1 |
N. Thapar and B. J. Baligar, "An experimental
evluation of the on-state performance of
trench IGBT designs", SSE, Vol. 45, No. 5,
p. 771, 1998
|
2 |
E. G. Kang and M. Y. Sung, "A novel
lateral trench electrode IGBT for super
electrical characteristics", J. KIEEME(in
Korean), Vol. 15, No. 9, p. 758, 2002.
|
3 |
K. Sheng, S. J. Finney, and B. W. Williams,
"Improved understand-switched thyristors",
in Proceedings of the ISPSD, p. 48, 1994.
|
4 |
S. Sridhar and B. J. Baliga, "The dual gate
emitter switched thyristor", IEEE EDL, Vol.
17, p. 25, 1996.
DOI
|
5 |
N. Iwamuro and A. Okamoto, "Forward biased
safe operating area of emitter switched thyristor",
IEEE Trans. ED, Vol. 42, p. 334, 1995.
DOI
ScienceOn
|