• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.10
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• pp.123-129
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• 1996

LDD structure is widely accepted in fabricating short channel MOSFETs due to reduced short channel effect originated form lower drain edge electric field. However, modeling of the LDD device is troublesome because the analysis methods of LDD region known are either too complicated or inaccurate. To solve the problem, this paper presents a nonlinear resistance model for the LDD region based on teh fact that the electron mobility changes with positive gate bias because accumulation layer of electrons is formed at the surface of the LDD region. To prove the usefulness of the model, single source/drain and LDD nMOSFETs were fabricated with 0.35$\mu$m CMOS technolgoy. For the fabricated devices we have measured I$_{ds}$-V$_{gs}$ characteristics and compare them to the modeling resutls. First of all, we calculated channel and LDD region mobility from I$_{ds}$-V$_{gs}$ characteristics of 1050$\AA$ sidewall, 5$\mu$m channel length LDD NMOSFET. Then we MOSFET and found good agreement with experiments. Next, we use calculated channel and LDD region mobility to model I$_{ds}$-V$_{gs}$ characteristics of LDD mMOSFET with 1400 and 1750$\AA$ sidewall and 5$\mu$m channel length and obtained good agreement with experiment. The single source/drain device characteristic modeling results indicates that the cahnnel mobility obtained form our model in LDD device is accurate. In the meantime, we found that the LDD region mobility is governed by phonon and surface roughness scattering from electric field dependence of the mobility. The proposed model is useful in device and circuit simulation because it can model LDD device successfully even though it is mathematically simple.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.12
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• pp.194-200
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• 2012

In this paper, we proposed a SPICE model of high-voltage insulated gate bipolar transistor(IGBT). The proposed model consists of two sub-devices, a MOSFET and a BJT. Basic I-V characteristics and their temperature dependency were realized by adjusting various parameters of the MOSFET and the BJT. To model nonlinear parasitic capacitances such as a reverse-transfer capacitance, multiple junction diodes, ideal voltage and current amplifiers, a voltage-controlled resistor, and passive devices were added in the model. The accuracy of the proposed model was verified by comparing the simulation results with the experimental results of a 1200V trench gate IGBT.

• Journal of radiological science and technology
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• v.45 no.1
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• pp.41-47
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• 2022

The purpose of this study is to apply a deep learning model that can distinguish lung perfusion and lung ventilation images in nuclear medicine, and to evaluate the image classification ability. Image data pre-processing was performed in the following order: image matrix size adjustment, min-max normalization, image center position adjustment, train/validation/test data set classification, and data augmentation. The convolutional neural network(CNN) structures of VGG-16, ResNet-18, Inception-ResNet-v2, and SE-ResNeXt-101 were used. For classification model evaluation, performance evaluation index of classification model, class activation map(CAM), and statistical image evaluation method were applied. As for the performance evaluation index of the classification model, SE-ResNeXt-101 and Inception-ResNet-v2 showed the highest performance with the same results. As a result of CAM, cardiac and right lung regions were highly activated in lung perfusion, and upper lung and neck regions were highly activated in lung ventilation. Statistical image evaluation showed a meaningful difference between SE-ResNeXt-101 and Inception-ResNet-v2. As a result of the study, the applicability of the CNN model for lung scintigraphy classification was confirmed. In the future, it is expected that it will be used as basic data for research on new artificial intelligence models and will help stable image management in clinical practice.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.3
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• pp.153-161
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• 2011

In this work, we report the physics-based SPICE model of amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) and demonstrate the SPICE simulation of amorphous InGaZnO (a-IGZO) TFT inverter by using Verilog-A. As key physical parameter, subgap density-of-states (DOS) is extracted and used for calculating the electric potential, carrier density, and mobility along the depth direction of active thin-film. It is confirmed that the proposed DOS-based SPICE model can successfully reproduce the voltage transfer characteristic of a-IGZO inverter as well as the measured I-V characteristics of a-IGZO TFTs within the average error of 6% at $V_{DD}$=20 V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.615-619
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• 2008

A molecular memory device which has a structure of Al/$Al_2O_3$/ASA-15 LB monolayer/Ti/Al device, was fabricated. To study a charge transfer mechanism of molecular memory devices, current density-voltage (J-V) characteristics were measured at an increasing temperature range from 10 K to 300 K with an interval of 30 K. Strong temperature-dependent electrical property and tunneling through organic monolayer at low bias (below 0.5 V) were appeared. These experimental data were fitted by using a theoretical formula such as the Simmons model. In comparison between the theoretical and the experimental results, it was verified that the fitting results using the Simmons model about direct tunneling was fairly fitted below 0.5 V at both 300 K and 10 K. Hopping conduction was also dominant at all voltage range above 200 K due to charges trapped by defects located within the dielectric stack, including the $Al_2O_3$, organic monolayer and Ti interfaces.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.9
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• pp.1648-1653
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• 2006

In this paper, transport characteristics have been investigated using analytical current-voltage model for double gate MOSFET(DGMOSFET). Scaling down to 100nm of gate length for MOSFET can bring about various problems such as a threshold voltage roll-off and increasing off current by tunneling since thickness of oxide is down by 1.fnm and doping concentration is increased. A current-voltage characteristics have been calculated according to changing of channel length,using analytical current-voltage relation. The analytical model has been verified by calculating I-V relation according to changing of oxide thickness and channel thickness as well as channel length. A current-voltage characteristics also have been compared and analyzed for operating temperature. When gate voltage is 2V, it is shown that a current-voltage characteristic in 77K is superior to in room temperature.

• Transactions of the Korean Society of Mechanical Engineers
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• v.14 no.2
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• pp.413-421
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• 1990

Acoustic emission signals due to leak from circular holes of 0.4, 1, 2 and 4mm diameter and rectangular slits of different geometry having the same cross section as 4mm diameter hole was studied both analytically and experimentally. Acoustic emission signals from a wide-band type transducer were transformed to digital signals through a digital oscilloscope, and $V_{rms}$ and frequency spectrum were obtained by processing digital signals. Relationships between acoustic parameters and fluid mechanical parameters were derived analytically. A quadrapole aerodynamic model was applied in the analysis of leak from the circular holes and $V_{rms}$ was found to be proportional to the root square of leak rate through the circular hole. A modified model based on dipole source mechanism and laminar equivalent diameter was applied in the analysis of leak signals from the rectangular slits. In the case of constant pressure, $V_{rms}$ increased as the laminar equivalent diameter of slit decreased. In the case of constant laminar equivalent diameter, however the result was similar to that for leak from the circular hole. The frequency spectra of leak signals shows the same frequency characteristics irrespective of the pressure difference.rence.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.4
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• pp.38-48
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• 1992

OEIC(Optoelectronic Integrated Circuit)'s can be integrated horizontally or vertically. Horizontal integration approach is, however, more immune to parasitic and more universally applicable. In this paper, a structural modeling, fabrication and characterization of PIN photodiodes which can be used in the horizontal integration are performed. For device modeling, we build a transmission line model from 2-D device simulation, from which lumped model parameters are extracted. The speed limits of the PIN photodiodes can also be calculated under various structural conditions from the model. Thus optimum design of horizontally integrated PIN photodiodes for high speed operation are possible. Such InGaAs/InP PIN photodiodes for long-wavelength communications are fabricated using pit etch, epi growth, planarization, diffusion and metallization processes. Planarization process using both RIE and wet etching and diffusion process using evaporated Zn$_{3}P_{2}$ film are developed. Characterization of the fabricated devices is performed through C-V and I-V measurements. At a reserve bias of 10V, the dark current is less than 5nA and capacitance is about 0.4pF. The calculated bandwidth using the measured series resistance and capacitance is about 4.23GHz.

• Atmosphere
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• v.22 no.4
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• pp.455-464
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• 2012

This study investigates a 12 month-lead predictability of PNU Coupled General Circulation Model (CGCM) V1.1 hindcast, for which an oceanic data assimilated initialization is used to generate ocean initial condition. The CGCM, a participant model of APEC Climate Center (APCC) long-lead multi-model ensemble system, has been initialized at each and every month and performed 12-month-lead hindcast for each month during 1980 to 2011. The 12-month-lead hindcast consisted of 2-5 ensembles and this study verified the ensemble averaged hindcast. As for the sea-surface temperature concerns, it remained high level of confidence especially over the tropical Pacific and the mid-latitude central Pacific with slight declining of temporal correlation coefficients (TCC) as lead month increased. The CGCM revealed trustworthy ENSO prediction skills in most of hindcasts, in particular. For atmospheric variables, like air temperature, precipitation, and geopotential height at 500hPa, reliable prediction results have been shown during entire lead time in most of domain, particularly over the equatorial region. Though the TCCs of hindcasted precipitation are lower than other variables, a skillful precipitation forecasts is also shown over highly variable regions such as ITCZ. This study also revealed that there are seasonal and regional dependencies on predictability for each variable and lead.

• Bulletin of the Society of Naval Architects of Korea
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• v.21 no.4
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• pp.10-20
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• 1984

When the hydrodynamic coefficients of the ship maneuvering equation are estimated by captive model test, it is difficult to take account of the scale effect between model and full scale ship. This scale effect problem can be overcome by processing the sea trial data with system identification. Extended Kalman filter is used as a system identification technique for the modification of the simulation equation as well as the estimation of hydrodynamic coefficients The phenomena of simultaneous drifting of linear coefficients occur. It is confirmed that two coefficients in each pair-$(Y_v',\;Y_r'-m'u'),\;(N_v',\;N_r')$-are simultaneously drifting and all 4 coefficients are drifting together. Particularly simultaneous drifting and 2 coefficients in each pair is more significant. It is also shown that the simultaneous drifting of 4 coefficients can be reduced by choosing the input data which have the random v'/r' curve and 4 coefficients are estimated within $2{\sim}4%$ error, which may be noise level. So, it is recommended to operate the rudder randomly in sea trial or model test for the application of system identification technique.