration in the corner of the gate edge, the breakdown voltage decreases. This paper is about the new structure to effectively improve the Vce(sat) voltage without breakdown voltage drop in 1700V NPT type recessed gate IGBT with p floating shielding layer. For the fabrication of the recessed gate IGBT with p floating shielding layer, it is necessary to perform the only one implant step for the shielding layer. Analysis on the Breakdown voltage shows the improved values compared to the conventional recessed gate IGBT structures. The result shows the improvement on Breakdown voltage without worsening other characteristics of the device. The electrical characteristics were studied by MEDICI simulation results.

• Journal of the Korean Institute of Gas
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• v.17 no.3
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• pp.1-7
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• 2013

The influence of the over-pressure caused by Explosion in gas station was calculated by using the Hopkinson's scaling law and injury effect by accident to buildings and human bodies was estimated by applying the probit model. As a result, the injury estimation was conducted by using the probit model for leakage 10% of 20ton storage tank. The separate distances from LPG station for building(damage) and human(lung hemorrhage to death) are 260 and 30 meters, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.759-762
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• 2000

Present transistors which have vertical structure show increased parasitic capacitance characteristics in accordance with the increase of non-active base area and collector area, consequently have disadvantage for high speed switching performance. In this paper, a horizontal structure transistor which has minimized parasitic capacitance in virtue of SDB(Silicon Direct Bonding) wafer and oxide sidewall isolation utilizing silicon trench technology is presented. Its structural characteristics were designed by ATHENA(SUPREM4), the process simulator from SILVACO International, and its performance was proven by ATLAS, the device simulator from SILVACO International. The performance of the proposed horizontal structure transistor was certified through the VCE-lC characteristics curve, $h_{FE}$ -IC characteristics, and GP-plot.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.10
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• pp.794-798
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• 2011

This paper was carried out design of 1,700 V Base Resistance Thyristor for fabrication. We decided conventional BRT (base resistance thyristor) device and Trench Gate type one for design. we carried out device and process simulation with T-CAD tools. and then, we have extracted optimal device and process parameters for fabrication. we have analysis electrical characteristics after simulations. As results, we obtained 2,000 V breakdown voltage and 3.0 V Vce,sat. At the same time, we carried out field ring simulation for obtaining high voltage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.361-365
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• 2019

Although there is no strict definition of a power semiconductor device, a general description is a semiconductor that has capability to control more than 1 W of electricity. Integrated gate bipolar transistors (IGBTs), which are power semiconductors, are widely used in voltage ranges above 300 V and are especially popular in high-efficiency, high-speed power systems. In this paper, the size of the gate was adjusted to test the variation in the yield voltage characteristics by measuring the electric field concentration under the trench gate. After the experiment Synopsys' TCAD was used to analyze the efficiency of threshold voltage, on-state voltage drop, and breakdown voltage by measuring the P- region and its size under the gate.

• Journal of Nutrition and Health
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• v.42 no.8
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• pp.673-681
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• 2009

Diabetes mellitus is a multifactorial disease. Particularly, diabetic nephropathy is a serious complication for diabetic patients, yet the precise mechanisms that underline the initial stage of diabetic renal inflammation remain unknown. However, oxidative stress induced by hyperglycemia in diabetes is implicated in diabetic renal disease. We hypothesized that dietary supplementation of antioxidants either VCE (0.5% VC + 0.5% VE) or Comb (0.5% VC + 0.5% VE + 2.5% N-acetylcysteine) improves acute diabetic renal inflammation through modulation of blood glucose levels and antioxidant and anti-inflammatory responses. Experimental animals (5.5 weeks old female ICR) used were treated with alloxan (180 mg/kg) once. When fasting blood glucose levels were higher than 250 mg/dL, mice were divided into 3 groups fed different levels of antioxidant supplementation, DM (diabetic mice fed AIN 93G purified rodent diet); VCE (diabetic mice fed 0.5% vitamin C and 0.5% vitamin E supplemented diet); Comb (diabetic mice fed 0.5% vitamin C, 0.5% vitamin E and 2.5% N-acetylcysteine supplemented diet), for 10 days and then sacrificed. Body weights were measured once a week and blood glucose levels were monitored twice a week. Lipid peroxidation products, thiobarbituric acid reacting substances were measured in kidney. NF-${\kappa}B$ activation was indirectly demonstrated by pI${\kappa}B$-${\alpna}$ and expressions of selective inflammatory and oxidative stress markers including antioxidant enzymes were also determined. Dietary antioxidant supplementation improved levels of blood glucose as well as kidney lipid peroxi-dation. Dietary antioxidant supplementation improved NF-${\kappa}B$ activation and protein expression of HO-1, but not mRNA expression levels in diabetic mice fed Comb diet. In contrast, the mRNA and protein expression of CuZnSOD was decreased in diabetic mice fed Comb diet. However, antioxidant supplementation did not improve mRNA and protein expressions of IL-$1{\beta}$ and MnSOD in diabetic mice. These findings demonstrate that acute diabetic renal inflammation was associated with altered inflammatory and antioxidant responses and suggest that antioxidant cocktail supplementation may have beneficial effects on early stage of diabetic nephropathy through modulation of blood glucose levels and antioxidant enzyme expressions.

• Korean Journal of Food Science and Technology
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• v.46 no.2
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• pp.237-244
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• 2014

The total phenolics, total flavonoids, and antioxidant capacities of ten commercial products of Japanese apricot (maesil) were evaluated, including four kinds of alcoholic drinks, two kinds of soft drinks, and four kinds of concentrate found in the Korean market. The daily per capita consumption (g/capita/day) of each product was calculated from in the existing dataset of the Korea National Health and Nutrition Examination Survey in 2010. Using the combined datasets indicated above, the daily per capita intake of total phenolics from maesil product consumption was found to be 1.05 mg gallic acid equivalents. The daily per capita intake of total flavonoids was determined to be 0.13 mg catechin equivalents, and the daily per capita intake of antioxidant capacities were measured at 0.70 mg vitamin C equivalents (1,1-diphenyl-2-picrylhydrazyl assay), and at 1.04 mg vitamin C equivalents (2,2'-azino-bis(3-ethylbenzthiazoline-6-sulfonic acid) assay). The daily per capita intakes of total phenolics, total flavonoids, and antioxidant capacities were influenced by the daily quantity of consumption of maesil products, as well as their compositional contents.