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Analysis of Transport Characteristics for Double Gate MOSFET using Analytical Current-Voltage Model  

Jung Hak-Kee (군산대학교 전자정보공학부)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.10, no.9, 2006 , pp. 1648-1653 More about this Journal
Abstract
In this paper, transport characteristics have been investigated using analytical current-voltage model for double gate MOSFET(DGMOSFET). Scaling down to 100nm of gate length for MOSFET can bring about various problems such as a threshold voltage roll-off and increasing off current by tunneling since thickness of oxide is down by 1.fnm and doping concentration is increased. A current-voltage characteristics have been calculated according to changing of channel length,using analytical current-voltage relation. The analytical model has been verified by calculating I-V relation according to changing of oxide thickness and channel thickness as well as channel length. A current-voltage characteristics also have been compared and analyzed for operating temperature. When gate voltage is 2V, it is shown that a current-voltage characteristic in 77K is superior to in room temperature.
Keywords
이중게이트 MOSFET;전류-전압특성;서브문턱영역;포화영역;선형영역;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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