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http://dx.doi.org/10.4313/JKEM.2010.23.4.273

Study on Design of 2500 V NPT IGBT  

Kang, Ey-Goo (극동대학교 컴퓨터정보표준학부)
Ahn, Byoung-Sub (극동대학교 컴퓨터정보표준학부)
Nam, Tae-Jin (극동대학교 컴퓨터정보표준학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.23, no.4, 2010 , pp. 273-279 More about this Journal
Abstract
In this paper, we proposed 2500 V Non punch-through(NPT) Insulated gate bipolar transistor(IGBT) for high voltage industry application. we carried out optimal simulation for high efficiency of 2500 V NPT IGBT according to size of device. In results, we obtaind design parameter with 375 um n-drift thickness, 15 um gate length, and 8um emitter windows. After we simulate with optimal parameter, we obtained 2840 V breakdown voltage and 3.4V Vce,sat. These design and process parameter will be used designing of more 2000 V NPT IGBT devices.
Keywords
Insulated gate bipolar transistor; Breakdown voltage; On resistance;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
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