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http://dx.doi.org/10.4313/JKEM.2019.32.5.361

Study on Electric Characteristics of IGBT Having P Region Under Trench Gate  

Ann, Byoung Sub (Department of Energy IT Engineering, Far East University)
Yuek, Jinkeoung (Department of General Education, Far East University)
Kang, Ey Goo (Department of Energy IT Engineering, Far East University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.32, no.5, 2019 , pp. 361-365 More about this Journal
Abstract
Although there is no strict definition of a power semiconductor device, a general description is a semiconductor that has capability to control more than 1 W of electricity. Integrated gate bipolar transistors (IGBTs), which are power semiconductors, are widely used in voltage ranges above 300 V and are especially popular in high-efficiency, high-speed power systems. In this paper, the size of the gate was adjusted to test the variation in the yield voltage characteristics by measuring the electric field concentration under the trench gate. After the experiment Synopsys' TCAD was used to analyze the efficiency of threshold voltage, on-state voltage drop, and breakdown voltage by measuring the P- region and its size under the gate.
Keywords
Trench gate; IGBT; Vth; BV; Vce-sat;
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Times Cited By KSCI : 5  (Citation Analysis)
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