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http://dx.doi.org/10.4313/JKEM.2011.24.10.794

Study on Design and Electric Characteristics of MOS Controlled Thyristor for High Breakdown Voltage  

Hong, Young-Sung (Department of Photovoltaic Engineering, Far East University)
Chung, Hun-Suk (Department of Photovoltaic Engineering, Far East University)
Jung, Eun-Sik (Department of Electrical Engineering, Korea University)
Kang, Ey-Goo (Department of Photovoltaic Engineering, Far East University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.24, no.10, 2011 , pp. 794-798 More about this Journal
Abstract
This paper was carried out design of 1,700 V Base Resistance Thyristor for fabrication. We decided conventional BRT (base resistance thyristor) device and Trench Gate type one for design. we carried out device and process simulation with T-CAD tools. and then, we have extracted optimal device and process parameters for fabrication. we have analysis electrical characteristics after simulations. As results, we obtained 2,000 V breakdown voltage and 3.0 V Vce,sat. At the same time, we carried out field ring simulation for obtaining high voltage.
Keywords
Base resistance thyristor; Breakdown voltage; Power devices; On resistance;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
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