Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2008.06a
- /
- Pages.563-564
- /
- 2008
Low on Resistance Characteristic with 2500V IGBTs
낮은 온-저항 특성을 갖는 2500V급 IGBTs
- Shin, Samuell (Department of Electronic Engineering, Seokyeong University) ;
- Son, Jung-Man (Department of Electronic Engineering, Seokyeong University) ;
- Ha, Ka-San (Department of Electronic Engineering, Seokyeong University) ;
-
Won, Jong-Il
(Department of Electronic Engineering, Seokyeong University)
;
- Jung, Jun-Mo (Department of Electronic Engineering, Seokyeong University) ;
- Koo, Yong-Seo (Department of Electronic Engineering, Seokyeong University)
- 신사무엘 (서경대학교 전자공학과) ;
- 손정만 (서경대학교 전자공학과) ;
- 하가산 (서경대학교 전자공학과) ;
-
원종일
(서경대학교 전자공학과)
;
- 정준모 (서경대학교 전자공학과) ;
- 구용서 (서경대학교 전자공학과)
- Published : 2008.06.18
Abstract
This paper presents a new Insulated Gate Bipolar Transistor(IGBT) for power switching device based on Non Punch Through(NPT) IGBT structure. The proposed structure has adding N+ beside the P-base region of the conventional IGBT structure. The proposed device has faster turn-off time and lower forward conduction loss than the conventional IGBT structure.