• 대한수학회논문집
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• 제19권2호
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• pp.355-373
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• 2004

An extended directed triple system of order v, denoted by EDTS(v), is a pair (V, (equation omitted)) where V is a v-set and (equation omitted) is a set of transitive triples of elements of V such that every ordered pair of elements of V is contained in exactly one member of (equation omitted). We obtain a necessary and sufficient condition for the existence of cyclic EDTS(v)s, and when k=1 or 2, we also obtain a necessary and sufficient condition for the existence of k-rotational EDTS(v)s.

• 대한수학회논문집
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• 제32권2호
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• pp.435-445
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• 2017

Let D be a directed graph with p vertices and q arcs. A vertex out-magic total labeling is a bijection f from $V(D){\cup}A(D){\rightarrow}\{1,2,{\ldots},p+q\}$ with the property that for every $v{\in}V(D)$, $f(v)+\sum_{u{\in}O(v)}f((v,u))=k$, for some constant k. Such a labeling is called a V-super vertex out-magic total labeling (V-SVOMT labeling) if $f(V(D))=\{1,2,3,{\ldots},p\}$. A digraph D is called a V-super vertex out-magic total digraph (V-SVOMT digraph) if D admits a V-SVOMT labeling. In this paper, we provide a method to find the most vital nodes in a network by introducing the above labeling and we study the basic properties of such labelings for digraphs. In particular, we completely solve the problem of finding V-SVOMT labeling of generalized de Bruijn digraphs which are used in the interconnection network topologies.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1103-1106
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• 2006

We have presented a comprehensive study on threshold voltage $(V_{th})$ control of organic thin-film transistors (OTFTs) with dual-gate structure. The fabrication of dual-gate pentacene OTFTs using plasma-enhanced atomic layer deposited (PEALD) 150 nm thick $Al_2O_3$ as a bottom gate dielectric and 300 nm thick parylene or PEALD 200 nm thick $Al_2O_3$ as both a top gate dielectric and a passivation layer is reported. The $V_{th}$ of OTFT with 300 nm thick parylene as a top gate dielectric is changed from 4.7 V to 1.3 V and that with PEALD 200 nm thick $Al_2O_3$ as a top gate dielectric is changed from 1.95 V to -9.8 V when the voltage bias of top gate electrode is changed from -10 V to 10 V. The change of $V_{th}$ of OTFT with dual-gate structure has been successfully understood by an analysis of electrostatic potential.

• Journal of Information Display
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• 제7권3호
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• pp.27-30
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• 2006

This paper presents a comprehensive study on threshold voltage $(V_{th})$ control of organic thin-film transistors (OTFTs) with dual-gate structure. The fabrication of dual-gate pentacene OTFTs using plasma-enhanced atomic layer deposited (PEALD) 150 nm thick $Al_{2}O_{3}$ as a bottom gate dielectric and 300 nm thick parylene or PEALD 200 nm thick $Al_{2}O_{3}$ as both a top gate dielectric and a passivation layer was investigated. The $V_{th}$ of OTFT with 300 nm thick parylene as a top gate dielectric was changed from 4.7 V to 1.3 V and that with PEALD 200 nm thick $Al_{2}O_{3}$ as a top gate dielectric was changed from 1.95 V to -9.8 V when the voltage bias of top gate electrode was changed from -10 V to 10 V. The change of $V_{th}$ of OTFT with dual-gate structure was successfully investigated by an analysis of electrostatic potential.

• 천문학논총
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• 제30권2호
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• pp.183-187
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• 2015

We use ALLWISE data release W1- and W2-band epoch photometry collected by the Wide-Field Infrared Survey Explorer (WISE) to determine slopes of the period-luminosity relations for RR Lyrae stars in 15 globular clusters in the corresponding bands. We further combine these results with V- and K-band photometry of Galactic field RR Lyrae stars to determine the metallicity slopes of the log $P_F-[Fe/H]-M_K$, log $P_F-[Fe/H]-M_{W1}$, and log $P_F-[Fe/H]-M_{W2}$ period-metallicity-luminosity relations. We infer the zero points of these relations and determine the kinematical parameters of thick-disk and halo RR Lyraes via statistical parallax, and estimate the RR Lyrae-based distances to 18 Local-Group galaxies including the center of the Milky Way.

• 대한수학회지
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• 제48권1호
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• pp.105-115
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• 2011

Let f be a function which assigns a positive integer f(v) to each vertex v $\in$ V (G), let r, s and t be non-negative integers. An f-coloring of G is an edge-coloring of G such that each vertex v $\in$ V (G) has at most f(v) incident edges colored with the same color. The minimum number of colors needed to f-color G is called the f-chromatic index of G and denoted by ${\chi}'_f$(G). An [r, s, t; f]-coloring of a graph G is a mapping c from V(G) $\bigcup$ E(G) to the color set C = {0, 1, $\ldots$; k - 1} such that |c($v_i$) - c($v_j$ )| $\geq$ r for every two adjacent vertices $v_i$ and $v_j$, |c($e_i$ - c($e_j$)| $\geq$ s and ${\alpha}(v_i)$ $\leq$ f($v_i$) for all $v_i$ $\in$ V (G), ${\alpha}$ $\in$ C where ${\alpha}(v_i)$ denotes the number of ${\alpha}$-edges incident with the vertex $v_i$ and $e_i$, $e_j$ are edges which are incident with $v_i$ but colored with different colors, |c($e_i$)-c($v_j$)| $\geq$ t for all pairs of incident vertices and edges. The minimum k such that G has an [r, s, t; f]-coloring with k colors is defined as the [r, s, t; f]-chromatic number and denoted by ${\chi}_{r,s,t;f}$ (G). In this paper, we present some general bounds for [r, s, t; f]-coloring firstly. After that, we obtain some important properties under the restriction min{r, s, t} = 0 or min{r, s, t} = 1. Finally, we present some problems for further research.

• 한국전자파학회논문지
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• 제16권5호
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• pp.455-464
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• 2005

본 논문에서는 손실이 있는 전송선로의 전달 임피던스를 적용한 열전형 전압 변환기(TVC)의 모델을 제안하였으며, TVC의 교류-직류 변환 차이를 계산하기 위한 프로그램을 개발하였다. 제안된 TVC는 열전소자(TE)와 열전소자의 측정범위를 확대하기 위한 저항선이 동축형 실린더의 중심에 직선형태로 직렬로 연결되었다. 제안된 TVC의 교류-직류 변환 차이를 실린더의 직경, 열전도도 등의 특성을 적용하여 시뮬레이션 하였다. 시뮬레이션 값이 불확도 이내에서 측정값과 잘 일치하였다. 일치도는 주파수 $40Hz\~10kHz$에서는 $1{\mu}V/V$이하였고, $20kHz\~100kHz$에서는 $5{\mu}V/V$이하였으며, $200kHz\~1MHz$에서는 최대 $12{\mu}V/V$이하의 차이를 보였다.

• 한국초전도ㆍ저온공학회논문지
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• 제7권2호
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• pp.47-51
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• 2005

This paper is for studying the feasibility of SFCL application for the interconnection operation of 154kV power systems under 345kV S/S in Korean power system. All Korean 154kV power systems are constructed as loop systems in downtown. However, the present 154kV systems are operated with separated systems around 345kV S/S because of fault current and overload problems. In this study, we investigate the structure and operation of 154kV power system in Seoul and study the feasibility of interconnection operation of 154kV systems under 345kV systmes by applying SFCLs to 154kV bus-tie.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 B
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• pp.613-615
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• 1995

KEPCO is now going on upgrading the highest system voltage from 345kV to 765kV since 1992. The main reason of this 765kV project is the bulk power transmission from the power generation sites at the East and West coasts to the Kyeong-in area. The first 765kV transmission lines will be constructed by 1998 and operated as 345kV level until 2001. This system needs a detailed evaluation of the 2nd arc in case of 765kV transmission line outages and the countermeasures for the fast arc reduction for the successful high speed reclosing. So, this paper deals with the simulation results of the 2nd arc characteristics using EMTP and comparison of Sh.R and HSGS for the reduction methods.

• Bulletin of the Korean Chemical Society
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• 제24권3호
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• pp.311-317
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• 2003

Vanadium oxides supported on zirconia and modified with MoO₃were prepared by adding Zr(OH)₄powder into a mixed aqueous solution of ammonium metavanadate and ammonium molybdate followed by drying and calcining at high temperatures. The characterization of prepared catalysts was performed using FTIR, Raman spectroscopy and solid-state $^{51}V$ NMR. In the case of a calcination temperature of 773 K, for samples containing low loading of $V_2O_5$, below 15 wt %, vanadium oxide was in a highly dispersed state, while for samples containing high loading of $V_2O_5$, equal to or above 15 wt %, vanadium oxide was well crystallized because the $V_2O_5$ loading exceeded the formation of a monolayer on the surface of $ZrO_2$. The $ZrV_2O_7$ compound was formed through the reaction of $V_2O_5\;and\;ZrO_2$ at 873 K and the compound decomposed into $V_2O_5\;and\;ZrO_2$ at 1073 K, which were confirmed by FTIR spectroscopy and solid-state $^{51}V$ NMR. IR spectroscopic studies of ammonia adsorbed on $V_2O_5-MoO_3/ZrO_2$ showed the presence of both Lewis and Bronsted acids.