JSTS:Journal of Semiconductor Technology and Science

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Physics-Based SPICE Model of a-InGaZnO Thin-Film Transistor Using Verilog-A

  • Jeon, Yong-Woo (School of Electrical Engineering, Kookmin University) ;
  • Hur, In-Seok (School of Electrical Engineering, Kookmin University) ;
  • Kim, Yong-Sik (School of Electrical Engineering, Kookmin University) ;
  • Bae, Min-Kyung (School of Electrical Engineering, Kookmin University) ;
  • Jung, Hyun-Kwang (School of Electrical Engineering, Kookmin University) ;
  • Kong, Dong-Sik (School of Electrical Engineering, Kookmin University) ;
  • Kim, Woo-Joon (School of Electrical Engineering, Kookmin University) ;
  • Kim, Jae-Hyeong (School of Electrical Engineering, Kookmin University) ;
  • Jang, Jae-Man (School of Electrical Engineering, Kookmin University) ;
  • Kim, Dong-Myong (School of Electrical Engineering, Kookmin University) ;
  • Kim, Dae-Hwan (School of Electrical Engineering, Kookmin University)
  • Received : 2011.04.29
  • Published : 2011.09.30
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Abstract

In this work, we report the physics-based SPICE model of amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) and demonstrate the SPICE simulation of amorphous InGaZnO (a-IGZO) TFT inverter by using Verilog-A. As key physical parameter, subgap density-of-states (DOS) is extracted and used for calculating the electric potential, carrier density, and mobility along the depth direction of active thin-film. It is confirmed that the proposed DOS-based SPICE model can successfully reproduce the voltage transfer characteristic of a-IGZO inverter as well as the measured I-V characteristics of a-IGZO TFTs within the average error of 6% at $V_{DD}$=20 V.

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References

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Cited by

  1. Investigating electron depletion effect in amorphous indium–gallium–zinc-oxide thin-film transistor with a floating capping metal by technology computer-aided design simulation and leakage reduction vol.53, pp.6, 2014, https://doi.org/10.7567/JJAP.53.064302
  2. Temperature-Dependent Electrical Characterization of Amorphous Indium Zinc Oxide Thin-Film Transistors vol.64, pp.8, 2017, https://doi.org/10.1109/TED.2017.2717935