Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Study on Thermal Characteristics of IGBT

IGBT의 열 특성에 관한 연구

  • 강이구 (극동대학교 컴퓨터정보표준학부) ;
  • 안병섭 (극동대학교 컴퓨터정보표준학부) ;
  • 남태진 (극동대학교 컴퓨터정보표준학부)
  • Published : 2009.11.12
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Abstract

In this paper, we proposed 2500V Non punch-through(NPT) Insulated gate bipolar transistor(IGBT) for high voltage industry application. we carried out optimal simulation for high efficiency of 2500V NPT IGBT according to size of device. In results, we obtaind design parameter with 375um n-drift thickness, 15um gate length, and 8um emitter windows. After we simulate with optimal parameter, we obtained 2840V breakdown voltage and 3.4V Vce,sat. These design and process parameter will be used designing of more 2000V NPT IGBT devices.

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